• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.73-76
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• 2009

ZnBo이 첨가된 (Ba,Sr)$TiO_3$ 후막을 이용한 planner capacitor의 전기적 특성을 조사하였다. 후막은 알루미나 기판에 스크린 프린팅기법에 의해서 제작되었고 $1200^{\circ}C$의 온도에서 소결하였다. 출발 물질인 BST의 저온 소결을 위해서 ZnBO를 첨가하였다. ZnBO가 1, 3, 5 wt% 첨가된 경우 소결온도가 $1200^{\circ}C$의 낮은 온도에서 소결되는 것을 확인했으며 ZnBO의 첨가랑이 증가함에 따라서 유전율은 감소하고 유전손실는 증가 하는 현상이 나타났다. 1, 3, 5 wt%의 ZnBO가 첨가된 (Ba,Sr)$TiO_3$는 각각 756, 624, 554의 유전율를 보였다. 또한 ZnBO의 양이 증가함에 따라서 누설전류가 감소되는 것을 확인하였고, ZnBO의 첨가가 grain의 성장과 density가 증가되어 누설전류의 양이 감소하게 되는 것으로 분석되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• Journal of the Korean Chemical Society
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• v.45 no.3
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• pp.251-255
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• 2001

The structure of the lithium zinc borate LiZnBO3 has been established by single-crystal X-ray diffraction methods. It crystallizes in the triclinic space group P1(Z=2), with unit-cell parameters - $a=5.0915(9)\AA$, $b=5.059(1)\AA$, $c=6.156(1)\AA$, $V=120.6(1)\AA3$ , $\alpha=65.81(1)^{\circ}$, $\beta=65.56(1)^{\circ}$ and $\gamma=59.77(1)^{\circ}$. The structure was determined from 704 unique reflections and refined to the final residuals R=0.039 and wR=0.056. It is characterized by an association of BO3 triangles and LiO4 and ZnO4 tetrahedra. The Li and Zn atoms are disordered around the average positions between Li1 and Li2 atoms or between Zn1 and Zn2 atoms. The disorder can be described by four half-occupied positions about Li1, Li2, Zn1 and Zn2 atoms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• 한국전자현미경학회:학술대회논문집
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• 2005.11a
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• pp.106-111
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.95.2-95
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.167-167
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.83-83
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.175.1-175
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• 2003

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.1012-1017
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• 1997

Mg-Zn-Ca합금의 잉곳트는 BN을 내벽에 바른 4x$10^{-5}$Torr의 진공의 석영관내에서 제조하였다. Mg-Zn합금계의 입자미세화를 위하여 0.5-5wt.%조성범위의 Ca를 첨가하였다. 제조된 합금을 용체화처리한 후 결정립크기와 경도를 측정하였다. Mg-6wt.%Zn합금의 입자미세화효과는 Ca가 1.5wt%첨가 될 때 최적의 조건이었다. Mg-6wt.% Zn과 Mg-6wt.% Zn-2wt.% Ca및 Mg-6wt.% Zn-1.5wt.% Si합금을 시효처리하여 시효거동을 조사하였다. 입자미세화에 의한 경도증가효과는 Mg-Zn-Ca합금계에서 크게 나타났으며 시효에 의한 경도증가효과는 Mg-Zn-Si합금계에서 크게 나타났다. Mg-6wt.%Zn합금의 부식전류밀도는 0.5wt.% Ca의 조성에서 감소되었다.