• Current Photovoltaic Research
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• v.1 no.2
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• pp.109-114
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• 2013

$Cu_2ZnSnS_4$ (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and $SnS_2$ were obtained at $180^{\circ}C$; single-phase CZTS nanoparticles were obtained at $280^{\circ}C$. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at $280^{\circ}C$. In the middle of 180 and $280^{\circ}C$, CZTS and ZnS phases were found. The time variation of reaction at $280^{\circ}C$ revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.175-175
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• 2016

Sn도금액은 강산에서는 $Sn^{2+}$, 강알칼리에서는 $Sn^{4+}$석출이 안정하다. 중성영역은 도금액에 $Sn^{2+}$침전을 방지하기 위하여 착화제가 필요하다. 기록에 남아 있는 가장 오래된 Sn도금은 1856년 Gore가 4가의 주석산염을 사용한 알칼리성용액이다. 그 후 50~60년 사이에 2가의 염화주석($SnCl_2$)과 KOH에 Cyan 등의 착화제를 첨가한 도금액이 발표되었다. 최초의 실용적인 알칼리주석용액은 1931년 Oplinger의 4가 주석산 염으로서, $CH_3COONa$를 완충제로 사용하였고, $Sn^{2+}$을 산화시키기 위하여 과산화물이나 과 붕산염을 첨가하였다. 알칼리성 Sn용액은 Natrium용액과 Kalium용액이 있지만, Kalium염이 용해성이 좋고, Sn농도를 높여 전류밀도를 높일 수 있다. 알칼리성용액은 도금속도가 산성용액의 1/2로 되고, 음극효율도 80~90% 정도 낮아, 두꺼운 피막이나 생산성을 중시하는 부품에는 적합하지 않다. 초기의 산성용액은 Sn의 정련목적으로 사용되었고, Pb정련에 사용된 Fluor규산용액에 Gelatine을 첨가하였다. Mathers는 Cresol산을 첨가하여 미량의 Cresol포화용액을 사용하여 고속으로 두껍게 석출시킬 수 있었다. 독일의 Schloetter도 다양한 방향족 술폰산으로써 반 광택피막을 실현하였다. 산성Sn도금액은 첨가제에 어떠한 유기화합물을 사용하는가는 도금장치나 석출상태로써 결정할 수 있다. Hothersall과 Bradshaw는 Cresol술폰산을 첨가하여 도금액 안정성 향상을 발견했다. Cresol술폰산은 $Sn^{2+}$의 안정제이며, Gelatine은 분산제기능을 한다. 붕 불화용액은 Sn농도를 높일 수 있고, $2{\sim}12A/dm^2$의 고 전류밀도의 도금이 가능하다. 1937년 Schloetter가 개발하여 미국의 제철회사에서 사용되었다. Sn-Ni도금은 Ni도금보다도 뛰어난 내식성이 있기 때문에 자전거, 자동차부품에 사용되고 있다. 실용도금액은 1951년 Parkinson이 발표한 HBF/HCL용액이다. $SnCl_2$산성용액에서 표준전위는 -0.136V인데 비하여, Ni이온의 표준전위는 -0.25V이다. HF용액에서는 불화물이온이 $Sn^{2+}$의 석출전위를 (-)방향으로 이동시켜서 합금석출이 가능하다. Sn-Co도금은 Cr도금의 색조에 가깝고, 장식목적으로 사용된다. Cr도금 대체용으로 사용된다. 내마모성이나 내식성은 Cr도금보다도 떨어지기 때문에 장식목적에 한정된다. 1953년 Parkinson은 Sn-Ni도금연구에서 동일한 용액조성으로부터 Co 30%를 석출시켰다. Sn-Zn도금은 방식도금으로서 자동차부품에 많이 사용되고 있다. Sn과 Zn의 표준전위는 서로 멀리 떨어져 있기 때문에 산성용액에서는 공석될 수 없다. 1980년대에 들면서, 방식Cd(Cadmium)도금의 독성 때문에 Sn-Zn도금을 재인식 하게 되었다. 1957년 Vaid 등이 No Cyan도금액을 발표했다. 그 후 러시아의 연구자가 안정한 도금액을 연구하였고, Srivastava와 Muckergee가 1976년에 종합하였다.

• Journal of Conservation Science
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• v.31 no.3
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• pp.319-330
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• 2015

This study attempted to review the chemical composition of 25 samples of Sangpyeongtongbo having different manufacturing place and period, and then to find the manufacturing method. As a result of chemical composition analysis of Sangpyeongtongbo, main components include Cu, Zn and Pb, and some samples contained Sn and Fe. But, the chemical composition of each Sangpyeongtongbo varied with big differences. When the main content change was examined, Cu and Sn became decreased at the later period, and Zn and Pb had higher contents. The difference in the ingredient content had close relation for the profit of Sangpyeongtongbo. When refined microstructure was observed, 25 kinds of Sangpyeongtongbo had developed different types of microstructure such as dendrite, large grain and grain refinement. But, 25 kinds of Sangpyeongtongbo had no heat treatment processing. And, the types of microstructure were difference, which seems because different microstructure was developed due to the difference of Sn and Fe and cooling speed in Sangpyeongtongbo.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Journal of Welding and Joining
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• v.23 no.4
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• pp.34-40
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• 2005

There have been numerous approaches to examine the bonding strengths of solder joints. However, despite the technical and practical limitations, the precedent test methods such as the ball shear and ball pull tests are being used in industrial applications. In this study, the optimum jaw pressure with the modified protrusion jaw was introduced in order to obtain higher successful rate f3r ball pull testing. Furthermore, the pull strengths and fracture modes of Sn-8Zn-3Bi, Sn-4Ag-0.7Cu, and Sn-37Pb eutectic solder after isothermal aging tests ($100^{\circ}C,\;150^{\circ}C$), were evaluated with the protrusion jaw. The pull strength-displacement hysteresis curves and fracture surfaces were carefully investigated to evaluate the correlation between the pull strengths and the fracture modes of each solder. In conclusion, it is verified that Au-Zn IMCs (Intermetallic Compounds) have a detrimental effect on the pull strengths and changed fracture modes of Sn-8Zn-3Bi solder. Meanwhile, the microstructure transformation influences the degradation of pull strengths of Sn-4Ag-0.7Cu and Sn-37Pb solders.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.861-866
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• 2010

Tetrapod-shaped ZnO crystals were synthesized through a simple oxidation of metallic Zn powder in air without the presence of any catalysts or substrates. X-ray diffraction data revealed that the ZnO crystals had wurtzite structure. It is supposed that the growth of the tetrapod proceeded in a vapor-solid growth mechanism. As the amount of the source powder increased, the size of the tetrapod decreased. The tip morphology of the tetrapod changed from a needle-like shape to a spherical shape with the oxidation time. ZnO crystals with rod shape were fabricated via the oxidation of Zn and Sn mixture. Sn played an important role in the formation of ZnO crystals with different morphology by affecting the growth mode of ZnO crystals. The cathodoluminescent properties were measured for the samples. The strongest green emission was observed for the rod-shaped ZnO crystals, suggesting that the crystals had the high density of oxygen vacancies.

• Proceedings of the KWS Conference
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• 1999.05a
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• pp.61-62
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.42-42
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• 2002