• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.86-90
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• 2006

Discharge of the flat lamp lighting source research are requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the f1at lamp lighting source to understand property of lighting source is very important. Distance of discharge electrode is 5.5mm and width is 16.5mm, we have measured electron temperature and electron density measured with single Langmuir probe in flat lamp. We have tested the discharge from 100 Torr to 300 Torr pressure. The pulse is rectangular pulse with frequency 20kHz and duty ratio 20%. In result, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.5-8
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• 2000

The population density of excited species in dc, rf and laser ablation plume plasmas has been measured using laser absorption spectroscopy. It was shown that, when the plasma was modulated by on and off with, the sensitivity and signal to noise (S/N) ratio became high. For example, the atomic O(3$^{5}$ S$^{o}$ $_2$) Population density, No* in $O_2$/He mixtures was obtained by the highest S/N ratio at a frequency of 2.7kHz. In a 20Torr room air, the lowest No* level to be detectable was shown to be an order of 10$^{7}$ cm$^{-3}$ . The population densities of resonance Ar(1S$_2$) and Xe(1S$_4$) levels were also measured in barrier discharges and laser ablation plasmas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.379-382
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• 2000

The characteristics of Xe discharge lamp(Mercuryless lamp) are described in this paper. In this paper, FFL is operated by sine wave and pulsed source. We apply V-Q Lissajous' figure for the discharge measurements of FFL which has the electrodes covered with dielectric. When FFL is operated by sine wave source, the characteristics are similar to DBD(Dielectric Barrier Discharge) and SD(Silent Discharge). And we compared the characteristics of FFL which is operated with sine wave and pulsed discharge by using V-Q Lissajous' figure method. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. As the duty ratio increases the electric field becomes strong and much more xenon ions are produced. And the number of metastable xenon atoms seem to increase, therefore, the phosphor radiation after the cut off of voltage increases compared with the first peak of radiation. Consequently, the 172㎚ radiation becomes strong as the duty ratio increases.

• 전자공학회논문지 IE
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• 제44권1호
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• pp.1-5
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• 2007

본 논문에서는 FFL에 대한 기초 방전특성의 일부분으로 인가전압을 정현파와 구형파로 변화시켜 V-Q Lissjous 도형을 이용하여 FFL의 방전형태를 분석하고, 인가전압의 듀티비(duty ratio)의 면화에 의한 radiation transition에 대하여 고찰하였다. FFL을 정현파와 펄스파을 이용하였고, 절연층으로 둘러 쌓여 있는 전극을 갖는 FFL의 방전 특성을 V-Q 리사쥬 도형을 이용하여 방전 특성을 고찰하였다. FFL은 펄스파로 구동하였을 때 방전 전류는 전압의 상승 순간에 방전 전류가 흐른다. 듀티비가 증가하면 준안정 준위의 Xe 원자들은 증가하며 172nm의 자외선 방사량이 증가하고 있음을 확인할 수 있었다.

• 분석과학
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• 제15권1호
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• pp.7-14
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• 2002

본 연구에서는 레이저 애블레이션 이온 트랩 질량분석법을 이용하여 금속 및 세라믹 시료들에 대한 원소분석을 수행하였고, 이때 이온화 장치로는 XeCI 엑시머 레이저를 사용하였고 검출장치로서 이온트랩 질량 분석기를 사용하였다. 시료는 트랩의 바깥에 장착하여 시료의 교환이 매우 쉽도록 하였고 고체시료의 분석에 있어서 매우 효과적임을 밝혔다. 헬륨기체의 압력이나 이온저장시간, 초기질량제한 RF 전압 등에 대한 기초 실험을 통하여 실험의 최적 조건을 구하였고 (헬륨 기체압력 $1{\times}10^{-4}$ Torr 이온 저장시간 100 ms 초기 질량 제한전압 $1150V_{p-p}$), 이 결과를 토대로 금속시료(구리, 몰리브데늄)와 세라믹 시료(알루미나 세라믹, 지르코니아 세라믹) 들에 대한 원소분석을 수행하였다.

• 전자공학회논문지D
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• 제35D권6호
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• pp.46-53
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• 1998

저온 공정으로 제작되는 다결정 실리콘 박막 트랜지스터의 활성층을 이중 활성층(a-Si/a-SiN/sub x/)으로 제작하는 공정을 제안하고 다결정 실리콘 박막 트랜지스터를 제작하였다. 본 논문에서는 활성층의 아래쪽 실리콘 박막에 약간의 질소기를 첨가한 후 그 위에 순수한 비정질 실리콘 박막을 증착하여 엑시머 레이저의 에너지로 비정질 실리콘 박막을 결정화하여 사용하였다. 이중 활성층 (a-Si/a-SiN/sub x/)의 경우, 하부층의 NH₃/SiH₄ 유속비가 증가함에 따라, 상부 a-Si 층의 결정 성장이 촉진됨을 알 수 있었으나, n/sup +/ poly-SiN/sub x/ 층의 전도도 특성을 고려해 볼 때, NH₃/SiH₄ 유속비는 0.11의 상한치를 가짐을 알 수 있었다. 전계 방출 전류에 영향을 미치는 광학적 밴드갭의 경우, poly-Si 박막에 비해 증가하였으며, NH₃/SiH₄ 유속비가 0.11 이하에서도 0.1eV 정도의 증가를 보여, 이로 인하여 소자 제작시 전계 방출 전류가 억제될 것을 예상할 수 있다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1522-1525
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• 2007

In this study, flat fluorescent lamps (FFLs) having surface discharge structures was fabricated by screen printing technique and were studied using spectraradiometer and square pulse power supply. Two types of FFLs having different shapes of electrodes (crosstype and line-type structure) were compared with variation of discharge shape and mixed gas ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1162-1165
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

• 한국세라믹학회지
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• 제33권3호
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.