• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.323-326
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• 2010

$(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors doped with Ca were synthesized by solid state reaction method. $(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors showed XRD patterns of Willemite structure. Also, $CaSiO_3$ structure and new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with increasing value of x were observed from XRD and PL. The new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with doping Ca was attributed to formation of $CaSiO_3$.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.227-230
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• 2016

Zn_xMn_3-xO₄ (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200℃ for 12 h, cooled at a rate of 2℃/min to 800℃, and subsequently quenched to room temperature. We investigated the electrical properties of Zn_xMn_3-xO₄ specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn_1.10Mn_1.90O₄ specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×10³ cmHz^1/2/W, respectively.

• 한국재료학회지
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• 제21권6호
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.210-214
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• 2016

We investigated the sintering behavior and piezoelectric properties of lead-free $(K_{0.5}Na_{0.5})NbO_3$ ceramics co-doped with excess 0.01 mol ZnO and x mol $MnO_2$, where x was varied from 0 to 0.03. Excess $MnO_2$ addition was found to retard the grain growth and densification during sintering. However, 0.005 mol $MnO_2$ addition improved the piezoelectric properties of 0.01 mol ZnO added $(K_{0.5}Na_{0.5})NbO_3$ ceramics. The planar mode piezoelectric coupling coefficient, electromechanical quality factor, and piezoelectric constant $d_{33}$ of 0.01 mol ZnO and 0.005 mol $MnO_2$ added specimen were 0.40, 304, and 214 pC/N, respectively.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국재료학회지
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• 제20권3호
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• pp.137-141
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• 2010

The $(1-x)La_{0.7}Sr_{0.3}MnO_3(LSMO)/xZnFe_2O_4$(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

• 한국결정학회지
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• 제13권2호
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• pp.63-68
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• 2002

PDP(Plasma Display Panel)에 적용하고자 하는 녹색 형광체 Zn/sub 2-x/Mn/sub x/SiO/sub 4/를 고상반응법으로 제작하였다. 소성온도, 열처리분위기의 수소와 질소가스의 비 그리고 Mn의 첨가제 및 co-dopant가 형광체의 특성에 미치는 영향에 대하여 관찰하였다. Mn의 농도 x=0.002로 하여 소성온도 1400℃에서 발광특성이 가장 우수하였고, co-dopant의 영향에서는 Cr/sup 3＋/를 첨가하였을 때 다른 첨가제를 사용하였을 때 보다 발광특성이 향상되는 것이 관찰되었다.

• 한국자기학회지
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• 제15권2호
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• pp.137-141
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• 2005

Spinel계 유화물 $Zn_xFe_{1-x}Cr_2S_4$(x=0.05, 0.1, 0.2)에 대하여 X선 회절법, 자기저항측정, $M\ddot{o}ssbauer$ 분광법을 이용하여 CMR 특성과 자기적 성질을 연구하였다. 결정구조는 상온에서 입방정으로 정상 spinel 구조를 갖는 것으로 나타났다. 자기저항 실험결과 160K 부근 이하에서는 반도체적 전기전도 특성을 보이며, Curie 온도부근에서 최대자기저항 온도가 나타났다. Zn 조성값이 증가함에 따라 Jahn-Teller 효과에 의한 완화 현상이 증가되었으며, 전기 사중극자 이동값 역시 증가되고, 초미세 자기장값은 감소하였다. CMR 특성은 heterovalency에 의한 이중교환 상호작용이나, $Fe^{2+}$와 $Cr^{3+}$ 그리고 $Fe^{3+}$ 사이의 삼중교환 상호작용과는 다른 동적 Jahn-Teller 효과에 의한 도체-반도체전이와 절반 금속성 에너지 밴드구조에서 스핀전자 전이에 의하여 발생되는 것으로 예측된다.

• 한국세라믹학회지
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• 제38권6호
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• pp.506-508
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• 2001

The ferrite plating with applying power ultrasound waves of 19.5 kHz and 600W enabled us to encapsulate entirely MnZn ferrite cores for transformers with Ni$\sub$x/Zn$\sub$y/Fe$\sub$3-x-y/O$_4$coating. Supplying a NH$_4$OH solution during the plating broke the limit of the solubility of Ni ions to ferrite-plated films. The electrical resistivity of the NiZn ferrite coating increased with increasing the Ni and Zn content, reaching 2.3${\times}$10$\^$5/Ωcm at the composition of Ni$\sub$0.24/Zn$\sub$0.30/Fe$\sub$2.46/O$_4$. The saturation magnetization was 540 emu/㎤. As a result, the MnZn ferrite cores were successfully encapsulated with the NiZn ferrite coatings for an insulation layer.

• 자원환경지질
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• 제52권6호
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• pp.529-539
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• 2019

본 연구에서는 pH 변화에 따른 인공 산성광산배수로부터 중금속 제거와 침전물 생성에 대한 연구를 수행하였다. 인공 산성광산배수는 폐광산에서 유출되는 산성광산배수에 다량 포함된 Fe, Al, Cu, Zn, Mn의 황산염을 이용하여 제조하였다. 실험은 5가지의 중금속에 대하여 초기 농도 30과 70 mg/L의 단일 및 혼합 시료를 이용하여 수행하였다. Fe와 Al은 각각 pH 4.0과 5.0에서 대부분 제거되었으며 그 외 중금속은 pH가 증가함에 따라 서서히 감소하였다. 단일 및 혼합 중금속 시료에 대한 pH 증가에 따른 농도 변화는 대체로 유사한 경향을 나타낸다. 수용액으로부터 중금속 제거 효과는 초기 농도와 관계없이 유사한 경향을 나타내고 pH 변화에 따라 확연한 차이를 나타낸다. X-선회절분석을 이용하여 침전물에 대한 광물 감정을 수행하였으며 pH가 증가함에 따라 결정도가 증가하는 경향을 나타낸다. 수용액 내에 중금속 농도가 감소하면서 생성되는 침전물은 Fe-침철석(FeOOH), Al-배사알루미나이트(Al₄(SO₄)(OH)₁₀·4H₂O), Cu-코넬라이트Cu₁₉(OH)₃₂(SO₄)Cl₄·3H₂O)와 테놀라이트(tenorite: CuO), Zn-진사이트(ZnO), Mn-하우스마나이트(Mn₃O₄)이다.