• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.323-326
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• 2010

$(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors doped with Ca were synthesized by solid state reaction method. $(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors showed XRD patterns of Willemite structure. Also, $CaSiO_3$ structure and new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with increasing value of x were observed from XRD and PL. The new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with doping Ca was attributed to formation of $CaSiO_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.363-366
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• 2007

[ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.392-393
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• 2007

PDP용 녹색 $Zn_2SiO_4$:Mn 형광체의 발광특성과 결정성을 향상시키기 위해 co-dopant로 Mg를 첨가한 $(Zn_{1-x}Mg_x)_2SiO_4$:Mn 형광체를 합성하였다. 합성된 형광체의 발광특성을 PL로 조사한 결과, $Zn_2SiO_4$:Mn 형광체는 Mg의 농도에 관계없이 530nm에서 녹색 발광을 하였고, Mg의 농도가 0.5 mol%일 때 가장 높은 발광세기가 나타났다. 이것은 Zn과 이온반경이 비슷한 Mg가 치환되어 모체에서의 Mn으로의 에너지 전이가 증가하여 발광세기가 증가한 것으로 생각된다.

• Journal of The Korean Society of Grassland and Forage Science
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• v.24 no.3
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• pp.183-192
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• 2004

This pot experiment was conducted to investigate the effects of systematic variation application of Fe, Mn, Cu, and Zn on forage performance of orchardgrass and white clover. The treatments of systematic variation were 0/100, 25/75, 50/50. 75/25, and $100/0\%$ in the Fe/Cu(trial-1). Mn/Zn(trial-2), and Fe+Cu/Mn+Zn(trial-3), respectively The treatments of Fe/Mn/Cu/Zn(trial-4) were composed of $70\%$ for main element and $10\%$ for other 3 elements, respectively. 1. The contents of N-compounds in forages tended to be in inverse proportion to the yields. In the Mn/Zn trial, the 0/l00 to white clover resulted in the relatively high contents of soluble N-compounds and low ratio of pure protein/soluble N-compounds in company with a severe yield decrease. 2. In the Fe+Cu/Mn+Zn trial, the 0/100 and 100/0 resulted in the somewhat high contents of N-compounds in white clover. It was likely to be caused by the concentration effect derived from yield decrease. In addition, the 100/0 resulted in the relatively high content of soluble N-compounds and low ratio of pure protein/soluble N-compounds. The protein synthesis in white clover was likely to be negatively influenced by the 100/0. 3. In the Fe/Mn/Cu/Zn trial, white clover showed the low contents of crude and pure protein at the 1st cut. It was likely to be caused by the unbalanced mutual ratios derived from the high application levels of each single element. 4. In white clover at the 5th cut, the 0/100 of Mn/Zn and 100/0 of Fe+Cu/Mn+Zn resulted in the relatively high content of K. It was likely to be caused by the concentration effect derived from yield decrease.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.379-385
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• 2003

The surface morphology, the glossiness and the hardness of Zn-Cr and Zn-Cr-X(X:Co, Mn) alloy electrodeposits were investigated by using chloride bath with EDTA additive and flow cell system. The surface morphology of Zn-Cr alloy and Zn-Cr-Mn alloy changed from fine needle shape crystalline structure to colony structure of fine granular crystallites with increasing current density in the range of 20-100 $A/dm^2$. The surface morphology of Zn-Cr-Co alloy deposited from low Co concentration bath(2.5-10 g/$\ell$) was similar to that of Zn-Cr alloy, while that of Zn-Cr-Co alloy deposited from high cobalt concentration bath was fine granular crystalline structure in the same range of current density. The glossiness of Zn-Cr and Zn-Cr-Mn alloy increased noticeably with increasing current density, while that of Zn-Cr-Mn alloy decreased with increasing Mn concentration of bath in high current density region. The glossiness of Zn-Cr-Co alloy deposited from low Co concentration bath increased with current density while that of the alloy from high Co concentration bath decreased with increasing current density. The hardness of Zn-Cr and Zn-Cr-X alloy increased noticeably with current density.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1204-1211
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• 2000

