• Journal of the Korean Society of Radiology
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• v.9 no.3
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• pp.169-174
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• 2015

$LiGd_9(SiO_4)_6O_2:Ce^{3+}$ phosphors were synthesized by solid-state reaction method. The structural characteristic was investigated by X-ray powder diffraction analysis. The emission and excitation spectra of the $Ce^{3+}$ ions doped $LiGd_9(SiO_4)_6O_2$ phosphors were obtained under the UV excitation. The emission spectra of $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ shows the band at 410 nm corresponding to the $^2F_{5/2}$ and $^2F_{7/2}$ states of $Ce^{3+}$. The red shift of $Ce^{3+}$ emission is found as the $Ce^{3+}$ concentration increases, which could be explained by the change in crystal-field symmetry and strength with increasing $Ce^{3+}$ concentration. Fluorescence decay time of $Ce^{3+}$ was about 20 ns. When the concentration of $Ce^{3+}$ increases life time was slightly reduced.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.4
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• pp.754-759
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• 2007

Field emission displays (FED) are currently being explored as a potential flat panel display technology. Specifically, the optimization pf efficient bin emitting phosphors in the $Y_2O_3-Nb_2O_5$ system and influence of particle size of phosphors on the luminescent properties was studied. Under 254 nm excitation, Bi activated $YNbO_4$ phosphors showed a strong and relatively narrow blue omission band, peaking at about 420-450 nm. Especially 0.4 wt% Bi doped yttrium phosphors showed the maximum emission intensity which is almost three times as much as that of $Y_2SiO_5:Ce$ phosphors. Finally, Ce doped $Y_2SiO_5$ phosphors exhibited strong and broad blue emission band, centered at 390-420 nm and maximum emission intensity at the doping concentration of 0.02-0.03 mol.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.414-417
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• 2012

The effect of cerium concentration and the addition of $Sb_2O_3$ on the light emission of cerium-contained glass were investigated. The glass matrix composition was $20Y_2O_3-25Al_2O_3-55SiO_2$, the $CeO_2$ concentration ranged from 0.05 to 0.5 mol%, and $Sb_2O_3$ was added at concentrations of 0.02 to 0.1 mol%. The $Ce^{3+}$ and $Ce^{4+}$ absorption bands were observed at approximately 330 nm and 240 nm, respectively. A broad emission band at 400 nm, due to the 4f-5d transition of the $Ce^{3+}$ ion, was observed under illumination by a UV light at 330 nm. The photoluminescence intensity of $Ce^{3+}$ had a maximum value at a $CeO_2$ concentration of 0.1 mol%. Adding $Sb_2O_3$ decreased the $Ce^{4+}$ absorption intensity and enhanced the light emission intensity of $Ce^{3+}$ by about 45%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.121-126
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• 2015

A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.480-486
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• 2006

Generally, IR cut-off filters for mobile phone is coated on the glass substrate at high temperature(above $300^{\circ}C$). In this work, we prepared IR cut-off filters on the poly(methyl methacrylate)(PMMA) substrates at low temperature(about $70^{\circ}C$ ). using the $CeO_2\;and\;SiO_2$ coatings by physical vapor deposition. The surface energies of coated and uncoated PMMA, and adhesive properties of IR cut-off filters coatings were examined using contact angle measurements. We demonstrate the improve of mobile phone optical system using these results.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.12
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• pp.668-673
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• 2015

Alumina-based catalysts with different Ce loadings were studied in the decomposition of $CF_4$ using microwave heating system. Heating material of microwave system used Silicon Carbide. The crystallographic phases of catalysts were investigated by XRD and decomposition rates of $CF_4$ were examined by GC-TCD. The catalysts of 10 wt% Ce modified $Al_2O_3$ showed higher $CF_4$ decomposition rate than un-modified $Al_2O_3$ for $500^{\circ}C$ reaction temperature. The k value of catalysts shows the order of $Ce(20)/Al_2O_3=Ce(0)/Al_2O_3<Ce(5)/Al_2O_3<Ce(10)/Al_2O_3$. XRD patterns of $Ce(0)/Al_2O_3$ were no difference before and after the reaction and showed $Al_2O_3$ phases. With the increase in Ce loadings, $CeO_2$, $AlF_3$ of XRD peaks was observed. The results was indicated that Ce modifed $Al_2O_3$ than un-modifed $Al_2O_3$ was decreased reaction temperature to $200^{\circ}C$ with same decomposition rate. Also the appropriated cerium sulfate loadings on $Al_2O_3$ were 5~10 wt%.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.180-184
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• 2003

Ce-doped $Y_2$SiO$_{5}$ phosphor particles of spherical morphology, fine size, high crystallinity and high photoluminescence (PL) intensity were prepared by spray pyrolysis. When nitrate precursor solution is adopted, hollow particles were formed by uneven drying rate between surface and inside of droplet. Citric acid and ethylene glycol were introduced as polymeric precursor to control the morphology of particles. When polymeric solution is adopted, polymeric chain is formed by the esterification reaction between carboxyl and hydroxy groups of citric acid and ethylene glycol, and considered as controlling the drying characteristics of droplet. $Y_2$$SiO_{5}$ :Ce phosphor particles prepared from polymeric precursor solution were spherical, filled, fine size and not agglomerate before and after post heat treatment. The optimum doping concentration of cerium was 0.5 mol% of overall solution concentration. The optimum amount of TBOS of high PL intensity and pure crystallinity of X2-type $Y_2$$SiO _{5}$ was 105% of stoichiometric amount. The PL intensity of $Y_2$X$/_{5}$ :Ce phosphor particles prepared using the polymeric precursor solution was 164% of that of the nitrate precursor solution due to homogeneous composition and good morphology.y.