• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.335-338
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• 1999

The effect of monoclinic $ZrO_2$(pure) and tetragonal $ZrO_2$ containing 5.35wt% $Y_2$$O_3$(Y-TZP) addition on the mechanical properties and thermal shock resistance of $Al_2$$O_3$ ceramic were investigated. The addition of $ZrO_2$(m) and Y-TZP increased sintering density of $Al_2$$O_3$. The vickers hardness increased with increasing the volume fraction of Y-TZP going through a maximum at 20wt%. The hardness of the specimens was found to be depend on the sintering density. With increasing the volume fraction of $ZrO_2$(m) and Y-TZP, the fracture toughness of the composite is increased. This result may be taken as evidence that toughening of ${Al_2}{O_3}$ can also be achieved by the transformation toughening and microcrack toughening of $ZrO_2$. The property of the& shock for ${Al_2}{O_3}$-$ZrO_2$ composites was improved by increasing the volume fraction of monoclinic $ZrO_2$(pure).Grain size increased with increasing the volume fraction of $ZrO_2$.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.199-205
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• 1993

Effects of grain size distribution on the breakdown voltage of ZnO varistors were investigated in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems, respectively. The grain size was increased with increasing sintering temperature maintaining lognormal distribution in both systems. The width of grain size distribution of ZnO-Bi2O3-CoO-Sb2O3 system was narrower than that of ZnO-Bi2O3-CoO-Sb2O3 system. The breakdown voltage(Vb) was decreased by increasing sintering temperature(1000~135$0^{\circ}C$) and sintering time(0.5~5hr), due to the enhancement of ZnO grain growth. The current path of the ZnO varistor was dependent on the distribution of the largest grains (chains of long grains) between the electrodes.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.19-22
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• 2015

The joining behavior of YSZ ceramics to the glasses used in the $9Al_2O_3-24ZrO_2-51SiO_2-16R_2O$ and $9Al_2O_3-24ZrO_2-51SiO_2-7La_2O_3-9R_2O$ (wt%) glass systems was investigated. The glass transition and softening temperatures were determined to be $430^{\circ}C$ and $760^{\circ}C$, respectively. The behavior of the contact angle was inversely proportional to an increase in the temperature. The Zr element in YSZ acted as a nucleation agent and contributed to the bonding behavior at the interface.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.35-40
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• 1985

The composition of the base glass was determined to be $Na_2O$ 15, $Fe_2O_3$ 35, $B_2O_3$ 0~20, $P_2O_5$ 30~50 by mole percent. The heating temperature for nucleation was determined by means of thermal expansion curve. Crystalline phases were investigated by X-ray diffraction method and I.R Spectra. Electrical conductivities of glass spec-imens were observed in the temperature range 25~20$0^{\circ}C$ The activation energies of these specimens were caculated. The results obtained were as follows : 1) The limit composition of the melts 15mol% $Na_2O$ 35mole% $Fe_2O_5$ 20mole% $B_2O_3$ 30mole% $P_2O_5$ was able to be formed into desired shapes during cooling, . 2) In the measurement of d. c conductivity($\delta$) on the glasses in the system $15Na_2O-35Fe_2O_3$-$B_2O_3$-(50-x) $P_2O_5$ the values decreased by replacing 5 mole% $P_2O_5$ with $B_2O_3$ 3) The d. c conducties of heat treated samples were increased by replacing $P_2O_5$ with $B_2O_3$ 4) $B_2O_3$ contributed to precipitate crystals such as${\gamma}$-$Fe_2O_3$ $Fe_3O_4$ which had the advantage of electronic conduction in heat treated samples. 5) The slope plotted Log($\delta$) versus 1/T in this glass system was linear in the measured temperature range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.332-341
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• 1998

Reaction kinetics for the solid - state reaction of ${\alpha}-Al_2O_3$with amorphous $SiO_2$to produce mullite ($3Al_2O_3;{cdot};2SiO_2$) was studied in the temperature range of 1450~$1480^{\circ}C$. Rate of kinetic reaction were determined by using $SiO_2$- coated $Al_2O_3$ compact containing 28.16 wt.% $SiO_2$and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of mullite indicated that the reaction of ${\alpha}-;Al_2O_3$ with $SiO_2$to form $3Al_2O_3\;{\cdot}\;2SiO_2$ start between 1450 and $1480^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation; The activation energy was 31.9 kJ/mol.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.57-61
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• 2004

Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.488-494
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• 1988

Effects of MnO2 addition on themicrostructure, dielectric and piezoelectric properties of Rhombohedral, Tetragonal and Morphotropic phase boundary(MPB) in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 system were investigated and respectively the amount of MnO2 addition was 0, 0.2, 0.5, 1.0, 3.0wt%. In the tetragonal region, compared with the Rhombohedral and Morpotropic phase boundary, Mechanical quality factor(Qm), Curie temperature(Tc) and Dissipation factor were promoted by addition of MnO2. According to the results of the microstructure, dielectric and piezoelectric properties, the solid solution range of MnO2 addition in this system was 0.2-0.5wt%.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.364-370
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• 1995

ex-AUC U$O_{2}$ 분말과 $Gd_{2}$O_{3}$ 분말을 기계적으로 혼합하여 소결한 U$O_{2}$-$Gd_{2}$O_{3}$ 소결체의 밀도 변화와 재소결 후 밀도변화를 기공크기 및 분포의 변화로 서술하였다. 수소분위기에서 175$0^{\circ}C$, 4시간 동안 소결하였을 때, 순수 U$O_{2}$의 소결밀도는 97.2% T.D.였으나 6wt% $Gd_{2}$O_{3}$ 첨가까지는 U$O_{2}$-$Gd_{2}$O_{3}$의 소결밀도는 $U^{+4}$와 $Gd^{+4}$의 상호확산 때문에 약 90% T.D.로 급격히 감소하였다. 그러나 6wt% 이상의 $Gd_{2}$O_{3}$가 첨가되면 우라늄이온 산화아와 산소침입으로 인하여 소결밀도는 오히려 증가하였다. 1$700^{\circ}C$에서 재소결시킬 때 순수 U$O_{2}$ 소결체에서는 재소결 시간에 따라 밀도증가가 발생하였다. U$O_{2}$-$Gd_{2}$O_{3}$ 소결체 경우에는 재소결시 밀도가 감소하였으나 재소결 시간이 증가함에 따라 다시 밀도는 증가하였고, 6wt%$Gd_{2}$O_{3}$가 첨가된 U$O_{2}$-$Gd_{2}$O_{3}$ 소결체에서 밀도가 가장 많이 감소하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.394-399
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• 2000

The mechanical and electrical properties of pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), TiB2, and (Al5Y3O12). Reaction between Al2O3 and $Y_2O_3$ formed YAG but the relative density decreased with increasing $Al_2O_3+Y_2O_3$ contents. The Flexural strength showed the value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives at room temperatures. Owing to crack deflection and crack bridging, the fracture toughness showed 6.2, 6.0 and 6.6 MPa.m1/2 for composites added with 4, 8 and 12 wt% Al2O3+Y2O3 additives respectively at room temperature. The resistance temperature coefficient showed the value of $3.6\times10^{-3},\; 2.9\times10^{-3}\; and\; 3.0\times10^{-3} /^{\circ}C$$^{\circ}C$ for composite added with 4, 8 and 12 wt% $Al_2O_3+Y_2O_3$additives respectively at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}$.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.