• 한국세라믹학회지
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• 제32권1호
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• 한국진공학회지
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• 제19권5호
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• pp.385-390
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• 2010

원자층 증착법(Atomic Layer Deposition, ALD)을 이용하여 ZnO 나노막대에 ZnO:Al과 $Al_2O_3$를 코팅하여 coaxial 형태의 나노선 구조를 제작하여 광학적 특성을 분석하였다. 반도체인 ZnO:Al을 코팅하는 경우 Al이 ZnO층에 확산되어 ZnO에 도핑이 되는 효과를, $Al_2O_3$를 코팅하는 경우 반도체-절연체 계면 상태가 존재함을 광전이 특성을 이용하여 확인하였다.

• 한국진공학회지
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• 제18권5호
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• pp.384-389
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• 2009

ZnO는 육방정계결정구조의 물질로서 3.37 eV의 넓은 띠 간격과 60 meV의 큰 exciton 결합에너지에 따른 높은 효율의 자외선발광으로 짧은 파장의 빛 (녹, 청, 자외선)을 내는 LED (Light Emitting Diode) 분야에서 관심을 기울이고 있는 물질이다. LED제작을 위해서는 n형의 ZnO와 p형의 ZnO가 필요하지만 기본적으로 ZnO은 n형이므로 신뢰성 있는 p형 ZnO박막을 제작하기 위한 노력이 기울여지고 있다. 본 연구에서는 ALD (Atomic Layer Deposition)로 제작된 ZnO박막에 20 keV의 에너지를 갖는 질소이온을 $10^{13}{\sim}10^{15}ions/cm^2$로 조사한 후 Hall 효과 측정장치를 이용하여 질소이온 조사에 따른 전기적 특성변화를 조사하였다.

• 한국세라믹학회지
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• 제36권10호
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국결정성장학회지
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• 제1권2호
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• pp.94-103
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• 1991

ZnO함량이 45~60mol%인 ZnO-$P_2O_5$계 유리를 $1200^{\circ}C$에서 용융한 후 열처리하여 결정화시켰다. 기초유리와 결정화시킨 시료의 기계적 성질, 전기적 성질 등을 X선 회절, FTIR, 밀도, 열팽창, 전기전도도, 미세경도 등을 측정하여 검토하였다. X선 회절분석 결과 ZnO의 함량이 45~55mol%인 결정화 유리에서는 주결정상이 메타인산아연[$Zn(PO_3)_2$]이었으며ZnO가 60mol%인 시료는 피로인산아연($Zn_2P_2O_7$)으로 나타났다. 열팽창계수와 직류전기전도도는 ZnO가 50~60mol%인 시료에서 결정상 방향에 따라 각기 다른 값을 나타났으며 이는 배향성 결정상이 존재함을 시사한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.224-227
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• 2001

ZnO buffer layers were used to grow ZnO films on c-plane sapphire substrates. The role of ZnO buffer layers in the growth of ZnO thin films on sapphire substrates was investigated by scanning electron microscopy, X-ray diffraction, and Photolumminescence(PL) measurements. At the optimized ZnO buffer layer thickness of 100 $\AA$, FWHM of $\theta$ -rocking curve of ZnO thin films was minimized to 0.73 degrees and room temperature PL spectra showed that deep level emission was not hardly seen. The optimization of the ZnO buffer layer thickness resulted in improvements of the surface morphology and crystalline quality of ZnO thin films.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.376-386
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• 2014

Zinc oxysulfide nanocrystals (ZnOS NCs) were synthesized by forming ZnS phase on a ZnO matrix. ZnO nanocrystals (NCs) with a diameter of 10 nm were synthesized by forced hydrolysis in an organic solvent. As-synthesized ZnO NCs aggregated with each other due to the high surface energy. As acetic acid (AA) was added into the milky suspension of the aggregated ZnO NCs, transparent solution of well dispersed ZnO NCs formed. Finally ZnOS NCs were formed by adding thioacetic acid (TAA) to the transparent solution. The effect of recrystallization on the structural, optical and electrical properties of the ZnOS NCs were studied. The results of UV-vis absorption confirmed the band gap tunability caused by increasing the curing temperature of ZnOS thin films. This may have originated from the larger effective size due to the recrystallization of zinc sulfide (ZnS). From XRD result we identified that ZnOS thin films have a zinc blende crystal structure of ZnS without wurtzite ZnO structure. This is probably due to the small amount of ZnO phases. These assertions were verified through EDS of FE-SEM, XPS and EDS mapping of HR-TEM results; we clearly proved that ZnOS were comprised of ZnS and ZnO phases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• 한국자기학회지
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• 제25권5호
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• pp.156-161
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• 2015

이 연구에서는 X-선 광전자분광법(X-ray photoemission spectroscopy: XPS)을 이용하여 염료감응 태양전지의 전극용 후보 물질에 속하는 $ZnSnO_3$와 $Zn_2SnO_4$의 전자 구조를 연구하였다. 제조된 시료들에 대한 X-선 회절 측정에 의하면 $ZnSnO_3$와 $Zn_2SnO_4$ 시료는 각각 단일상의 ilmenite(IL) 구조와 역스피넬(inverse spinel) 구조를 가지고 있음을 알 수 있었다. Zn 2p와 Sn 3d 내각준위 XPS 측정으로부터 $ZnSnO_3$와 $Zn_2SnO_4$ 두 시료 모두에서 Zn 이온은 2가 (Zn 2+) 상태이며, Sn 이온은 4가 (Sn 4+) 상태임을 알 수 있었다. 한편 얕은 내각준위 XPS 스펙트럼의 측정에서는 $ZnSnO_3$의 Sn 4d와 Zn 3d 내각 준위들의 결합에너지가 $Zn_2SnO_4$에서 보다 다소 작게 관찰되었다. 이 연구로부터 $ZnSnO_3$와 $Zn_2SnO_4$에서의 각 이온의 원자가 상태와 화학적 결합 상태에 대한 정보를 얻을 수 있었다.