• 한국결정성장학회지
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• 제17권6호
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• pp.238-244
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• 2007

수열합성법으로 합성 제조한 TMA-A 제올라이트 내부에 이온교환법을 이용하여 나노사이즈의 ZnO 결정을 성공적으로 담지하였다. TMA-A 제올라이트의 최적 합성 조성비로는 $Al(i-pro)_3$:2.2 TEOS:2.4 TMAOH:0.3 NaOH:200 $H_2O$으로 된 용액이었다. ZnO를 담지시킨 TMA-A 제올라이트의 합성을 위하여 0.3g의 TMA-A 제올라이트와 5mol의 $ZnCl_2$ solution을 사용하였다. 각각의 시료를 혼합, 교반, 원심분리, 건조의 과정을 거쳐서 준비한 ZnO를 담지시킨 TMA-A 제올라이트 precursor를 $400{\sim}600^{\circ}C$에서 3시간 동안 열처리하였다. TMA-A 제올라이트의 결정화 과정을 X-ray diffraction (XRD)을 이용하여 분석하였으며, Brunaur-Emett-Teller(BET) 비표면적을 측정하였다. 또한, 온도와 시간에 따른 입자의 형상이나 크기를 scanning electron microscopy(SEM), transmission electron microscopy(TEM) 및 입도분석을 통하여 관찰하였다.

• 전기학회논문지
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• 제63권1호
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• pp.76-79
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• 2014

We report Zinc oxide (ZnO) nanorods synthesis and electrochemical luminescence (ECL) cell fabrication. The ECL cell was fabricated using the electrode of ZnO nanorods and Ru(II) complex ($Ru(bpy)_3{^{2+}}$) as a luminescence materials. The fabricated ECL cell is composed of F-doped $SnO_2$ (FTO) glass/ Ru(II)/ZnO nanorods/FTO glass. The highest intensity of the emitting light was obtained at the wavelength of ~620 nm which corresponds to dark-orange color. At a bias voltage of 3V, the measured ECL efficiencies were 5 $cd/m^2$ for cell without ZnO nanorod, 145 $cd/m^2$ for ZnO nanorods-$5{\mu}m$, 208 $cd/m^2$ for ZnO nanorods-$8{\mu}m$ and 275 $cd/m^2$ for ZnO nanorods-$10{\mu}m$, respectively. At a bias voltage of 3.5V, the use of ZnO nanorods increases ECL intensities by about 3 times compared to the typical ECL cell without the use of ZnO nanorods.

• 한국세라믹학회지
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• 제48권3호
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• pp.251-256
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• 2011

The luminescence properties of polycrystalline ZnO annealed in reducing ambience ($H_2/N_2$) have been studied. An effective quenching of green luminescence with enhanced UV emission from polycrystalline ZnO is observed for the reduced ZnO. The variations of the UV and green luminescence band upon reduction treatment are investigated as a function of temperature in the range between 20 and 300 K. Upon annealing treatment in reducing ambience, the optical quality of polycrystalline ZnO is improved. The UV to green intensity ratio of sintered ZnO approaches close to zero (~0.05). However, this ratio reaches more than 13 at room temperature for polycrystalline ZnO annealed at $800^{\circ}C$ in reducing ambience. Furthermore, the full width at half maximum (FWHM) of the UV band of polycrystalline ZnO is reduced compared to unannealed polycrystalline ZnO. Electron paramagnetic resonance (EPR) measurements clearly show that there is no direct correlation between the green luminescence and oxygen vacancy concentration for reduced polycrystalline ZnO.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.178-178
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• 2008

