• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.339-339
• /
• 2007

Metal coating on ceramic powder has long been attracting interest for various applications such as superconductor where the brittle nature of high temperature ceramic superconductor was complemented by silver coating and metalloceramics where mechanical property improvement was achieved via electroless plating. More recently it has become of great interest in embedded passive device applications since metal coating on ceramic particles may result in the enhancement of the dielectric properties of ceramic-polymer composite capacitors. In our study, nickel ion-containing solution was used for coating commercial capacitor-grade $BaTiO_3$ powder. After filtering process, the powder was dried and heat-treated in 5% forming gas at $900^{\circ}C$. XRD and TEM were utilized for the observation of crystallization behavior and morphology of the particles. It was found that the nickel coating characteristics were strongly dependent on the several parameters and processing variables, such as starting $BaTiO_3$ particle size, nickel source, solution chemistry, coating temperature and time. In this paper, the effects of these variables on the coating characteristics will be presented in some detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.100-100
• /
• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.207.1-207.1
• /
• 2013

Tantalum oxide has been extensively investigated as one of the promising Resistive switching materials applicable to Resistive Dynamic Access Memories. Impedance spectroscopy offers simultaneous measurements of electrical and dielectric information, separation of electrical origins among bulk, grain boundaries, and interfaces, and the monitoring of electrical components. Such benefits have been combined with the resistive states of resistive switching devices which can be described in terms of equivalent circuits involving resistors, capacitors, and inductors, The current work employed pulsed laser deposition in order to prepare the oxygen-deficient tantalum oxide. The fabricated devices were controlled between highresistance and low-resistance states in controlled current compliance modes. The corresponding electrical phenomena were monitored both in the dc-based current-voltage characteristics and in the ac-based impedance spectroscopy. The origins of the electrical switching are discussed towards optimized ReRAM devices in terms of interfacial effects.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.144.2-144.2
• /
• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• Korean Journal of Materials Research
• /
• v.18 no.10
• /
• pp.542-546
• /
• 2008

$BaTiO_3$/epoxy composites can be applied as the dielectric materials for embedded capacitors. The effects of the degree of $BaTiO_3$ particle agglomeration on the dielectric properties of $BaTiO_3$/epoxy composites were investigated in the present study. The degree of particle agglomeration was controlled by the milling of the agglomerated particles. The size and content of the agglomerated $BaTiO_3$ particles decreased with an increase in the milling time. The dielectric constants and polarizations of $BaTiO_3$/epoxy composites abruptly decreased with the increase of the milling time. It was concluded that the dielectric constants and polarizations of $BaTiO_3$/epoxy composites decreased as the degree of particle agglomeration decreased. The degree of agglomeration of $BaTiO_3$ particles turned out to be a very influential factor on the dielectric properties of $BaTiO_3$/epoxy composites.

• Journal of the Korean Society of Industry Convergence
• /
• v.20 no.2
• /
• pp.115-124
• /
• 2017

This paper aims to develop an SMPS topology for handling a high range of input voltages based on a DC-DC flyback converter circuit. For this purpose, 2 capacitors of the same specifications were serially connected on the input terminal side, with a flyback converter of the same circuit configuration serially connected to each of them, so as to achieve high input voltage and an effect of dividing input voltage. The serially connected flyback converters have the transformer turn ratio of 1:1, so that each coil is used for the winding of a single transformer, which is a characteristic of doubly-fed configuration and enables the correction of input capacitor voltage imbalance. In addition, a pulse transformer was designed and fabricated in a way that can achieve the isolation and noise robustness of the PWM output signal of the PWM controller that applies gate voltage to individual flyback converter switches. PSIM simulation was carried out to verify such a structure and confirm its feasibility, and a 100W class stack was fabricated and used to verify the feasibility of the proposed high voltage SMPS topology.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.3
• /
• pp.649-657
• /
• 2008

This paper describes the optimized output performances such as output power and the third order intermodulation in GaN high power transistor packages which consist of chip die, chip capacitors, and wire bonding. The optimized output power according to wire bonding techniques, and third order intermodulation performances according to wire bonding and bias conditions are discussed. In addition, it is shown through the nonlinear simulation that how the output performances are sensitive to the inductance values which are realized by wire bonding for matching network in the limited package area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.693-696
• /
• 2004

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.

• Proceedings of the KSR Conference
• /
• 1999.11a
• /
• pp.318-325
• /
• 1999

Modern AC electric car has PWM(Pulse Width Modulation)-controlled converters, which give rise to higher harmonics. The current harmonics injected from AC electric car is propagated through power feeding circuit, As the feeding circuit is a distributed constant circuit composed of RLC, the capacitance of the feeding circuit and the inductance on the side of power system cause a parallel resonance and a magnification of current harmonics at a specific frequency. The magnified current harmonics usually brings about various problems. That is, the current harmonics makes interference in the adjacent lines of communications and the railway signalling system. Furthermore, in case it flows on the side of power system, not only overheating and vibration at the power capacitors but also wrong operation at the protective devices can occur. Therefore, the exact assessment of the harmonic current flow must be undertaken at design and planning stage for the electric traction systems. From these point of view, this study presents an approach to model and to analyse traction power feeding system focused on the amplification of harmonic current The proposed algorithm is applied to a standard AT(Auto-transformer)-fed test system in which electric car with PWM-controlled converters is running.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.6
• /
• pp.412-417
• /
• 2000

High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.