• Title/Summary/Keyword: Y-capacitors

Search Result 1,424, Processing Time 0.026 seconds

A Review on IPP/Elastomer/Nanofiller Composites for the Possibility of Use as Power Cable Insulations (동일배열 폴리프로필렌/엘라스토머/나노충전제 복합체의 전력케이블 절연체로서의 사용 가능성에 대한 문헌적 고찰)

  • Pyun, Sun-Ho
    • Journal of the Korean Applied Science and Technology
    • /
    • v.29 no.2
    • /
    • pp.184-192
    • /
    • 2012
  • For use as recyclable power cable insulations without dielectric oil, technology trends of IPP based thermoplastic polyolefin elastomer(TPO) nanocomposites were reviewed. In 2010 research results of IPP nanocomposite dielectrics for power capacitors showed promising high voltage properties except dielectric loss. Research of IPP based TPO nanocomposites for automotive exterior parts revealed considerable improvements of mechanical properties including impact strength, especially minimization of compatibilizer content, the origin of dielectric loss. A study on electrical properties of IPP based TPO nanocomposites containing a few weight percent of nanofillers for power cable insulations is suggested.

Effects of Chamber Pressure on Dielectric Properties of Sputtered MgTiO3 Films for Multilayer Ceramic Capacitors

  • Park, Sang-Shik
    • Korean Journal of Materials Research
    • /
    • v.20 no.7
    • /
    • pp.374-378
    • /
    • 2010
  • $MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

Investigation on manufacturing and electrical properties of$Ba_{0.5}Sr_{0.5}TiO_3$thin film capacitors using RE Magnetron Sputtering (RF Magnetron Sputtering을 이용한 $Ba_{0.5}Sr_{0.5}TiO_3$박막 커패시터의 제작과 전기적 특성에 관한 연구)

  • 이태일;박인철;김홍배
    • Journal of the Korean Vacuum Society
    • /
    • v.11 no.1
    • /
    • pp.1-7
    • /
    • 2002
  • We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

Power Fluctuation Reduction of Pitch-Regulated MW-Class PMSG based WTG System by Controlling Kinetic Energy

  • Howlader, Abdul Motin;Urasaki, Naomitsu;Yona, Atsushi;Senjyu, Tomonobu;Saber, Ahmed Yousuf
    • Journal of international Conference on Electrical Machines and Systems
    • /
    • v.1 no.2
    • /
    • pp.116-124
    • /
    • 2012
  • Wind is an abundant source of natural energy which can be utilized to generate power. Wind velocity does not remain constant, and as a result the output power of wind turbine generators (WTGs) fluctuates. To reduce the fluctuation, different approaches are already being proposed, such as energy storage devices, electric double layer capacitors, flywheels, and so on. These methods are effective but require a significant extra cost to installation and maintenance. This paper proposes to reduce output power fluctuation by controlling kinetic energy of a WTG system. A MW-class pitch-regulated permanent magnet synchronous generator (PMSG) is introduced to apply a power fluctuation reducing method. The major advantage of this proposed method is that, an additional energy storage system is not required to control the power fluctuation. Additionally, the proposed method can mitigate shaft stress of a WTG system. Which is reflected in an enhanced reliability of the wind turbine. Moreover, the proposed method can be changed to the maximum power point tracking (MPPT) control method by adjusting an averaging time. The proposed power smoothing control is compared with the MPPT control method and verified by using the MATLAB SIMULINK environment.

A 13-Gbps Low-swing Low-power Near-ground Signaling Transceiver (13-Gbps 저스윙 저전력 니어-그라운드 시그널링 트랜시버)

  • Ku, Jahyun;Bae, Bongho;Kim, Jongsun
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.51 no.4
    • /
    • pp.49-58
    • /
    • 2014
  • A low-swing differential near-ground signaling (NGS) transceiver for low-power high-speed mobile I/O interface is presented. The proposed transmitter adopts an on-chip regulated programmable-swing voltage-mode driver and a pre-driver with asymmetric rising/falling time. The proposed receiver utilizes a new multiple gain-path differential amplifier with feed-forward capacitors that boost high-frequency gain. Also, the receiver incorporates a new adaptive bias generator to compensate the input common-mode variation due to the variable output swing of the transmitter and to minimize the current mismatch of the receiver's input stage amplifier. The use of the new simple and effective impedance matching techniques applied in the transmitter and receiver results in good signal integrity and high power efficiency. The proposed transceiver designed in a 65-nm CMOS technology achieves a data rate of 13 Gbps/channel and 0.3 pJ/bit (= 0.3 mW/Gbps) high power efficiency over a 10 cm FR4 printed circuit board.