ZnO 바리스터는 인가되는 전압에 따라 저항이 변하는 전압 의존형 저항체이며 각종 전기 전자 정보통신용 제품에 정전기(ESD) 대책용 소자로 폭 넓게 사용되는 전자 세라믹스 부품이다. 특별히 Bi-based ZnO 바리스터는 다양한 상(phase)으로 구성되어 있으며 그 입계의 전기적 특성은 소량 첨가되는 dopant의 종류에 따라 다양하게 변하는 것으로 알려져 있다. 본 연구에서는 Bi-based ZnO 바리스터 (ZnO-$Bi_2O_3$, ZnO-$Bi_2O_3-Mn_3O_4$)에서 각종 유전함수$(Z^*,M^*,\varepsilon^*,Y^*,tan{\delta})$를 이용하여 입계의 주파수-온도에 대한 특성을 살펴 보았다. 일반적인 ZnO 바리스터 제조법으로 시편을 제작하여 78K~800K 온도 범위에서 각종 유전함수를 이용하여 복소 평면도(complex plane plot)와 주파수 응답도(frequency explicit plot)의 방법으로 defect level과 입계 특성(활성화 에너지, 정전용량, 저항, 입계 안정성 등)에 대하여 고찰하였다. ZnO-$Bi_2O_3$(ZB)계와 ZnO-$Bi_2O_3-Mn_3O_4$(ZBM)계 모두 상온 이하의 온도에서 $Zn_i$와 $V_o$의 결함이 나타났으며, 이들의 결함 준위는 각 유전함수에 따라 다소 차이가 났다. 입계 특성으로 ZB계는 이상구간(560~660K)을 전후로 1.15 eV $\rightarrow$ 1.49 eV의 활성화 에너지의 변화가 나타났지만, ZBM계는 이러한 현상이 나타나지 않았다. 또한 입계 전위 장벽의 온도 안정성에 대해서는 Cole-Cole model을 적용하여 분포 파라미터 (distribution parameter; $\alpha$)를 구하여 고찰하였다. ZB계의 입계 안정성은 온도에 따라 불안정해 졌지만, ZBM계는 안정하였다.

• 한국진공학회지
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• 제9권4호
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• pp.367-372
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• 2000

$SiO_2$/Si 기판과 비정질 slide glass 기판 위에 대향타겟식스퍼터법(FTS법)을 이용하여 sputtering current 0.1~0.8 A, 방전 가스압 0.5~3mTorr, 기판온도 R.T~$400^{\circ}C$에서 ZnO 박막을 증착하였다. sputtering current 0.4 A, 가스압력 0.5 mTorr, 기판온도 30$0^{\circ}C$에서 증착된 ZnO/glass 박막과 ZnO/$SiO_2$/Si 박막의 $\Delta\theta_{50}$은 $3.8^{\circ}$와 $2.98^{\circ}$를 각각 나타내었다. 이러한 조건에서 FTS법은 비정질 slide glass 기판 위에서도 우수한 c-축 배향성을 갖는 ZnO 박막을 제작할 수 있다는 것을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.572-577
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• 1996

Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

• 한국세라믹학회지
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• 제32권12호
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• pp.1323-1330
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• 1995

The effects of various additives on the microstructures of sintered ZnO varistors were examined. Bi2O3, Sb2O3 and Cr2O3 were added to ZnO step by step to identify the effect of each component. The specimens were prepared by sintering at 110$0^{\circ}C$ and 120$0^{\circ}C$ in ambient atmosphere. In ZnO-Bi2O3-Sb2O3 ternary system, decrease of averge grain size due to antimony oxide addition depends on sintering temperature as well as Bi2O3 content. When Sb2O3 was partly or completely replaced by Cr2O3, grain size was further reduced. A significant amount of pyrochlore phase which was not transformed to spinel and Bi2O3-rich liquid phase seemed to remain during sintering at 110$0^{\circ}C$. Unlike ZnO-Bi2O3-Sb2O3 system, the $\alpha$-spinel phase containing significant amount of Cr did not transform to pyrochlore during furnace cooling. Fine spinel particles around 1${\mu}{\textrm}{m}$ size were ovserved within ZnO grains and grain boundaries, which were believed to be responsible for grain-growth inhibition in ZnO-Bi2O3-Sb2O3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.70-73
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• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.565-568
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• 1987

In order to determine the standard composition of ZnO varistor with higher nonlinearity, various contents of $MnO_2$, $Co_2O_3$ were added to ZnO-1.0m/o $Bi_2O_3$ system. Also, samples that contained small amount of Sb, Si-oxides in standard composition determined before were fabricated. As a result, the standard composition of higher nonlinearity-oriented ZnO varistor was shown as ZnO-1.0 m/o $Bi_2O_3$-1.0m/o $MnO_2$-1.0m/o $Co_2O_3$ and $Sb_2O_3$ largely enhanced nonlinear exponent and nonlinear resistance, hut SiO largely enhanced nonlinear exponent only.