• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.46.2-46.2
• /
• 2010

최근 수송기기 및 전자부품산업에서의 성능향상 요구에 따라 경량고강도 비철금속재료의 수요가 증대되고 있다. 특히, 세계적으로 에너지 절약 및 환경 공해 규제가 대폭 강화됨에 따라 자동차, 항공기 등 수송기기의 소재경량화 소재로 낮은 밀도 기계적 가공성이 우수한 마그네슘 합금이 각광을 받고 있다. 그러나 Mg합금은 알루미늄 합금과는 달리 보호성 산화피막이 형성되지 않아 내식성 및 고온강도가 매우 취약하다. 이를 보안하기 위해서 본 연구에서는 마그네슘의 강도 개선을 위한 원소로써 고용강화 원소로 많이 쓰이는 Zn과 입자 미세화로 인한 항복강도를 증가시키는 Mn의 3원계 합금에 고온에서 안정한 Mg2Sn상이 형성되는 Sn을 첨가하여 시효처리에 따른 기계적 특성과 미세조직을 관찰하였다. 실험 이전에 Pandat Program에 의한 열역학적 분석을 바탕으로 Mg-Zn-Mn 및 Mg-Zn-Mn-Sn의 상태도 계산 및 MgZn와 Mg2Sn 석출분율을 예측하였다. 열역학 계산을 통해 도출된 석출온도를 통해 Mg-Zn-Mn 및 Mg-Zn-Mn-Sn 합금의 열처리에 따른 경도 및 미세구조를 관찰하였다. 또한, 기계적 특성을 평가하기 위해 상온 및 고온 인장시험을 실시하였고 XRD, SEM을 이용하여 석출상을 분석하였다.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.6
• /
• pp.305-309
• /
• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• Proceedings of the KWS Conference
• /
• 2005.11a
• /
• pp.225-227
• /
• 2005

Sn-8wt%Zn-3wt%Bi (이하, Sn-8Zn-3Bi) 솔더의 장기 신뢰성을 평가하기 위하여 열 충격 시험을 행하였다. 열 충격 시험은 $-40^{\circ}C$에서 $80^{\circ}C$범위에서 1000 사이클 동안 하였다. 접합 기판으로는 각각 OSP(Organic Solderability Preservative), Sn 그리고 Ni/Au 처리를 한 PCB(Printed Circuit Board) 패드를 사용하였다. 접합에 사용한 부품은 1608 Chip(Multi Layer Chip Capacitor, Chip Resistor) 으로 전극 부위에 Sn-37wt%Pb, Sn 도금하여 사용하였다. 솔더링 후 1608 Chip의 전단 강도와 솔더링부에서 미세조직 및 IMC(Inter Metallic Compound) 변화를 관찰하였다. 측정결과, Sn-8Zn-3Bi 솔더의 초기 전단 강도는 기판의 표면처리에 상관없이 약 40N 이상이었다. 그리고 열충격 시험 1000 사이클 후에는 모든 기판에서 2N 정도 약간의 강도 저하를 보였다.

• Journal of the Korean Society for Heat Treatment
• /
• v.32 no.2
• /
• pp.74-78
• /
• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.

• Journal of the Korean Society for Heat Treatment
• /
• v.22 no.2
• /
• pp.75-79
• /
• 2009

Precipitate formations and grain size variations in various Mg-Sn-Zn alloys have been investigated and their effects on the tensile properties and sheet metal formability were evaluated. MgSn and MgZn precipitates were observed in the alloy sheets, however any clear difference in morphology or size for the precipitates could not be found even though MgSn precipitates tend to be larger than MgZn. The highest formability in terms of conical cup value was found in the Mg-4 wt%Sn-2 wt%Zn where the high tensile elongation and the reduced grain coarsening at elevated temperatures were observed.

• Proceedings of the KIEE Conference
• /
• 1991.07a
• /
• pp.209-212
• /
• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

• Journal of the Korean Ceramic Society
• /
• v.50 no.4
• /
• pp.288-293
• /
• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

• Journal of Powder Materials
• /
• v.28 no.3
• /
• pp.239-245
• /
• 2021

The SnSe single crystal shows an outstanding figure of merit (ZT) of 2.6 at 973 K; thus, it is considered to be a promising thermoelectric material. However, the mass production of SnSe single crystals is difficult, and their mechanical properties are poor. Alternatively, we can use polycrystalline SnSe powder, which has better mechanical properties. In this study, surface modification by atomic layer deposition (ALD) is chosen to increase the ZT value of SnSe polycrystalline powder. SnSe powder is ground by a ball mill. An ALD coating process using a rotary-type reactor is adopted. ZnO thin films are grown by 100 ALD cycles using diethylzinc and H₂O as precursors at 100℃. ALD is performed at rotation speeds of 30, 40, 50, and 60 rpm to examine the effects of rotation speed on the thin film characteristics. The physical and chemical properties of ALD-coated SnSe powders are characterized by scanning and tunneling electron microscopy combined with energy-dispersive spectroscopy. The results reveal that a smooth oxygen-rich ZnO layer is grown on SnSe at a rotation speed of 30 rpm. This result can be applied for the uniform coating of a ZnO layer on various powder materials.

• Current Photovoltaic Research
• /
• v.10 no.2
• /
• pp.39-48
• /
• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Journal of Electrical Engineering and Technology
• /
• v.7 no.4
• /
• pp.596-600
• /
• 2012

ZnO-$SnO_2$ films were deposited by rf magnetron sputtering using a ZnO-$SnO_2$ (2:1 molar ratio) target. The target was made from a mixture of ZnO and $SnO_2$ powders calcined at $800^{\circ}C$. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon ($O_2$:Ar) was varied from 0% to 10%, and the substrate temperature was varied from $27^{\circ}C$ to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-$SnO_2$ films deposited in $O_2$:Ar = 10% exhibited resistivity higher than $10^6{\Omega}cm$ and transmittance of more than 80% in the visible range.