• 한국결정성장학회지
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• 제22권5호
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• pp.247-253
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• 2012

본 연구에서는 zirconium diboride($ZrB_2$)의 소결성 향상을 위해 두 가지 전처리 공정을 사용하였다. 물리적 전처리 공정으로 SPEX mill을 사용하여 as-received $ZrB_2$ powder의 입도를 $2.61{\mu}m$에서 $0.35{\mu}m$까지 감소시킬 수 있었다. 화학적 전처리 공정으로 희석된 불산 용액을 사용하여 $ZrB_2$ powder의 산화도를 4.20 wt%에서 2.22 wt%까지 감소시킬 수 있었다. 소결된 $ZrB_2$의 상대 밀도는 입도와 산화도가 감소함에 따라 증가하였다. $ZrB_2$의 치밀화에는 산화도 보다 입도의 영향이 더 크다는 것을 확인하였다. 두 가지 전처리 공정을 통해 소결 조제의 사용 없이 치밀한 $ZrB_2$ 소결체를 제조하였다. 물리적 화학적 전처리 공정을 사용함으로써 $ZrB_2$의 소결성을 향상시킬 수 있었다.

• 한국세라믹학회지
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• 제34권11호
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• pp.1099-1106
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• 1997

In the present study, the effect of TiB2 addition on the sintering behavior of ZrB2 ceramics was studied with hot pressing under Ar atmosphere. Hot pressing experiments were carried out in graphite dies at the 1$700^{\circ}C$, 180$0^{\circ}C$ under Ar atmosphere. The sintering density increased with increasing TiB2 contents. With the addition of 10wt% TiB2 almost theoretical density could be achieved by hot-pressing at 180$0^{\circ}C$. Zr-Ti-Fe-B compound in liquid phase was observed from the EDS and WDS analysis. It was considered that sinterability was enhanced due to the mass transfer through liquid phase formed at the sintering temperature. In addition of TiB2, transition metal of groups IV, substitutional solid solution could be formed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.87-87
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• 2009

The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

• 한국재료학회지
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• 제9권8호
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• pp.787-791
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• 1999

기계적합금법으로 Ti와 B의 혼합분말로부터 $TiB_2$분말을 제조하였고, Zr과 Ta의 Ti 치환 효과를 조사하였다. (Ti+B)의 혼합분말을 280시간 분쇄하여 $TiB_2$단일상을 얻었고 기계적합금화 도중 비정질상은 관찰되지 않았다. Ti의 일부를 원자반경이 Ti보다 큰 Zr으로 치환한 결과 기계적합금화에 걸리는 시간이 크게 감소한 반면에, 붕화물 생성열이 절대값이 $TiB_2$상보다 작은 Ta로 치환하면 280시간 분쇄하여도 단일상을 형성하지 못하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• 한국재료학회지
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• 제20권4호
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• 한국세라믹학회지
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• 제49권4호
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• pp.308-317
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• 2012

Reactive processing, such as reactive hot pressing (RHP) and reactive spark plasma sintering (R-SPS), is effective densification method to prepare $ZrB_2$-based ultra high temperature ceramics (UHTCs). The present paper reviewed some typical reactive processing of $ZrB_2$-based UHTCs. All the reactions from the starting materials in the reactive processing are thermodynamically favorable, which generate enough energy and driving force for the densification of the final products under a relatively low temperature. Besides, compared with non-reactive processing, anisotropic $ZrB_2$ grains, such as $ZrB_2$ platelets, can only be obtained in the reactive processing, resulting in an improvement of the mechanical properties.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1474-1480
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• 2013

Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.105-105
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. $SiC-ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in vacuum or argon gas atmosphere. The relative density of SiC+40[vol.%]$ZrB_2$ composites reveal high 99.57[%] in argon gas atmosphere and pressure 50MPa.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1449-1450
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol.%) mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS) under argon atmosphere at 50MPa(P50) and 60MPa(P60) pressure. The relative density, 94.13% of P60 sample was lower than that, 94.75% of P50 sample. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The trend of flexural strength of SiC-$ZrB_2$ composites were in accordance with the relative density. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance in the temperature range from $25^{\circ}C$ to $500^{\circ}C$, and electrical resistivity of P50 and P60 sample were $6.75{\times}10^{-4}$ and $7.22{\times}10^{-4}{\Omega}{\cdot}cm$ at room temperature, respectively.