• Korean Journal of Materials Research
• /
• v.30 no.8
• /
• pp.399-405
• /
• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• Journal of the Korean Ceramic Society
• /
• v.42 no.4
• /
• pp.276-281
• /
• 2005

$LiNi_{1-y}M_{y}O_{2}(M=Zn^{2+},\;Al^{3+},\;and\;Ti^{4+},\;0.000\{\le}y{\le}0.100)$ were synthesized by the combustion method by calcining in $O_{2}$ stream at $750^{\circ}C$ for 36 h. XRD analyses, observation by FE-SEM and measurement of the variation of discharge capacity with the number of cycles were carried out. The composition $LiNi_{0.99}M_{0.01}O_{2}(M=Zn^{2+},\;Al^{3+},\;and\;Ti^{4+})$ of all the compositions showed relatively good electrochemical properties. $LiNi_{0.99}M_{0.01}O_{2}$ exhibited poor crystallinity and $LiNi_{0.99}M_{0.01}O_{2}$ showed the cation mixing of large fraction. $LiNi_{0.99}M_{0.01}O_{2}$ with improved cycling performance showed good crystallinity and the cation mixing of small fraction.

• Journal of the Korean Ceramic Society
• /
• v.26 no.2
• /
• pp.187-194
• /
• 1989

Synthesis of spinel pigment on ZnO-Fe2O3 system. The object of this research is the synthesis of new spinel pigments on the basic of ZnO-Fe2O3 system which was substituted by ZnO-Fe2O3 by MgO-Al2O3. This research was progressed by measuring the X-ray diffraction and the reflectances of the substitued ZnO-Fe2O3 group. Which was obtained by sintering at the temperature of 1,00$0^{\circ}C$, 1,10$0^{\circ}C$, 1,20$0^{\circ}C$ and 1,25$0^{\circ}C$ and them by regrinding. In order to coloring test, here basic compositions of Barium glaze, Zinc glaze, Lime glaze, Lead glaze and Talc glaze used in this experiment are obtained from the ceramic work. Adding synthetic stains in these basic glazes with 3%, mixing and glazing on the specimen. The specimens was fired at 1,28$0^{\circ}C$ in reducing and oxidizing atmosphere in the gas kiln. The results of the research as follow. 1. Many kinds of spinel pigment was produced on ZnO-Fe2O3 system that is to say, not always only spinel. 2. Spinel peak was observed strongly on the ZnO-Fe2O3 system withsubstituting by MgO-Fe2O3 and MgO-Al2O3 group(the ratio of MgO, Al2O3 being increased, observed more strongly). 3. The most effective temperature ranges was 1,20$0^{\circ}C$~1,25$0^{\circ}C$. 4. The color of spinel pigments on this system was observed by "stable YR". 5. It was yellow red in oxidizing and green in reducing atmosphere on the coloring test.ring test.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.1
• /
• pp.1022-1025
• /
• 2005

The effect of substrate surface to the formation of ZnO nanostructures has been investigated using Si (111), $Al_2O_3$(C-plane) $Al_2O_3$(A-plane), and $Al_2O_3$(R-plane) substrates. The growth temperature was controlled from 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$, and the luminescence properties were investigated by a series of photoluminescence (PL) measurements at the elevating temperatures. ZnO nanostructures grown on Si substrate show strong UV emission intensity along with green emission positioned at 3.22 eV and 2.5 eV, respectively. However, green emission was not observed from the ZnO nanostructures grown on $Al_2O_3$ substrates. It is explained in terms of the difference of the surface energy between Si and $Al_2O_3$. Also, the origin of UV emissions has been discussed by using the temperature-dependent PL. The distinction of the PL spectra is interpreted in terms of the difference of the impurity included in the nanostructures.

• Current Photovoltaic Research
• /
• v.5 no.4
• /
• pp.135-139
• /
• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.04a
• /
• pp.141.1-141
• /
• 2003

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2004.10a
• /
• pp.233-244
• /
• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.58-65
• /
• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.8 no.5
• /
• pp.1057-1061
• /
• 2007

In this study, we investigated the properties of ZnO thin films prepared by layer-by-layer method in RF magnetron sputtering system using AlAs and ZnO targets. Effects of $H_2O_2$ dip prior to thermal treatment were studied as well. Either n-type or p-type films were observed in our study depending on the annealing conditions. It thus indicates the feasibility of arbitrarily modifying the conductivity type. At the same time, it also implies the thermal instabilities of the film properties. Property measurements after stressing the films up to 144 hours showed that thermal variations of properties nay be suppressed by pre-treatment in 30% $H_2O_2$ for 1 min.

• Clean Technology
• /
• v.18 no.1
• /
• pp.83-88
• /
• 2012

In order to improve the stability of ${\gamma}-Al_2O_3$ on hydrolysis of $SF_6$, the catalytic promoters were investigated in this study. The crystal phase of ${\gamma}-Al_2O_3$ is transformed to their ${\alpha}$-phase during hydrolysis of $SF_6$. Various metal oxides were applied as the promoter material that is Ga, Mg, and Zn and the promoter of 1, 5, and 10 wt% was impregnated over ${\gamma}-Al_2O_3$ by the impregnation method. Specially, it were confirmed in the catalytic activity tests and XRD analysis that ZnO/${\gamma}-Al_2O_3$ catalyst had the high activity for decomposition of $SF_6$ by catalytic hydrolysis and the crystal phase of ZnO promoted ${\gamma}-Al_2O_3$ was not transformed. From these results, it could be known that the stability of ${\gamma}-Al_2O_3$ is enhanced with the catalytic promotion of ZnO impregnated over the surface of catalyst.