• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1245-1247
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• 1995

In this paper, Analyzed structual property using SEM and XRD. The longer distance between substrate and target enhance crystalographic orientation of (110)plane, but inhibit growth of (002)plane. Also, deposited ZnO thin film on electrode layer inhibit crystalographic orientation of (002)plane, expecially Al electrode inhibit stronger than Pt layer. And using fabricated transducer, analyzed eletric and frequency characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.254-257
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• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1050-1056
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• 2014

Dye sensitized solar cells were fabricated using natural dyes extracted from beetroot, rose and strawberry. The ZnO nanorod working electrode has been prepared by simple hydrothermal method. The crystallinity and morphology of the prepared electrode has been studied using X-ray diffraction and scanning electron microscopy techniques. The effect of natural dye extract temperature, pH of the dye and the solvent used for dye preparation on the solar cell characteristics have been studied. The efficiency of strawberry extract sensitized ZnO nanorod solar cells are found to be better than the other solar cells sensitized using beetroot and rose extracts.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.57-63
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• 2011

Photovoltaic effect is confirmed in DSSC fabricated under the common conditions. In upper electrodes, validity of ZnO as new TCO material was investigated and an improvement of characteristics in DSSC was tried by control of process conditions at semiconductive powder layer. ZnO thin film showed very high resistivity, therefore efficiency of solar cell was lower than that of conventional ITO-related material. DSSC characteristics was able to improve by thin blocking layer doposited between the TCO and semiconductor layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.819-822
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• 1993

The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.1
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.2
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• pp.155-160
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• 2008

In this study, the nitrate removal efficiency was examined under a variety of operating conditions, such as different doses of the reducing agent, different electrode types, different HRTs(hydraulic retention times), and different current densities, using the multistep electrochemical process. The nitrate removal efficiency increased and the input energy decreased when the reducing agent was used, and almost no difference was found between the electrode types in terms of their nitrate removal efficiency and current efficiency. So that the Zn reducing agent could be recovered, though, the B-type electrode was chosen(step 1: Pt-Zn; step 2: Pt-Zn; step 3: Pt-Zn; step 4: Pt-Zn). HRT experiments were carried out on constant electric current density unrelated HRTs and various electric current density related HRTs: the constant amount of electric current per unit volume. As a result, HRT and the electric current density caused concentration polarization and the lack of an applied current. That is to say,the lower the HRT, the greater the decrease in concentration polarization and in the amount of applied current per unit volume. Therefore, optimal conditions were found through the experiments that were conducted on HRT and electric current density. When a spacer was installed in the process, the nitrate removal efficiency and energy efficiency increased even more because the diffusion likewise increased.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.2
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• pp.137-142
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• 2011

This study was conducted to establish the optimal electrolyte and bismuth concentrations using bismuth film electrode in laboratory and to confirm the possibilities of using this operational condition for heavy metals monitoring in field. In lab test, heavy metal measurement was not accurate more than 600 ppb when heavy metal (Pb, Cd, Zn) range 100~1,000 ppb was measured with bismuth 2,000 ppb. So, bismuth and heavy metal was reacted about 1:1 with ASV method. In electrolyte test, 0.1 M acetate buffer (pH 4.5), 0.1 M chloroacetate buffer (pH 2.0), 0.1 M HCl (pH 2.0), 0.1 M $HNO_3$ (pH 2.0) was tested. As a results, 0.1 M acetate buffer was most suitable in ASV measurement with bismuth film electrode. In field application, Pb, Cd and Zn was measured respectively 36~45 ppb, 84~91 ppb, 90~98 ppb when heavy metal (Pb, Cd, Zn) 100 ppb was spiked in field sample. These results were identified of matrix effect in field sample, So relationship between heavy metal measurement and matrix effects will be studied.