• Korean Journal of Materials Research
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• v.10 no.9
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• pp.642-647
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• 2000

Nanocrystalline NiAl alloy containing 36at.%Al was synthesized by mechanical alloying (MA). Synthesized powder was sintered by a pulse electric current sintering (PECS) facility. Effecting parameters on the phase transformation were discussed in terms of cooling rate and time spent on heat treatment. The behavior of phase transformation for sintered parts was examined by differential scanning calorimetry (DSC) and X-ray diffraction (XRD) method. Microstructure was observed by scanning electron microscopy (SEM). Martensitic lattice parameter and volume fraction was calculated by direct comparison method in X-ray diffraction analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.83-90
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• 1998

Stage transformation characteristics of Li, K and Na-graphite deintercalation compounds (GDICs) were studied under consideration of a deintercalation mechanism of the intercalants between carbon layers. Li-graphite intercalation compounds (GICs) synthesized by a controlling temperatures and pressures have been spontaneously decomposed in the atmosphere. By X-ray differaction analysis the $d_{001}$-values of stage 1 and 2 were identified to be 3.71 and 7.06 $\AA$, respectively. After 6 weeks, the deintercalation reaction of the Li-GICs ceased and only residual compounds could be observed. K-GICs were synthesized by the modified two-bulb method resulting in structural stabilities and stage transitions. By X-ray diffraction analysis the very stable K-graphite residue compounds were observed after 10 weeks. Na-GICs with stage 1 and 2 were synthesized using the high temperature and pressure technique. The temperature dependence of a deintercalation reaction and a thermal stability of Na-GICs were discussed. The structure changes of the Na-GDICs depending on heating rates were identified by X-ray diffraction. According to the deintercalation process, the stage transformations could be attributed to irregular deintercalations of the GDICs with disordered stage.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.21-26
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• 2000

Nanosized powders of trimetallic orthoferrites containing La and Sm in different ratios were synthesised by the thermal decomposition at low temperatures of the corresponding hexacyanocomplexes. The precursors and their decomposition products were analyzed by simultaneous thermogravimetric and differential thermal analysis (TG/DTA), x-ray diffraction (XRD) and Raman spectroscopy. Single phase trimetallic precursors and oxides were obtained. The crystal structure of the perovskitic oxides was orthorhombic, and the lattice parameters were affected by the ionic size of the rare earth elements present in the oxides. Raman spectroscopy showed a disorder effect in the vibrational bands with increasing the La content.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.1
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• pp.176-181
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• 2006

In this study, systematical investigations were carried out on crystal qualifies and optical properties of $ZnSe_{1-x}:Te_x$ (x=0.002-0.04) thin films frown by molecular beam epitaxy (MBE). The crystal qualifies and optical properties have been investigated by X-ray diffraction (XRD) and Photoluminescence (PL) measurements, respectively. From the XRD measurements, the crystallographic characteristics showed mediocre crystal quality with increasing the Te composition. From the PL measurements, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSe:Te epilayers. The efficient blue and green emission were attributed to the recombination of excitons trapped at isoelectronic isolated a single Te atom and $Te_n(n{\geq}2)$ clusters. respectively. The blue emission become dominant in Te tightly doped $ZnSe_{1-x}:Te_x$ $(Te=0.2\%)$ epilayers with increasing temperature. For the Te heavily doping condition $(Te=4.0\%)$, the dominant green emission could be observed at around 160K.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.272.2-272.2
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• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.175.1-175.1
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• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.1-15
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• 1997

Titanium oxide films were prepared by ion beam enhanced deposition where the films were synthesized by deposition titianium atoms and simultaneously bombarding with xenon ion beam at an energy of 40 keV in an $O_2$ environ,ent. Structure and composition of titanium oxide films were investigated by X-ray Doffractopm (XRD) Ritjerfprd Backscattering Spectroscopy (RBS) and X-ray Diffraction(XRD) Rutherford Backscattering Spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) The results show that thestructure of the prepared films exhibit a rutile phase structure wit high(200) orientation and the O/Ti ratio of the titanium oxide films was about 2:1 XPS anlysis shows that $Ti^{2+},Ti^{3+}\;and\;Ti^{4+}$ chemical states exist on the titanium oxide films. the blood compatibility of the titanium oxide films was studied by measurements of blood clotting time and platelet adhesion. The results show that the anticoagulation property of titanium oxide films improved significantly and better than that of LTI-carbon which was widely used to fabricate artificial heart valve.

• Journal of Integrative Natural Science
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• v.8 no.3
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• pp.192-203
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• 2015

In view of the growing medicinal importance of pyrazole and its derivatives, the single crystal X-ray diffraction study was carried out for the potential active 2-Benzyl-3-[3-(4-bromo-phenyl)-1-phenyl-1H-pyrazol-4yl]-4,6-dioxo-5-phenyl-octahydro-pyrrolo[3,4-C]pyrrole-1-carboxylic acid ethyl ester ($C_{37}H_{31}BrN_4O_4$, H2O). In the title compound are two molecules exist in the asymmetric unit. It crystallizes in the monoclinic space group $P{\hat{i}}$ with unit cell dimension $a=13.361(18){\AA}$, $b=13.424(17){\AA}$ and $c=21.649(2){\AA}$ [${\alpha}=80.745(9)^{\circ}$, ${\beta}=79.770(10)^{\circ}$ and ${\gamma}=60.788(6)^{\circ}$]. The pyrazole ring adopts planar conformation. The sum of the bond angles at nitrogen atom of the pyrazole ring indicates the $Sp^2$ hybridized state. The crystal structure is stabilized by intramolecular C-H...O hydrogen bond interaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.