• Journal of the Korean Ceramic Society
• /
• v.45 no.11
• /
• pp.658-661
• /
• 2008

Deep red color emitting $YVO_4:Eu^{3+}$ phosphors were investigated in an attempt to achieve promising performances in cold cathode fluorescent lamp (CCFL) applications. For this purpose, several additives such as LiF, $Li_2CO_3$ and $HBO_3$ were introduced in the processing. While two of the additives were ineffective, the inclusion of $LiCO_3$ during the solid state synthesis of $YVO_4:Eu^{3+}$ phosphors was proven to enhance photoluminescent intensity and the color chromaticity. Unlike the commercially available $YVO_4:Eu^{3+}$ red phosphor for use in PDP applications, pure $YVO_4:Eu^{3+}$ excluding phosphorous was shown to be favorable for CCFL applications, improving color chromaticity at 254nm excitations.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1547-1550
• /
• 2007

$YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1017-1020
• /
• 2003

The effect of doping Gd, La for Y into $YVO_{4}:Eu^{3+}$ red phosphor on its photoluminescence(PL) intensity has been investigated. $YVO_{4}:$Eu-based phosphors were prepared by solid-state reaction at temperature above $1200^{\circ}C$. Under UV excitation(254, 365 nm), it was measured that $YVO_{4}:Eu^{3+}$ was superior to a commercial red phosphor (Y,Gd)$BO_{3}:Eu^{3+}$ in terms of PL intensity and CIE color coordinates. When La, Gd were doped into $YVO_{4}:Eu^{3+}$, the change in the structure of the host material was observed. In result, when the ($Y{1_x}La_{x})VO_{4}:Eu^{3+}$ phosphors were excited by 365 nm excitation, its PL intensity was improved up to about 30 % for the case of x being $0.4{\sim}0.6$.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.12
• /
• pp.1859-1862
• /
• 2004

Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.169-173
• /
• 2008

$Eu^{3+}$ and $Bi^{3+}$ co-doped $YVO_4$ phosphors were produced by a microwave heating process. When the microwave heating method was synthesized,. the particle size was very small and the particles tended to agglomerate. However, as the heating time increased, the particle size increased and the agglomeration decreased. The emission spectrum exhibited a weak band for $^5D_0{\longrightarrow}^7F_1$ at 594.91 and 602.3 nm and strong sharp peaks at 616.7 and 620.0 nm due to the $^5D_0{\longrightarrow}^7F_2$ transition of $Eu^{3+}$. Microwave heating synthesis can provide a product without long time heating as well as good homogeneous distribution of activators.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.8
• /
• pp.921-924
• /
• 2001

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.330-331
• /
• 2011

희토류 이온이 첨가된 형광체는 조명, 정보 디스플레이, 태양 에너지 변환 소자에 응용 가능하기 때문에 상당한 주목을 받고 있다. 특히, 결정 입자의 형상과 크기는 산업체 응용에 있어서 중요한 변수 중의 하나이다. 구형의 형광체 입자는 형광층의 광학 및 기하학적 구조를 최적화 시킬 수 있고, 결정 입자의 크기는 양질의 코팅을 위해 필요한 결정 입자의 양에 영향을 미친다. 본 연구에서는, $YVO_4$ 모체 결정에 Eu 이온의 농도를 선택적으로 주입하여 발광 효율이 높은 적색 형광체를 합성하고자 한다. 형광체 분말 시료는 활성체인 Eu의 함량을 0.00, 0.05, 0.10, 0.15, 0.20 mol로 변화시키면서 고상 반응법을 사용하여 합성하였다. 볼밀링 작업을 수행한 후에, 60$^{\circ}C$에서 20시간 건조하였고, 잘게 갈아서 체로 걸러낸 다음에 세라믹 도가니에 넣고 전기로에서 서서히 온도를 승온시켜 500$^{\circ}C$에서 10시간 동안 하소를 실시한 후에 1,100$^{\circ}C$에서 5시간 동안 소결하였다. Eu 이온의 함량비를 변화시켜 합성한 $YVO_4$ : Eu 형광체 분말 시료의 발광 세기의 변화, 결정 구조와 표면 형상을 각각 PL과 PLE, XRD, FE-SEM 장치를 사용하여 측정한 결과들을 종합해 볼 때, Eu 이온의 비가 0.15 mol일때 발광 세기가 최대값을 나타냄을 알 수 있었으며, 더욱 Eu의 함량을 증가시키자 농도 억제 현상에 의하여 발광 세기는 급격히 감소함을 보였다. SEM으로 촬영한 결정 입자의 형상의 경우에, Eu 이온의 함량비가 증가함에 따라 결정 입자들이 더욱 조밀하게 구형에 가까운 형상을 나타냄을 관측할 수 있었다(Fig. 1). 형광체 분말의 형광 스펙트럼의 경우에, 619 nm에 주 피크를 갖는 적색 형광 스펙트럼들이 관측되었으며, Eu 이온의 함량비에 따라 형광 세기는 상당한 의존성을 나타내었다(Fig. 2). Eu 함량에 따른 결정입자의 크기, 형광 세기와 회절 피크의 반치폭 사이의 상관 관계를 제시하고자 한다.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.8
• /
• pp.2368-2370
• /
• 2010

• Bulletin of the Korean Chemical Society
• /
• v.32 no.1
• /
• pp.335-337
• /
• 2011

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.177.2-177
• /
• 2003