• Title/Summary/Keyword: Zn-Sn

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Photoelectron Spectroscopy Study of the Semiconductor Electrode Nanomaterials for the Dye Synthesized Solar Cell (염료감응 태양전지 전극용 반도체 나노 물질의 광전자분광 연구)

  • Kim, Hyun Woo;Lee, Eunsook;Kim, D.H.;Seong, Seungho;Kang, J.-S.;Moon, S.Y.;Shin, Yuju
    • Journal of the Korean Magnetics Society
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    • v.25 no.5
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    • pp.156-161
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    • 2015
  • The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

Effects of Zn Surface Finish on the Solder Joint Microstructure and the Impact Reliability (Sn-3.5Ag 솔더와 Zn 표면층의 반응을 통한 솔더 계면현상과 충격 신뢰성에 관한 연구)

  • Jee, Young-Kun;Yu, Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.4
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    • pp.87-92
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    • 2008
  • The interface microstructure of Sn-3.5Ag/Cu joint was modified by electroplating varying amount of Zn on Cu UBM. As the amount of Zn dissolved in Sn-3.5Ag solder increased with the electroplating Zn thickness, Cu-Sn IMCs such as $Cu_6Sn_5$ and $Cu_3Sn$ were replaced by Zn-containing IMCs such as $Cu_5Zn_8$ and $Ag_5Zn_8$, which increased the drop reliability of solder joints significantly. When the amount of Zn dissolved in solder was about 3.8wt%, drop resistance was best due to the effective suppression of Cu-Sn IMC and voids at the interface.

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Formation of $SnO_2$Coating Layer on the Surface of ZnS Powders (ZrS 분말표면상에 $SnO_2$코팅막의 형성)

  • 강승구;김강덕
    • Journal of the Korean Ceramic Society
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    • v.38 no.3
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    • pp.287-292
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    • 2001
  • 본 실험은 목적은 CRT(Cathode Ray Tube)용 청색 형광체인 ZnS:Ag 분말 표면에 액상법으로 SnO$_2$를 균일하게 코팅하는 공정조건을 연구하는 것이다. 용매로서 물을 사용하고, Sn의 공급물질로서 SnCl$_4$.4$H_2O$, 침전 촉매로서 CO(NH$_2$)$_2$를 각각 사용하여, 균일 침전 방법으로 ZnS:Ag 분말표면에 SnO$_2$를 코팅할 수 있었다. 초기에 첨가되는 SnCl$_4$.4$H_2O$의 량이 Sn/Zn의 몰비기준으로 0.017인 경우에 ZnS:Ag 분말표면에 Sn(OH)$_4$가 균일하게 코팅되지만, 그 이상 첨가되면 과량의 Sn(OH)$_4$가 입자들 사이에 응집되었다. 코팅된 Sn(OH)$_4$는 비정질 구조로 규명되었으며, 이를 SnO$_2$결정상으로 전이시키기 위하여 300~$700^{\circ}C$ 범위 내에서 열처리를 행하였다. 비정질 Sn(OH)$_4$는 20$0^{\circ}C$이하에서 탈수되었고 45$0^{\circ}C$부터 SnO$_2$로 결정화되기 시작하였다. 순수한 ZnS의 경우, 50$0^{\circ}C$이하에서는 상변화가 없으나, $600^{\circ}C$에서 일부 산화되었으며 $700^{\circ}C$에서는 완전히 ZnO로 산화되므로, ZnS의 산화방지 및 SnO$_2$의 결정화를 동시에 만족하는 최고 열처리온도는 50$0^{\circ}C$로 규명되었다. 그러나 ZnS에 SnO$_2$가 코팅된 시편의 경우에는 $600^{\circ}C$가 되어도 ZnS 상이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.

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Effect of CaMgSn Ternary Phase on the Aging Response of Mg-Sn-Zn-Ca Alloys

