• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.198-203
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• 2016

We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

• Korean journal of food and cookery science
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• v.20 no.2
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• pp.119-125
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• 2004

Effects of various chemical additives and heat treatments were investigated on the wheat flour doughs and breads. Ammonium ferric citrate, Ca-citrate, CaCl$_2$, FeSO$_4$, MgCl$_2$and ZnO were mixed respectively to the flour up to 0.1% of flour dry weight basis. Ammonium ferric citrate and ferric sulfate showed no significant effects on the dough properties and magnesium sulfate, calcium chloride and zinc oxide increased elastic properties and optimum dough mixing time. However, calcium citrate and magnesium chloride showed no significant effects on the dough mixing properties. Most of chemicals were detrimental on the bread volume except MgSO$_4$ and CaCl$_2$. Breads with MgSO$_4$ and CaCl$_2$ retained the equal or slightly higher volume compared to control bread. Crumb and crust colors of breads with addition of chemicals were changed to lighter than that of control bread. L values both of crumb and crust increased with addition of chemicals except Ca-citrate. To inactivate the endogenous enzymes of flour, flour was roasted under electric oven, exposed to UV and microwave. Those heat treatments of flour increased dough stability and produced no dough breakdown after optimum mixing time. However, bread volume of heat-treated flour decreased.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.239-244
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• 2017

We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1690-1691
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• 2011

본 논문에서는 H1N1 인플루엔자 A 바이러스(influenza A H1N1 virus) 검출을 위한 산화아연 나노구조(zinc oxide nano structure) 기반의 전기화학적 면역센서를 제작하고 그 특성을 분석하였다. H1N1 인플루엔자 A 바이러스는 빠른 전파 속도 때문에 정확하고 빠른 검출이 필요하다. 먼저, 2 $mm^2$의 표면적을 갖는 패턴된 금 전극 위에 열수방식(hydrothermal method)으로 성장시킨 산화아연 나노구조가 선택적으로 형성되도록 리프트-오프(lift-off) 방법을 사용하였다. 0.01 M phosphate buffered saline(pH 7.4)에서 2 ${\mu}g$/mL 농도의 1차 항체를 정전기력에 의해 산화아연 나노구조에 고정화한 후, 10 pg/mL ~ 5ng/mL 농도의 H1N1 항원을 적용하여 포획 항체에 결합시키고 HRP(horseradish peroxidase) 효소가 결합된 검출 항체를 항원에 결합시키는 샌드위치 ELISA법을 이용하였다. HRP와 반응하는 TMB(3,3', 5,5'-tetramethylbenzidine)와 과산화수소가 포함된 acetate buffered 용액(pH 5)을 전해질로 사용하고 순환전압전류 측정법(cyclic voltammetry)으로 센서의 특성을 분석하였다. 측정된 순환전압전류그래프(cyclic voltammogram)에서 H1N1 항원 농도 10 pg/mL ~ 5 ng/mL의 응답 전류는 276.47 ${\pm}$ 21.72 nA (평균 ${\pm}$ 표준편차, n=4) ~ 478.89 ${\pm}$ 6.21 nA로 측정되었고, logarithmic하게 증가하는 응답 전류 특성을 보였다.

• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.508-513
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• 2015

A capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and transparent bridge structures was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be exposed enough to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies the technological clue for ensuring long-term reliability to the highly flexible and transparent TSP made by using conventional fabrication processes.

• Journal of Microbiology and Biotechnology
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• v.24 no.1
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• pp.87-96
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• 2014

In the present study, a yeast species isolated from CETP, Vellore, Tamilnadu was identified as Cryptococcus sp. VITGBN2 based on molecular techniques and was found to be a potent producer of acidic diacetate sophorolipid in mineral salt media containing vegetable oil as additional carbon source. The chemical structure of the purified biosurfactant was identified as acidic diacetate sophorolipid through GC-MS analysis. This sophorolipid was used as a stabilizer for synthesis of zinc oxide nanoparticles (ZON). The formation of biofunctionalized ZON was characterized using UV-visible spectroscopy, XRD, scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy. The antimicrobial activities of naked ZON and sophorolipid functionalized ZON were tested based on the diameter of inhibition zone in agar well diffusion assay, microbial growth rate determination, protein leakage analysis, and lactate dehydrogenase assay. Bacterial pathogen Salmonella enterica and fungal pathogen Candida albicans showed more sensitivity to sophorolipid biofunctionalized ZON compared with naked ZON. Among the two pathogens, S. enterica showed higher sensitivity towards sophorolipid biofunctionalized ZON. SEM analysis showed that cell damage occurred through cell elongation in the case of S. enterica, whereas cell rupture was found to occur predominantly in the case of C. albicans. This is the first report on the dual role of yeast-mediated sophorolipid used as a biostabilizer for ZON synthesis as well as a novel functionalizing agent showing antimicrobial property.

• Korean Journal of Soil Science and Fertilizer
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• v.36 no.5
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• pp.323-332
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• 2003

This study was carried out to provide information for the present status of soil pollution near abandoned old-zinc mining area through analysis of bound form and 0.1 N-HCl extractable concentrations of heavy metals in soils and plants. Feasibility of endemic plants for phytoremediation was evaluated by the investigation of vegetation in soils. Cd contents of the selected samples near old-zinc mining soils ranged from 0.2 to $42mg\;kg^{-1}$. Nonagricultural soils near the mining area contained great amounts of Zn, Pb, Cd, and Cu than the paddy and upland soils. Some Korean wild plants, Artemisia princeps, Artemisia montana, Erigeron canadensis, and Pueraria thunbergiana, were found to grow vigorously in the studied area. Among them, Artemisia princeps was selected as a possible phytoremediator for cleaning heavy metal contaminated soils. Artemisia princeps contained about 43 and $52mg\;kg^{-1}$ of Cd in their root and shoot as dry weight, respectively. Average contents of Cd in the rhizosphere soil, $15.68mg\;kg^{-1}$, was slightly higher than the soil-root interface soils, $14.1mg\;kg^{-1}$. Sequential extraction of Cd contaminated soils showed that average $2.4mg\;kg^{-1}$ (about 7%) of cadmium existed as exchangeable form and the average amounts increased as follows : adsorbed < organically bound < exchangeable << oxide carbonate << sulfide residual fractions. Amendment of organic by-product fertilizer in metal-contaminated soils promoted the growth of roots significantly as compared with the other treatments containing chemical fertilizer.