• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1293-1298
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• 1994

(Zr, Sn)TiO4 powders were prepared in 0.05~0.13 ${\mu}{\textrm}{m}$ by coprecipitating (Zr4+, Ti4+)hydroxide on SnO2 particles and followed by calcination at 90$0^{\circ}C$ for 2 h. They sinter to 95% of relative density at 140$0^{\circ}C$ for 2 h. and shows dielectric constant, $\varepsilon$r=37.5 and quality factor, Qxf(GHz)=46,000. With 3 mol% of ZnO it sinters to rel=97.5%, $\varepsilon$r=39 and Qxf(GHz)=40,050 at 135$0^{\circ}C$ for 2 h., but raising sintering temperature to 140$0^{\circ}C$ deteriorates quality factor, relative density and microstructure with developing second phase.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Resources Recycling
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• v.30 no.1
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• pp.66-76
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• 2021

Electric arc furnace dust (EAFD) contains compounds, such as oxides and chlorides, including large quantities of Zn, Pb and Fe. An efficient and stable method for the extraction of metal elements from EAFD is the Rotary Kiln Process. This method is used to recover Zn in the form of crude ZnO (approximately 60%) via the addition of a reducing agent (coke, anthracite) and limestone (for basicity control) to EAFD. This process is commonly used in industry as well as in research and development. Currently, this method is used in many Korean commercial plants, producing approximately 150,000 tons of Crude ZnO per year. The majority of Zn is found in crude ZnO (approximately 76%). In addition components such as Pb, Cd, Sn, In, Fe, Cl, and F are present as oxides, chlorides, and alkaline compounds. This elements have an adverse effect on the zinc smelting process. Therefore, a refining process that eliminates these impurities is essential. In this study, we developed a process technology that efficiently separates Zn and Pb from byproducts (mainly chlorides). A bag filter was used to collect Zn and Pb generated during the dry purification process of crude ZnO. Pure components were recovered as metals or metal carbonate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.1-5
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• 2016

The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.

• 보존과학연구
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• s.10
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• pp.1-40
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• 1989

Between 1976 and 1984 approximately 26.7 tons of Chinese coins were recovered from a shipwreck which was found at the seabed of the Shin an area in the south-western coast of the Korean peninsula. Elements, Cu, Pb, Sn, Fe, Sb, As, Zn, Ag, Ni, Co and Mn, of 54 pieces of the coins were determined by Inductively Coupled Plasma Atomic Emission Spectroscopy(ICP-AIS). The result shows that Ch, Pb, and Sn were found to be major elements roughly the coins with the ratio of 7 : 2 : 1, respectively. Trace elements were classified into 3 levels according to the avarage concentration : Fe,As and Sb(0.1-0.5%), Ag, Mi, Co and Zn(100-1000ppm) and Mn(10ppm). Some systematic tendencies are observed in the composition change with a function of their minting ages .The Wuzhu coins(오수전) from the Eastern Han dynasty(A.D.25-219 )are much more abundant in Cu than the coins of Tang dynasty(A.D.618-907) and later periods. Major element compositions of the Kai -tong Vuan-Bao(개통원보) coins from the Tang dynasty, were remarkably variable. In general, however, the Tang dynasty coins were much more abundant in Cu than the Song dynasty(A.S.S60-1279) coins. The amount of major elements Cu and Sn decreases while that of Pb in creasesby passage of age from the Bei Song dynasty(A.D.960-1127) to later Nam Song dynasty (A.D.1127-1279 ). It means that the quality of coins mere degraded. The amounts of trace elemends(Fe, As, Co, Hn) increases with the above age. High amounts of trace elements are supposed to be a reflection of immaturity of minting techniques or use of impurity-rich raw materials. The Jin dynasty(A.D.1125-1234) coins are found to be rich in Sn and thus contain Pb as the third component. It is quite different from the coins of the Song dynasty. The Zhi-dai Tong-Bao(지대통보) coins of the Yuan dynasty from A.0.1310 are much more abundant in Cu and Sn than those of the Nam Song dynasty .

• Journal of the Korean Society for Marine Environment & Energy
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• v.12 no.4
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• pp.302-306
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• 2009

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind of influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference has caused this with the ingredient a nanoparticle has. Ag is included 2 % and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Proceedings of KOSOMES biannual meeting
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• 2008.05a
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• pp.137-141
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• 2008

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind a influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference was mused this with the ingredient a nanoparticle has. Ag is included 2% and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.251-251
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• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.98.2-98.2
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• 2012

Thin film solar cells are growing up in the market due to their high efficiency and low cost. Especially CdTe and $CuInGaSe_2$ based solar cells are leading the other cells, but due to the limited percentage of the elements present in our earth's crust like Tellurium, Indium and Gallium, the price of the solar cells will increase rapidly. Copper Zinc Tin Sulfide (CZTS) and Copper Zinc Tin Selenide (CZTSe) semiconductor (having a kesterite crystal structure) are getting attention for its solar cell application as the absorber layer. CZTS and CZTSe have almost the same crystal structure with more environmentally friendly elements. Various authors have reported growth and characterization of CZTSe films and solar cells with efficiencies about 3.2% to 8.9%. In this study, a novel method to prepare CZTSe has been proposed based on selenization of stacked Copper Selenide ($Cu_2Se$), Tin Selenide ($SnSe_2$) and Zinc Selenide (Zinc Selenide) in six possible stacking combinations. Depositions were carried out through RF magnetron sputtering. Selenization of all the samples was performed in Close Space Sublimation (CSS) in vacuum at different temperatures for three minutes. Characterization of each sample has been performed in Field Emission SEM, XRD, Raman spectroscopy, EDS and Auger. In this study, the properties and results of $Cu_2ZnSnSe_4$ thin films grown by selenization will be presented.