• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.180-184
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• 1989

Overviews of vertical and horizontal GaAs/AlGaAs OEIC are shown. Researching double Zn diffusion process, we obtain Xj=At1/2-Bd1, where A=2.5${\mu}{\textrm}{m}$/[hr]1/2, B=0.625, of which process is recommended for exact diffusion interface area control of GaAs/AlGaAs. It is proved to be 100A/100A AlAs/GaAs using MOCVD by measurement of photo-luminescence which shows a luminescence peak corresponding to the 798.4nm wavelength calculated values of 38meV ground state above GaAs conduction band.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• 한국지반환경공학회 논문집
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• 제3권1호
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• pp.13-26
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• 2002

본 연구에서는 아연 및 카드뮴의 확산계수에 미치는 온도영향에 대한 연구를 위해 $15^{\circ}C$와 $55^{\circ}C$에서 확산실험을 수행하였다. 온도변화에 따른 유효확산계수의 변화를 비교할 경우 두 금속 모두에서 $55^{\circ}C$에서의 유효확산계수가 $15^{\circ}C$에서의 확산계수에 비해 최대 10배까지 큰 것으로 나타났다. 그리고 온도증가에 따른 확산속도의 증가와 더불어 중금속들의 흡착량 또한 증가하는 것으로 나타났다. 그러므로 지연인자를 얻는 방법의 차이에 따라 비교적 흡착량을 과다하게 평가하는 흡착실험을 통해 얻은 지연인자를 이용하여 유효확산계수를 산정할 경우 확산계수를 과대평가 할 수 있다. 그리고 연속추출 실험 결과, 아연의 경우에는 탄산염 형태로의 분배경향이 가장 크게 나타났고, 카드뮴의 경우에는 이온교환형태로의 분배가 가장 크게 나타났다. 특히 실험을 수행한 온도가 증가함에 따라 아연 확산실험의 경우에는 탄산염 형태와 유기물 형태로의 분배가 증가하는 것으로 나타났다. 반면 카드뮴 확산실험의 경우에는 온도변화와 무관하게 60%이상이 이온교환 형태로 분배됨을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.110-111
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• 2007

In order to form a p-type ZnO thin film, ZnO thin film is deposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs substrate to the ZnO thin films. Photoluminescence (PL) measurement reveals that the improved qualify of ZnO thin films is acquired at the growth temperature of $400^{\circ}C$. It is ZnO film grown at $100^{\circ}C$ that shows the change from n-type to p-type by the thermal treatment. Measured carrier concentration in the film is changed from $-5.70{\times}10^{13}\;to\;9.09{\times}10^{18}$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.63-63
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• 2000

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 춘계학술발표회 초록집
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• pp.52-53
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.123-123
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• 1996

• 한국재료학회지
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• 제28권5호
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• pp.286-294
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• 2018

Hot-press forming(HPF) steel can be applied successfully to auto parts because of its superior mechanical properties. However, its resistances to aqueous corrosion and the subsequent hydrogen embrittlement(HE) decrease significantly when the steel is exposed to corrosive environments. Considering that the resistances are greatly dependent on the properties of coating materials formed on the steel surface, the characteristics of the corrosion and hydrogen diffusion behaviors regarding the types of coating material should be clearly understood. Electrochemical polarization and impedance measurements reveal a higher corrosion potential and polarization resistance and a lower corrosion current of the Al-coating compared with Zn-coating. Furthermore, it was expected that the diffusion kinetics of the hydrogen atoms would be much slower in the Al-coating, and this would be due mainly to the much lower diffusion coefficient of hydrogen in the Al-coating with a face-centered cubic structure. The superior surface inhibiting effect of the Al-coating, however, is degraded by the formation of local cracks in the coated layer under severe stress conditions, and therefore further study will be necessary to gain a clearer understanding of the effect of cracks formed on the coated layer on the subsequent corrosion and hydrogen diffusion behaviors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.