Mn-Zn 페라이트 소결체와 SiO$_2$-PbO-ZnO 삼성분계 유리와의 계면반응에서 페라이트와 유리에 각각 첨가된 ZnO가 계면반응에 미치는 영향을 조사하였다. SiO$_2$-PbO-ZnO 삼성분계 유리에 첨가된 ZnO 함량이 낮은 경우 페라이트와의 접합계면에서 생성되는 중간상은 Pb$_2$(Mn,Fe)$_2$Si$_2$O$_{9}$와 Pb$_{8}$(Mn,Fe)Si$_{6}$O$_{21}$의 고용체였으며, ZnO 농도가 증가함에 따라 중간상은 사라졌다. 유리속의 ZnO 성분이 증가함에 따라 페라이트 소결체 쪽의 계면부근에 Zn의 농도가 증가하는 특이한 분포가 나타났다. 이는 유리 속에 첨가된 Zn 이온의 높은 활동도로 인해 페라이트에 포함된 Zn 이온의 용해반응이 선택적으로 억제되어 나타난 것으로 생각된다. 페라이트에 첨가된 ZnO 함량이 낮은 경우 SiO$_2$-PbO 이성분계 유리와의 접합계면에서 페라이트의 용해에 따른 침식과 입계를 통한 유리의 침투가 심하게 일어났으며, ZnO 함량이 증가함에 따라 계면을 통한 상호확산과 반응이 억제되었다.

• Journal of Power System Engineering
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• v.10 no.3
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• pp.45-50
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• 2006

In this paper, creep tests of Mg-Zn-Mn and Mg-Zn-Mn-Ca alloy casted by mold under the temperature range of 473.00-573.00K, and the stress range of 23.42-87.00Mpa were done with the equipment of automatic controlled temperature and computer for data acquisition. The activation energies were obtained by relationship between creep rate and temperature, and the stress exponents were obtained by relationship between creep rate and stress. From the experiment results, the activation energies of Mg-Zn-Mn and Mg-Zn-Mn-Ca alloy were 149.87kJ/mol, 147.97kJ/mol, respectively, and the stress exponents of those alloy were 5.13, 5.59, respectively, under the temperature of 473.00-493.00K and the stress range of 62.43-78.00Mpa. And the activation energies of those alloy were 134.41kJ/mol, 129.22kJ/mol, respectively, and the stress exponent of those alloy were 3.48, 3.77, respectively, under the temperature of 553-573Mpa and the stress range of 23.42-39.00Mpa. Also the lifes of Mg-Zn-Mn-Ca alloy were higher than those of Mg-Zn-Mn alloy, and the results of SEM showed fracture surfaces under low temperature had smaller dimples than those under high temperature.

• Bulletin of the Korean Chemical Society
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• v.35 no.12
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• pp.3601-3608
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• 2014

RGB light emitting ZnSe based nanocrystals: ZnSe (blue), ZnSe:Cu (green) and ZnSe:Mn (red) were synthesized by capping the surface of the nanocrystals with oleic acid. The obtained nanocrystal powders were characterized by using XRD, HR-TEM, ICP-AES, FT-IR, and FT-Raman spectroscopies. The optical properties were also measured by UV/Vis and photoluminescence (PL) spectroscopies. The PL spectra showed broad emission peaks at 471 nm (ZnSe), 530 nm (ZnSe:Cu) and 665 nm (ZnSe:Mn), with relative PL efficiencies in the range of 0.7% to 5.1% compared to a reference organic dye standard. The measured average particle sizes from the HR-TEM images for those three nanocrystals were 4.5 nm on average, which were also supported well by the Debye-Scherrer calculations. The elemental compositions of the ZnSe based nanocrystals were determined by ICP-AES analyses. Finally, the drawn CIE diagram showed the color coordinates of (0.15, 0.16) for ZnSe, (0.22, 0.57) for ZnSe:Cu, and (0.62, 0.35) for ZnSe:Mn respectively, which were fairly well matched to that of the RGB color standards.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.