Input Ripple Current Formula Analysis of Multi-Stage Interleaved Boost Converter (다단 인터리브드 부스트 컨버터의 입력리플전류 수식 분석)

  • Jung, Yong-Chae
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.6 no.6
    • /
    • pp.865-871
    • /
    • 2011
  • DC-DC converter commonly used in photovoltaic systems or fuel cell systems is a boost converter. Among several types of boost converter, the interleaved boost converter with small input and output current ripples is widely used in recent years. Because of small input and output current ripples, the circuit can reduce the size of the input and output capacitors. Thus, instead of conventional electrolytic capacitor, the film capacitor with high reliability can be used and this is the life and reliability of the entire system can be improved. In this paper, the input/output current ripple formulas of the multi-stage interleaved boost converter are derived, and the characteristics in accordance with duty are found out. In order to verify the above mentioned contents, the derived results will make a comparison with the calculated values by using PSIM tool.

Development of Fully Integrated Broadband MMIC Chip Set Employing CSP(Chip Size Package) for K/Ka Band Applications (CSP(Chip Size Package)를 이용한 완전집적화 K/Ka 밴드 광대역 MMIC Chip Set 개발)

  • Yun Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.16 no.1 s.92
    • /
    • pp.102-112
    • /
    • 2005
  • In this work, we developed fully integrated broadband MMIC chip set employing CSP(Chip Size Package) for K/Ka band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. $STO(SrTi_{3})$ capacitors were employed to integrate the DC biasing components on the MMIC, and LC parallel circuits were employed for DC feed and ESD protection. A pre-matching technique and RC parallel circuit were used to achieve a broadband matching and good stability fer the amplifier MMIC in K/Ka band. The amplifier CSP MMIC exhibited good RF performance over a wide frequency range in K/Ka band. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the K/Ka band.

Annelaing Effects on the Dielectric Properties of the (Ba, Sr) $TiO_3$Films on $RuO_2$Bottom Electrodes

  • Park, Young-Chul;Lee, Joon;Lee, Byung-Soo
    • The Korean Journal of Ceramics
    • /
    • v.3 no.4
    • /
    • pp.274-278
    • /
    • 1997
  • (Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

  • PDF

A Study on the Reduction of high frequency leakage current in PWM inverter fed Induction Motor (PWM 인버터로 구동된 유도전동기의 누설전류 억제에 관한 연구(II) -능동형 커먼 모드 전압 감쇄기를 이용한 고주파 누설전류 억제-)

  • 성병모;류도형;박성준;김철우
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.5 no.5
    • /
    • pp.443-450
    • /
    • 2000
  • A PWM inverter for an induction motor often has a problem with a high frequency leakage current that flows through stray capacitors between stator windings and a motor frame to ground. This paper proposes a new type of Active Common Mode Voltage Canceler circuit for the reduction of common mode voltage and high frequency leakage current generated by the PWM VSI-fed induction motor drives. The compensating voltage applied by the common made voltage canceler has the same amplitude as, hut the opposite polarity to, the common mode voltage by PWM Inverter. Therefore, common mode voltage and high frequency leakage current can be canceled. The proposed circuit consists of four-level half-bridge inverter and common-mode transformer. Simulated and experimental results show that common mode voltage canceler makes significant contributions to reducing a high frequency leakage current.

  • PDF

Design of Programmable SC Filter (프로그램 가능한 SC Filter의 설계)

  • 이병수;이종악
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.11 no.3
    • /
    • pp.172-178
    • /
    • 1986
  • The recent interest in the design of filters is motivatied by the fact that such filter can be fully integrated using standard metal-oxide-semiconductor processing technology. This is due to replacing all the resistors in the active RC filter network by the switched capacitors. The voltage gain of a SC filter depends only on the rations of capacitance and these ratios can be obtained and maintained to high accuracy. Therefore, it is known that a switched capacitor is much better than a resistor in temperature and linearity characteristics. This paper proposed a programmable SC filter and proved the fact that ${omega}_0$ Q and G of this circuit can be controlled by digital signal. Experiments show that SC filter remains the low sensitivities but it can't avoid little influence of parasitic capacitance. As the transfer characteristic of the SC filter is varied with sampling frequency and resistor array, SC filtering technigue can be applied for digital processing, speech analysis and synthesis and so on.

  • PDF