• 제목/요약/키워드: Zn$_2$SiO$_4$:Mn

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액상반응법으로 제조한 $\textrm{Zn}_2\textrm{SiO}_4$:Mn 녹색 형광체의 발광특성 (Photoluminescent Properties of $\textrm{Zn}_2\textrm{SiO}_4$:Mn Green Phosphors Prepared by the Solution Reaction Method)

  • 박응석;장호정;조태환
    • 한국재료학회지
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    • 제9권1호
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    • pp.46-50
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    • 1999
  • 액상반응법에 의해 $\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ 녹색 형광체를 합성한 후 소성온도($900^{\circ}C$-$1200^{\circ}C$) 및 Mn 활성제 농도(x=0.01~0.20)에 따른 발광특성과 결정특성을 조사하였다. 147nm와 254nm 여기원을 사용한 경우 형광체의 소성온도가 $900^{\circ}C$에서 $1200^{\circ}C$로 증가함에 따라 상대발광피크강도는 약 4배 이상 크게 증가하였다. XRD 분석결과 $1100^{\circ}C$이상의 소성온도에서 $\textrm{Zn}_{2}\textrm{SiO}_{4}$:Mn 녹색 형광체에서 나타나는 전형적인 willemite 결정구조를 보여주었다. $1200^{\circ}C$의 온도로 소성된 $\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$형광체 시료의 경우 147nm 여기원에서 Mn 활성제 농도가 x=0.02에서 최대 발광강도를 나타내었으며 x=0.10 이상에서 발광강도가 급격히 저하하는 농도 칭 현상이 나타났다. SEM 분석결과 형광체 입자는 구형에 가까운 형상을 보여주었으며 $1200^{\circ}C$에서 소성된 형광체 입자크기는 약 2~3$\mu\textrm{m}$이었다.EX>이었다.

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자전연소 합성법을 이용한 Zn2SiO4:Mn2+ 형광체 합성시 Zn 및 Mn의 영향 (Effect of Zn and Mn on the Synthesis of Zn2SiO4:Mn2+ Phosphor by SHS)

  • 이종은;김병범;이혁희;원창환
    • 한국재료학회지
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    • 제14권12호
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    • pp.889-892
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    • 2004
  • The synthesis of $Zn_{2}SiO_4:Mn^{2+}$ for PDP green phosphor by SHS(Self-propagating High temperature Synthesis method) was studied. The precursors were well mixed and cold compacted. And then, the green pellet was synthesized at high temperature through self-propagating high temperature zone. Because this reaction uses the heat resulted from the oxidation of Zn metal powder in this system, Zn/ZnO mole ratio is one of the most important reaction variable. Throughout several experiments, the optimal condition of Zn/ZnO mole ratio and Mn concentration are 1.2/0.8 and 0.05mo1e, respectively.

ZnGa$_2$O$_4$형광박막의 발광특성에 미치는 도핑 및 어닐리의 효과 (Doping and Annealing Effect on Luminescent Characteristics of $_2$ Phosphor Thin Films)

  • 정영호;정승묵;김석범;김영진
    • 한국세라믹학회지
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    • 제35권6호
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    • pp.619-625
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    • 1998
  • Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin film phosphors were prepared on Si(100) wafers and ITO coated glass substrates by rf magnetron sputtering technique and the effects of the substrates dopant and the sputtering paramet-ers were analyzed, Changes of the oreintation were observed after annealine tratment. The grain size of {{{{ {Zn {Ga }_{2 }O }_{4 } }} : Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate which resulted in higher PL intensity. The PL spectra of Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin films showed sharp green luminescence spec-trum. According to CL spectrum it could be concluded that Mn ions acted as an actuator for green emission by substituting Zn atom sites.

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Structural analysis and photoluminescent study of thin film rhombohedral zinc orthosilicate doped with manganese

  • Yoon, Kyung-Ho;Kim, Joo-Han
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.114-114
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    • 2010
  • In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

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녹색발광 Zn2SiO4:Mn2+ 형광체가 코팅된 엑시머 램프의 제작 및 특성 (Fabrication and Property of Excimer Lamp Coated with Green-emitting Zn2SiO4:Mn2+ Phosphor Film)

  • 강부식;정현지;정용석;손세모;김종수
    • 반도체디스플레이기술학회지
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    • 제21권4호
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    • pp.106-109
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    • 2022
  • The green-emitting Zn2SiO4:Mn2+ phosphor film was evaluated in a xenon excimer lamp. The phosphor film with 2 ㎛ thick was formed of monolithic structure on the inner side of quartz through a long-time annealing process of coated ZnO solution doped with Mn2+ ion and SiO2 of quartz tube. The coated quartz was filled with 100 torr of xenon gas, and simultaneously both sides was melt and sealed. The xenon-field quartz tube was discharge by applying the voltage of 15 kV with a frequency of 26 kHz, and emitted the glow with dominant peak at 172 nm. The vacuum ultraviolet excited the inner-side coated Zn2SiO4:Mn2+ phosphor film, which emitted the pure and strong green light.

