• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• Journal of Powder Materials
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• v.21 no.3
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• pp.207-214
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• 2014

In this study, nano-scale copper powders were reduction treated in a hydrogen atmosphere at the relatively high temperature of $350^{\circ}C$ in order to eliminate surface oxide layers, which are the main obstacles for fabricating a nano/ultrafine grained bulk parts from the nano-scale powders. The changes in composition and microstructure before and after the hydrogen reduction treatment were evaluated by analyzing X-ray diffraction (XRD) line profile patterns using the convolutional multiple whole profile (CMWP) procedure. In order to confirm the result from the XRD line profile analysis, transmitted electron microscope observations were performed on the specimen of the hydrogen reduction treated powders fabricated using a focused ion beam process. A quasi-statically compacted specimen from the nano-scale powders was produced and Vickers micro-hardness was measured to verify the potential of the powders as the basis for a bulk nano/ultrafine grained material. Although the bonding between particles and the growth in size of the particles occurred, crystallites retained their nano-scale size evaluated using the XRD results. The hardness results demonstrate the usefulness of the powders for a nano/ultrafine grained material, once a good consolidation of powders is achieved.

• Carbon letters
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• v.21
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• pp.33-50
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• 2017

In this study, Fe-Ni bimetallic catalyst supported on kaolin is prepared by a wet impregnation method. The effects of mass of kaolin support, pre-calcination time, pre-calcination temperature and stirring speed on catalyst yields are examined. Then, the optimal supported Fe-Ni catalyst is utilised to produce multi-walled carbon nanotubes (MWCNTs) using catalytic chemical vapour deposition (CCVD) method. The catalysts and MWCNTs prepared using the optimal conditions are characterized using high resolution transmission electron microscope (HRTEM), high-resolution scanning electron microscope (HRSEM), electron diffraction spectrometer (EDS), selected area electron diffraction (SAED), thermogravimetric analysis (TGA), Brunauer-Emmett-Teller (BET), and X-ray diffraction (XRD). The XRD/EDS patterns of the prepared catalyst confirm the formation of a purely crystalline ternary oxide ($NiFe_2O_4$). The statistical analysis of the variance demonstrates that the combined effects of the reaction temperature and acetylene flow rate predominantly influenced the MWCNT yield. The $N_2$ adsorption (BET) and TGA analyses reveal high surface areas and thermally stable MWCNTs. The HRTEM/HRSEM micrographs confirm the formation of tangled MWCNTs with a particle size of less than 62 nm. The XRD patterns of the MWCNTs reveal the formation of a typical graphitized carbon. This study establishes the production of MWCNTs from a bi-metallic catalyst supported on kaolin.

• Applied Microscopy
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• v.26 no.1
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• pp.95-104
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• 1996

A comprehensive methodology to characterize the interfacial reaction products of $SiC_p/2024$ Al composites is introduced on the basis of the experimental results obtained using XRD, SEM and TEM. XRD performed on the electrochemically extracted $SiC_p$ and bulk $SiC_p/2024$ Al composite have shown that the interfacial reaction products consist of $Al_{4}C_3$ having hexagonal crystallographic structure, pure eutectic Si having diamond cubic crystallographic structure, and $CuAl_2$, having tetragonal crystalloraphic structure, respectively. According to the images observed by SEM, $Al_{4}C_3$, which has been reported to have needle shape, has a hexagonal platelet-shape and eutectic Si is found to have a dendritic shape. In addition eutectic $CuAl_2$, was observed to form near interface and/or along the grain boundaries. In order to confirm the results obtained by XRD, the primitive cell volume and reciprocal lattice height of such interfacial reaction products were calculated using the data obtained from convergent beam electron diffraction (CBED) patterns, and then compared with theoretical values.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.513-518
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• 2003

La/sub 2/3-x/Li/sub 3x/□/sub 1/3-2x/TiO₃ compounds with x=0.13 and 0.12 were prepared by slow cooling (x=0.13) and rapid quenching (x=0.12) into the liquid nitrogen after sintering at 1350℃ for 6 h. Their crystal structure has been determined by Rietveld refinement of both the powder neutron and X-ray diffraction data. From neutron diffraction data, we found that the main phase was not tetragonal (P4/mmm), but trigonal (R3cH). The refinement of neutron diffraction for the slow cooled samples were in a good agreement with a new model; a mixture of trigonal (R3cH, 45.7 wt％), tetragonal (p4/mmm, 37.0 wt％), and Li/sub 0.57/Ti/sub 0.86/O₂(pbnm, 17.2 wt%), but the quenched sample was found not to contain tetragonal (p4/mmm). X-ray diffraction data couldn't be well fitted because of the Poor scattering factor of lithium ions and the similar reflection patterns among trigonal (R3cH), tetragonal (p4/mmm), and cubic (Pm3m). We also knew that one transport bottlenecks is destroyed by one La vacancy in the case of trigonal (R3cH).

• Proceedings of the Korean Geotechical Society Conference
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• 1999.10a
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• pp.75-80
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• 1999

In this study, clay sampled from Yangsan$.$Mulkum site were used to analyze mineral properties. Mineral and chemical properties of clay were investigated through X-ray fluorescence spectrometer(XRF), X-Ray Diffraction(XRD), and Scanning Electron Microscope(SEM) analysis. The result of this test represents that Yangsan$.$Mulkum clay are composed of quartz, albite, anorthite, orthocalse and illite.

• Journal of Pharmaceutical Investigation
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• v.37 no.1
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• pp.23-26
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• 2007

Two crystal forms of cefuroxime axetil were obtained by the recrystallization from different organic solvents and characterized by differential scanning calorimetry (DSC), X-ray powder diffraction (XRD). It was confirmed that two crystal forms are identical. The dissolution patterns of these two forms were also checked in 0.07 N HCl at $37{\pm}0.5^{\circ}C$, 100 rpm for 180 minutes. The transformation during storage was also studied.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1113-1119
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• 1998

Crystal structure of needle-shaped maghemite(${\gamma}$-{{{{ { {Fe }_{2 }O }_{3 } }}) has been studied by the Rieveld analysis of powder X-ray diffraction patterns. The tetragonal space group P41,.3212 and cubic space group P41,.32 have been have been used for the refinement of X-ray diffraction patterns. The crystal system of maghemite is closed to tetragonal more than cubic. The tetragonal lattice parameters are a=8.3460$\AA$ and c=25.034$\AA$ The standard X-ray diffraction pattern of the tetragonal maghemite analyzed with space group P41,.3212 is proposed.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.245-253
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• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.