• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.312-316
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• 1999

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.499-504
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• 1998

ZnO varistors having a composition of 98.0 mol% ZnO 1.0 mol% $Bi_2O_3$ 0.5 mol% $MnO_2$ were prepared by the Pechini process and the sintering behavior and electrical characteristics were studied. ZnO varis-색 powder with $1.5\mu\textrm{m}$ mean diameter and narow particle size distribution was obtained using the Pechni pro-cess. Typical intermediate stage grain growth of liquid phase sintering was observed by sintering at $1100^{\circ}C$ At this temperature ZnO varistors having uniform grain size and Bi-rich liquid phase distributed uniformly along grain boundaries were prepared. The nonlinear coefficients of the ZnO varistors were in the range of 40-60 The breakdown voltages of the varistors were nearly inversely propeortional to the grain size which reflects that ZnO varistors prepared by the Pechini process have uniform distribution of Bi-rich liquid phase along grain boundaries It is believed that the microstructures of ZnO varistors can be controlled effectively by using the Pechini process which makes the control of the electrical properties of ZnO varistors possible.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.88-88
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• 2011

ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.47-50
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• 1986

Photodesorption of adsorbed $O_2^-$ on ZnO was investigated in ZnO-$O_2(N_2)$-rubrene-bromobenzene mixture. When the mixture was illuminated with the light having the energy greater than the band gap energy of ZnO (3.2eV), the amount of reacted rubrene increased as the amount of ZnO increased in the experimental condition. For the energy of light less than 3.2eV, however, the reacted amount of rubrene decreased as the amount of ZnO increased. There is a difference in the reacted amount of rubrene between ZnO-$O_2$-rubrene-bromobenzene and ZnO-$N_2$-rubrene-bromobenzene mixtures. From the results, it was suggested that the adsorbed $O_2^-$ on ZnO transform to singlet oxygen in the photodesorption process and the singlet oxygen reacted with rubrene.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.201-207
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• 1998

We have investigated about interface characteristics between ZnO thin films and metal electrodes when ZnO and metal electrodes were fabricated as piezoelectric vibrators. At this, ZnO thin films were deposited by rf reactive magnetron sputtering method. After fabricating piezoelectric vibrator of Cr/ZnO/Cr structure with optimum condition, we analyse interface characteristics between ZnO thin films and metal electrodes by I-V measurement. AES depth profile, SEM and C-V measurement. From these measurements we found that ZnO piezoelectric vibrators showed good property when they fabricated as Cr/$SiO_2$/ZnO/Cr structure. And we could confirm these things by driving, and measuring vibration displacement of piezoelectric vibrator with $SiO_2$diffusion barrier.

• Journal of environmental and Sanitary engineering
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• v.10 no.3
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• pp.105-114
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• 1995

There has been increasing awareness on the importance of not only removal of organic materials but also sterilization of microbial cell in the drinking water purification research, so there has been many researches on that area. This study has been designed to analyze the effects of $TiO_{2}$ and ZnO coated on activated carbon on Escherichia coli. In this study, the sterilization power was analyzed by (1) variation of $TiO_{2}$ and ZnO concentration coated on activated carbon (2) variation of UV intensity. In addition, the kinetics between exposure time and sterilization velocity was viewed by the method of Chick. The results are as follows. 1. Survival ratio of E. coli decreased as time goes on in application of $TiO_{2}$, ZnO and $TiO_{2}{\cdot}ZnO$. In $TiO_{2}$ and ZnO, the effect increased upto certain concentration, but decreased there-after. In $TiO_{2}{\cdot}ZnO$, the effect of sterilization was in similar way among 3 combinations. 2. Survival ratio of E. coli decreased proportionately to an increase of light intensity in ZnO and $TiO_{2}{\cdit}ZnO$. In $TiO_{2}$, the survival ratio differed over extent of irradiation but the difference over the light intensity was not significant. 3. When Chick's law of sterilization was applied, m values of three concentrations of $TiO_{2}$ were 1.57,0.98, 1.96 respectively. M values of three concentration of ZnO were 1.10, 1.18,0. 11 respectively and those of three combination of $TiO_{2}{\cdot}ZnO$ were 1.17, 1.24, 1.74 respectively.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.140-144
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• 2018

$ZnO/TiO_2$ nanocomposites were synthesized via a modified sol-gel technique by incorporating 30 and 70 wt% $TiO_2$ nanopowder into a ZnO sol-gel matrix. Zinc acetate dihydrate was used as the ZnO precursor and de-ionized water as the solvent, while titanium oxysulfate was employed for the synthesis of $TiO_2$ nanopowder. The synthesized $ZnO/TiO_2$ nanocomposites were characterized by x-ray diffraction, UV-vis spectroscopy, scanning electron microscopy, and transmission electron microscopy. The $ZnO/TiO_2$ nanocomposites showed both the ZnO (wurtzite) and $TiO_2$ (anatase) phases. The average ZnO crystallite size of the $ZnO/TiO_2$ nanocomposites was found to be about 26.3 nm. The TEM results confirmed that spherical $TiO_2$ particles were embedded in the ZnO matrix. $TiO_2$ particles attached onto the rod-like ZnO particles were also observed. The $ZnO/TiO_2$ nanocomposites exhibited optical absorption properties superior to those of pure ZnO and $TiO_2$.