• Korean Chemical Engineering Research
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• 제45권4호
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• pp.378-383
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• 2007

Zirconium titanate($Zr_xTi_{1-x}O_2$)와 같은 다성분계 금속산화물의 박막을 형성함에 있어 비교적 저온에서 박막성분 간의 정확한 조성조절이 이루어지며 균일한 박막특성을 같게 하는 새로운 박막제조 공정방법을 제시하였다. 이 공정방법은 우선 다성분계 금속산화박막을 구성하는 단성분계 금속산화막들을 적층식구조로 형성하여 적절한 열처리로 고상확산 반응을 통한 단일상 다성분계 박막을 형성하는 것을 특징으로 한다. 본 연구에서는 단성분계 산화박막층을 형성하는 방법으로 나노두께의 박막을 형성할 수 있는 능력과 두께조절성이 우수한 PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) 법이 개발 적용하였다. PRTMOCVD 법으로 $ZrO_2$와 $TiO_2$ 단성분 산화막의 두께를 제어하면서 교차로 적층시킨 후 $850^{\circ}C$의 질소분위기에서 30분간 열처리를 통한 박막간의 상호확산을 통해 $Zr_xTi_{1-x}O_2$ 다성분계 산화박막을 형성하였다. 박막내의 Zr과 Ti의 조성은 $ZrO_2$와 $TiO_2$ 단성분 산화막의 두께로 조절하였다. 형성된 $Zr_xTi_{1-x}O_2$ 박막에 대한 상세한 물성을 분석하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.822-823
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• 2006

The compaction and sintering behavior of zirconium titanate $(ZrTiO_4)$ was investigated by means of the measurement of sintering density and shrinkage, and the observation of microstructure. With increasing the content of $Al_2O_3$ additive, $Al_2O_3$-modified zirconium titanate samples fired at $1300^{\circ}C$ showed the anisotropic shrinkage behavior that the upper region of sintered body has higher sintering shrinkage than the low region. This difference of sintering shrinkage decreased with increasing firing temperature from 1300 to $1400^{\circ}C$. The SEM micrographs of powder compation show that the anisotropic shrinkage behavior is related with non-uniform density in a uniaxial compaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.189.1-189.1
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• 2014

Lead zirconium titanate (PZT) is usually used as bulk and thin films. Due to high flexibility and piezoelectric, ferroelectric and pyroelectric properties, PZT fiber has attracted in a variety of fields such as sensor devices, non-electromechanical systems and non-volatile ferroelectric memory devices. And PZT fiber can be numerously synthesized and almost with the diameter of PZT fiber thicker than $10{\mu}m$. However, the electrospinnig method is cost effective and convenient. PZT obtained by electrospinning methodhas the diameter from sub-micro to nanometer. In this paper, the PZT/PVP nanofibers were synthesized with three precursors, lead nitrate, zirconium ethoxide and titanium isopropoxide. And the PZT nanofibers were fabricated after removal of PVP by annealing process at various temperature. The obtained PZT nanofibers were characterized by means of X-ray photoelectron spectroscopy (XPS) for chemical properties, X-ray diffraction (XRD) for crystallinity and phase, scanning electron microscopy (SEM) for morphologies. The diameter of PZT nanofibers were measured with SEM. From the SEM images, we confirmed that diameter of PZT nanofibers was hundreds of nanometers and decreased with increasing the annealing temperature. When the annealing temperature increased, the crystallinity of PZT nanofibers changed from pyrochlore to perovskite structure.

• 대한화학회지
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• 제46권3호
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• pp.242-251
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• 2002

졸-겔 형판 합성법을 이용하여 페로브스카이트 구조를 갖는 나노튜브를 합성하고 그 특성을 조사하였다. PbTiO3(PT), PbZrO3(PZ)와 PbZrO3-PbTiO3(PZT)고용체 나노튜부는 반응물, Ti(OPri)4, Zr(OBu)3와 Pb(OAc)2-3H2O 들의 킬레이트 졸-겔 합성법에 의해서 합성하였다. 산화 알루미늄 형판은 200nm의 직경을 갖는 훠트만 아노디스크가 사용되었다. 6.0M-NaOH 용액에서 형판을 제거한 다음, 주사현미경 분석에 의해서 50m 길이와 200nm 외곽 직경의 생성물 나노튜브를 확인할 수 있었다. 투과현미경 분석과 전자회절 분석에 의하여 나노튜브가 다결정임을 확인하였다. DSC 분석에 의하여 PT 나노튜브의 상전이 온도는 특이하게도 234.4$^{\circ}C$ 임이 확인되었으며, 이때의 입자크기는 X-선 분석의 하나인 Scherrer 식에 의해서 15.4nm 임이 계산되었다.

• 통합자연과학논문집
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• 제7권3호
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• pp.183-187
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• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1414-1416
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• 2001

Crack-free and homogeneous compact and epitaxial lead zirconate titanate(PZT) ferroelectric thin films with perovsikte structure have been prepared by sol-eel method. Tetrabutyl titanate, lead acetate and zirconium nitrate are used as raw materials. Glacial acetic acid is used as a catalyst. Ethylene glycol monoethyl ether is used as a solvent. The annealing temperatures of th thin films are 600~900$^{\circ}C$. The values of the remanent polarization Pr, and the coercive field $E_c$, of the PZT ceramic thin films are 46, 35 ${\mu}C/cm^2$ respectively.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.

• ETRI Journal
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• 제14권4호
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• pp.210-216
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• 1992

불요 전자파 제거용 필터의 유전체로 사용되는 Zirconium Titanate 세라믹 유전체에서 $MoO_2$ 함유량과 소결온도에 변화를 주어 이들이 유전특성에 미치는 영향에 대하여 검토하였다. 일반적으로 $MoO_2$ 함유량보다는 소결온도의 변화가 유전률, 품질계수 및 소결밀도 등에 더 큰 영향을 주었으며, 정전용량의 온도계수 측면에서는 $MoO_2$ 함유량을 제어하여0ppm$^\{circ}C$근처로 이동시켜 상당히 안정된 온도 특성으로 개선할 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.