• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.378-383
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• 2007

A novel fabrication method for the multi-component metal oxides such as zirconium titanate($Zr_xTi_{1-x}O_2$) has been suggested, which would yield the uniform film characteristics and control the film composition at relatively low process temperature. The method has the basic concept that firstly layer-by-layer structure is constructed with the primitive oxide layers, which are components of the desired multi-component oxides, and secondly the film is annealed at appropriate thermal conditions for the transformation to a single-phase multi-component oxides. In this study, PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) possessing the superior thickness controllability was introduced to prepare $ZrO_2$ and $TiO_2$ thin film for zirconium titanate. Single-phase zirconium titanate thin films have been prepared successfully by the interdiffusion of oxide multilayers having several alternating layers of $ZrO_2$ and $TiO_2$. The Zr/Ti ratio of zirconium titanate could be controlled easily by altering the thickness of $ZrO_2$ and $TiO_2$ thin film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.822-823
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• 2006

The compaction and sintering behavior of zirconium titanate $(ZrTiO_4)$ was investigated by means of the measurement of sintering density and shrinkage, and the observation of microstructure. With increasing the content of $Al_2O_3$ additive, $Al_2O_3$-modified zirconium titanate samples fired at $1300^{\circ}C$ showed the anisotropic shrinkage behavior that the upper region of sintered body has higher sintering shrinkage than the low region. This difference of sintering shrinkage decreased with increasing firing temperature from 1300 to $1400^{\circ}C$. The SEM micrographs of powder compation show that the anisotropic shrinkage behavior is related with non-uniform density in a uniaxial compaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.189.1-189.1
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• 2014

Lead zirconium titanate (PZT) is usually used as bulk and thin films. Due to high flexibility and piezoelectric, ferroelectric and pyroelectric properties, PZT fiber has attracted in a variety of fields such as sensor devices, non-electromechanical systems and non-volatile ferroelectric memory devices. And PZT fiber can be numerously synthesized and almost with the diameter of PZT fiber thicker than $10{\mu}m$. However, the electrospinnig method is cost effective and convenient. PZT obtained by electrospinning methodhas the diameter from sub-micro to nanometer. In this paper, the PZT/PVP nanofibers were synthesized with three precursors, lead nitrate, zirconium ethoxide and titanium isopropoxide. And the PZT nanofibers were fabricated after removal of PVP by annealing process at various temperature. The obtained PZT nanofibers were characterized by means of X-ray photoelectron spectroscopy (XPS) for chemical properties, X-ray diffraction (XRD) for crystallinity and phase, scanning electron microscopy (SEM) for morphologies. The diameter of PZT nanofibers were measured with SEM. From the SEM images, we confirmed that diameter of PZT nanofibers was hundreds of nanometers and decreased with increasing the annealing temperature. When the annealing temperature increased, the crystallinity of PZT nanofibers changed from pyrochlore to perovskite structure.

• Journal of the Korean Chemical Society
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• v.46 no.3
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• pp.242-251
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• 2002

We report the synthesis and characterization of the perovskite nanotubes made by sol-gel template syn-thesis.Both lead titanate (PbTiO3 : PT), lead zirconate (PbZrO3 : PZ) and lead zirconium titanate (PbZrO3 -PbTiO3 : PZT) solid solution nanotubes were prepared with a chelate sol-gel of titanium isopropoxide (Ti(OPri)4 ), zirconium tet-rabutoxide (Zr(OBu)4 ) and the respective lead acetate (Pb(OAc)2 -3H2O). WhatmanRanodisc membranes, with a 200nm pore size, served as the template. After the removal of the template in the 6M-NaOH, scanning electron microscopy shows that the shapes formed are 200 nm outer diameter tubes with 50mm lengths. Transmission electron microscopy and electron diffraction reveal that the tubes are polycrystalline. The PT nanotubes so far have shown an anomalous transition temperature, 234.4$^{\circ}C$ as measured by DSC with a small particle size, 15.4 nm determined by X-ray analysis with the aid of Scherrer's equation.

• Journal of Integrative Natural Science
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• v.7 no.3
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• pp.183-187
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• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1414-1416
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• 2001

Crack-free and homogeneous compact and epitaxial lead zirconate titanate(PZT) ferroelectric thin films with perovsikte structure have been prepared by sol-eel method. Tetrabutyl titanate, lead acetate and zirconium nitrate are used as raw materials. Glacial acetic acid is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of th thin films are 600~900$^{\circ}C$. The values of the remanent polarization Pr, and the coercive field $E_c$, of the PZT ceramic thin films are 46, 35 ${\mu}C/cm^2$ respectively.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.

• ETRI Journal
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• v.14 no.4
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• pp.210-216
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• 1992

불요 전자파 제거용 필터의 유전체로 사용되는 Zirconium Titanate 세라믹 유전체에서 $MoO_2$ 함유량과 소결온도에 변화를 주어 이들이 유전특성에 미치는 영향에 대하여 검토하였다. 일반적으로 $MoO_2$ 함유량보다는 소결온도의 변화가 유전률, 품질계수 및 소결밀도 등에 더 큰 영향을 주었으며, 정전용량의 온도계수 측면에서는 $MoO_2$ 함유량을 제어하여0ppm$^\{circ}C$근처로 이동시켜 상당히 안정된 온도 특성으로 개선할 수 있었다.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.