  • Wahid, Shah Abdul;Lim, Hyun-Kyu;Jung, Young-Gil;Yang, Won-Seok;Ha, Seong-Ho;Yoon, Young-Ok;Kim, Shae K.
    • Journal of Korea Foundry Society
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    • v.38 no.4
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    • pp.75-81
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    • 2018
  • This study examined the effect of the CaMgSn ternary phase on the aging response of the Mg-Sn-Zn alloy. The results revealed that the CaMgSn ternary phase formed in rod-like or needle-like shapes in Mg-3Zn-0.3Ca-xSn (x=1.5, 3, and 5 wt%) alloys and its size decreased as the Sn content increased from 1.5 wt% to 5 wt%. The Mg-3Zn-0.3Ca-5Sn alloy with a relatively fine CaMgSn phase was subjected to solution heat treatment and an aging process. Both the Mg-5Sn-3Zn-0.3Ca and Mg-5Sn-3Zn (base alloy) alloys had similar peak hardness values throughout all aging temperatures but the time-to-peak hardness in the Mg-5Sn-3Zn-0.3Ca alloy was 24-36 hours-earlier than that in the base alloy. Precipitates in the Mg-5Sn-3Zn-0.3Ca alloy were more refined than those in the Mg-5Sn-3Zn alloy and were mostly formed on basal planes. The $Mg_2Sn$ phase formed in either plate-like or rod-like shapes in the Mg-5Sn-3Zn alloy, whereas block-shaped $Mg_2Sn$ particles also formed in the Mg-5Sn-3Zn-0.3Ca alloy.

Corrosion Protection of Steel by Applying a Zn-Sn Metal Spray System (Zn-Sn 합금을 이용한 강구조물의 금속용사공법 방식성능평가 연구)

  • Ryu, Hwa-Sung;Jeong, Dong-Geun;Lee, Han-Seung
    • Journal of the Korea Institute of Building Construction
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    • v.14 no.6
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    • pp.505-513
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    • 2014
  • The purpose of this study is to evaluate the corrosion protective properties of a Zn-Sn metal spray method according to the contents of Zn and Sn by a CASS test and the electrochemical theory. In the experiment, the CASS test and the electrochemical test were conducted to investigate the corrosion protective property of the Zn-Sn Metal Spray system, the Zinc galvanizing system, and the heavy duty coating system. As a result, it was confirmed that the Zn-Sn (65:35) Metal Spray system had very high corrosion protective property through the electrochemical characteristic as comparison with the other anti-corrosion systems and was very effective to prevent steel products from corrosion.

Characterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells (18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석)

  • Kim, Sun Cheul;Kim, Seung Tae;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.2
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    • pp.54-60
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    • 2015
  • ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

Investigation of the corrosion properties of as extruded Mg5Sn(1-4)Zn ternary alloy (Mg5Sn(1-4)Zn 삼원계 압출재의 부식저항성 연구)

  • Ha, Heon-Yeong;Kim, Seong-Gyeong;Gang, Jeon-Yeon;Im, Chang-Dong;Yu, Bong-Seon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.15-15
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    • 2012
  • Mg(1-4)Zn 이원계 압출재 및 Mg5Sn(1-4)Zn 삼원계 압출재의 부식거동을 3.5 % NaCl 용액에서 다양한 전기화학기법을 이용하여 평가하였다. 이원계 합금에 대한 연구결과, Zn 함량 증가에 따라 Mg 모재의 부동태화가 촉진되었고 동시에 수소발생속도가 증가하였으며 그 결과 부식전위의 상승이 관찰되었다. 그러나 Zn 함량 증가에 따른 부동태화 효과보다 수소발생 증가 효과가 우세하므로 결과적으로 Zn 함량 증가에 따라 부식속도는 증가하였다. Mg5Sn(1-4)Zn 삼원계 합금에 대한 부식시험 결과, Mg5Sn2Zn 합금이 가장 낮은 부식속도 및 우수한 부동태화를 나타내었으며 이는 합금원소 Sn의 수소발생속도 감소효과와 합금원소 Zn의 부동태화 효과의 상호작용에 의한 것으로 사료된다.

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The Oxidation Study of Lead-Free Solder Alloys Using Electrochemical Reduction Analysis (전기화학적 환원 분석을 통한 무연 솔더 합금의 산화에 대한 연구)

  • Cho Sungil;Yu Jin;Kang Sung K.;Shih Da-Yuan
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.35-40
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    • 2005
  • The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

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CO Sensing Properties in Layer structure of SnO2-ZnO System prepared by Thick film Process (SnO2-ZnO계 후막센서 구조에 따른 CO 감지 특성)

  • Park, Bo-Seok;Hong, Kwang-Joon;Kim, Ho-Gi;Park, Jin-Seoung
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.155-162
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    • 2002
  • The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

Optical Properties of Undoped and Doped$Zn_4SnSe_6$Single Crystals ($Zn_4SnSe_6$$Zn_4SnSe_6:Co^{2+}$단결정의 광학적 특성연구)

  • 이기형;김덕태;박광호;현승철;김형곤;김남오
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.1
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    • pp.1-5
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    • 2003
  • Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystals at 289k were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystal was observed and described as originating from the electron transition between energy levels of Co$^{2+}$ion sited at T$_{d}$ symmetry point.y point.