Zn$_2$SiO$_4$:Mn 녹색형광체의 입도제어 및 발광특성 (Control of Particle Size and Luminescence Property in Zn$_2$SiO$_4$:Mn Green Phosphor)

  • 성부용;정하균;박희동
    • 한국재료학회지
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    • 제11권8호
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    • pp.636-640
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    • 2001
  • PDP용 녹색 형광체의 발광특성을 개선시키기 위해 고안된 액상의 화학적 합성법을 사용하여 조성식이 $Zn_{2-x}$ $SiO_4$:xMn(x=0.05, 0.08)인 형광체를 입자크기가 0.5~2$\mu\textrm{m}$로 조절하여 제조하였다. 제조된 형광체 입자는 구상이며 잘 분산된 형상을 봉주었고, 고상반응법에 비해 상대적으로 낮은 $1080^{\circ}C$에서 willemite구조의 단일상을 얻을 수 있었다. 또한 진공 자외선 영역의 147 nm의 여기원을 사용하여 광발광 특성을 조사하였다. 입자의 크기가 1$\mu\textrm{m}$이고 Mn의 도핑양이 8mole%일 때, 상용 형광체와 비교하여 발광세기는 약 40% 향상되었고 색좌표는 x=0.24, y=0.69로 거의 일치하는 결과를 얻을 수 있었다. 측정된 형광체의 잔광시간은 7.8ms이었다.

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Zn$_2$SiO$_4$:Mn 녹색형광체의 입도제어 및 발광특성 (Control of Particle Size and Luminescence Property in Zn$_2$SiO$_4$:Mn Green Phosphor)

  • 성부용;정하균;박희동
    • 한국재료학회지
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    • 제11권8호
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    • pp.363-363
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    • 2001
  • PDP용 녹색 형광체의 발광특성을 개선시키기 위해 고안된 액상의 화학적 합성법을 사용하여 조성식이 $Zn_{2-x}$ $SiO_4$:xMn(x=0.05, 0.08)인 형광체를 입자크기가 0.5~2$\mu\textrm{m}$로 조절하여 제조하였다. 제조된 형광체 입자는 구상이며 잘 분산된 형상을 봉주었고, 고상반응법에 비해 상대적으로 낮은 $1080^{\circ}C$에서 willemite구조의 단일상을 얻을 수 있었다. 또한 진공 자외선 영역의 147 nm의 여기원을 사용하여 광발광 특성을 조사하였다. 입자의 크기가 1$\mu\textrm{m}$이고 Mn의 도핑양이 8mole%일 때, 상용 형광체와 비교하여 발광세기는 약 40% 향상되었고 색좌표는 x=0.24, y=0.69로 거의 일치하는 결과를 얻을 수 있었다. 측정된 형광체의 잔광시간은 7.8ms이었다.

Mg와 Mn이 도핑된 $Zn_2$$SiO_4$ : Mn, Mg 녹색 형광체의 빛 발광과 잔광시간 특성 (The Photoluminescence and Decay time of the Green Phosphor $Zn_2$$SiO_4$:Mn, Mg)

  • 조봉현;황택성;손기선;박희동;장현주
    • 한국세라믹학회지
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    • 제35권10호
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    • pp.1101-1106
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    • 1998
  • Various $Zn_{2-x}SiO_4$:xMn based green phosphors were investigated in association with a co-dopant. The co-dopant incorporated into the phosphors are believed to alter the internal energy state of $Zn_{2-x}SiO_4$ : xMn So that the improvement in their intensity could be expected. Phosphor samples were prepared using the solid state reaction therein raw powders are mixed in the acetone and successively fired at $1300^{\circ}C$ for 4 hour. The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmoshpere and thereby giving The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmosphere and thereby giving rise to conspicuous enhancement of radiative efficiency. Basically the 0.08 mole ratio of the Mn con-centrations has the maximum value of the intensity so that a co-dopant are added to this Mn con-centration. When the Mg is co-doped with Mn luminescent intensity is proven to be promoted significantly.

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