• 대한전자공학회논문지
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• 제18권1호
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• pp.35-40
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• 1981

분무법(spray method), 화학증착법(chemical vapor deposition method) 및 진공도착법 등을 사용하여 SRO2, SROr-ZnO 및 ZnO 박막가스 검지소자를 제조하였다. 제된된 소자들은 CO 및 SO2 등 유독가스를 포함한 여러 가지 가스에 대해 민감한 반응을 나타내었다. 박막가스 검지소자가 각종 가스와 접촉할 때 생기는 전기시도도의 변화는 이들 가스의 표면흡착에 의한 캐리어밀도의 변화에 기인하는 것으로 사료된다. 아울러 제조된 청막소자의 전기부도도는 소자 주위에 유지되는 기력에 따라 크게 달라짐을 알 수 있었다.

• 한국세라믹학회지
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• 제48권4호
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• pp.328-333
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• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.198-200
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• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• 한국세라믹학회지
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• 제50권4호
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• pp.288-293
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• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.43.1-43.1
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.849-852
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• 2007

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.

• 한국재료학회지
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• 제31권3호
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

• 한국재료학회지
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• 제5권5호
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• pp.568-574
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• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

• 한국진공학회지
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• 제19권4호
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• pp.275-280
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• 2010

MOCVD (Metal-Organic Chemical Vapor Deposition) 장비를 사용하여 BZO (boron doped zinc oxide, ZnO:B) 박막을 증착하고 수소 플라즈마 처리공정을 진행하였다. 본 연구는 수소 플라즈마 처리된 BZO 박막에 산소 플라즈마 재처리를 진행하여 BZO 박막의 특성 변화를 분석하였다. 그 결과 BZO 박막 성장은 (100), (101), (110)을 확인하였고, 산소 플라즈마 재처리에 의하여 일함수와 표면 저항이 증가하였다. 수소 플라즈마 처리만을 진행한 BZO 박막과 산소 플라즈마 재처리 공정을 진행한 BZO 박막의 300~1,100 nm에서 가중치 투과율은 86%로 변화하지 않았으며, 가중치 산란도는 12%에서 15%로 증가하였다.