• Journal of the Korean earth science society
• /
• v.23 no.1
• /
• pp.52-58
• /
• 2002

A colorless and transparent zirconium oxide ($Zr_{0.73}Y_{0.27}O_{1.87}$) crystal has been synthesized by the Bridgman-Stockbager method. The gem-quality material is produced by adding 20${\sim}$25 wt.% $Y_2O_3$ (stabilizer) and 0.04 wt.% $Nd_2O_3$ (decolorising agent) to the $ZrO_2$ powder. It shows a vitreous luster with a slight oily appearance. Under a polarizing microscope, it shows isotropic nature with no appreciable anisotropism. Mohs hardness value and specific gravity is measured to be 8${\sim}$$8{\frac{1}{2}}$ and 5.85, respectively. Under ultraviolet light it shows a faint white glow. The crystal structure of yttria-stabilized zirconia with 0.27 at.% Y has been re-investigated, using single crystal X-ray diffraction, and confirmed to be a cubic symmetry, space group $Fm{\overline{3}}m$ ($O^5_h$) with a=5.1552(5) ${{\AA}}$, V=136.99(5) ${{\AA}}^3$, Z=4. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of ${\Delta}/a{\sim}$0.033 and 0.11 along <110> and <111> from the ideal positions of the fluorite structure, respectively.

• Journal of the Korean Ceramic Society
• /
• v.33 no.1
• /
• pp.25-34
• /
• 1996

Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates which were fabricated by different substrate thickness and porosity. Film growth rates decreased with increase on the substrate thickness and porosity and obeyed a parabolic rate law. Activa-tion energy calculated from the parabolic rate onstants was 69.9 kcal/mol. With increase on the deposition time, monoclinic phase was appeared and then disappeared. YSZ penetrated deeply into substrates when the EVD temperature decreased. Electrical conductivity of the films was 0.09 S/cm at 100$0^{\circ}C$ similar to the value of YSZ single crystal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.7
• /
• pp.1211-1217
• /
• 2000

The three-dimensional finite-difference time-domain (FDTD) method and the two-dimensional quasi-static formulation have been used to calculate the characteristic impedance and the microwave effective index of coplanar waveguide structures on Lithium Niobate ($LiNBO_3$) single crystal substrates with a yttria-stabilized zirconia (YSZ) or $SiO_2$ buffer layer. The results shown can be a good source to predict the modulator characteristics. The effects of the thin buffer layer and anisotropy of the $LiNBO_3$ crystal (x-cut and z-cut) are discussed. The comparison between the FDTD and quasi-static results shows good agreement. In this paper, the efficient modeling technique of the FDTD method for the coplanar waveguide (CPW) structures based on an anisotropic substrate with a thin buffer layer is developed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.02a
• /
• pp.129-132
• /
• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.2
• /
• pp.73-77
• /
• 2012

Co-(0.8 wt%) and Ce-(0.4 wt%) doped cubic zirconia ($ZrO_2$ : $Y_2O_3$ = 80 : 20, 70 : 30, 60 : 40, 50 : 50 wt%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1000^{\circ}C$ for 5 hrs. The orange, yellowish brown and brown colored as-grown single crystals were changed into either brownish red, yellow and green color after the heat treatment. Before and after the heat treatment, the YSZ (yttria-stabilized zirconia) single crystals were cut for wafer form (${\phi}6.5mm{\times}t2mm$). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2,7/2}(4f){\rightarrow}^2T_g(5d^1))$, $Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.

• Journal of the Korean Magnetics Society
• /
• v.12 no.2
• /
• pp.41-45
• /
• 2002

The low-field tunnel-type magnetoresistance (MR) properties of sol-gel derived $La_{0.7}Pb_{0.3}MnO_3(LPMO)$ thin film deposited on different substrate have been investigated. Polycrystalline thin films were fabricated by spin-coating on $SiO_2/Si(100)$ substrate and that with yttria-stabilized zirconia (YSZ) buffer layer, while c-axis-oriented thim film was grown on $LaAlO_3(001)$ (LAO) single crystal substrate. The full width half maximum (FWHM) of the rocking curve scan of LPMO/LAO film is $0.32^{\circ}$. Tunnel-type MR ratio is 0.52 % in $LPMO/SiO_2/Si$(100) film and that of $LPMO/YSZ/SiO_2/Si$(100) film is as high as 0.68 %, whereas that of LPMO/LAO(001) film is less than 0.4 % under the applied field of 500 Oe at 300 K. Well-pronounced MR hysteresis was registered with an MR peak in the vicinity of the coercive field. The low-field tunnel-type MR characteristics of thin films deposited on different substrates originates from the behavior of grain boundary properties.