• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.8
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• pp.695-700
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• 2014

In the present study, the melting temperature depression of Sn nanoparticles manufactured using the modified evaporation method was investigated. For this purpose, a modified evaporation method with mass productivity was developed. Using the manufacturing process, Sn nanoparticles of 10 nm size was manufactured in benzyl alcohol solution to prevent oxidation. To examine the morphology and size distribution of the nanonoparticles, a transmission electron microscope was used. The melting temperature of the Sn nanoparticles was measured using a Differential scanning calorimetry (DSC) which can calculate the endothermic energy during the phase changing process and an X-ray photoelectron spectroscopy (XPS) used for observing the manufactured Sn nanoparticle compound. The melting temperature of the Sn nanoparticles was observed to be $129^{\circ}C$, which is $44^{\circ}C$ lower than that of the bulk material. Finally, the melting temperature was compared with the Gibbs Thomson and Lai's equations, which can predict the melting temperature according to the particle size. Based on the experimental results, the melting temperature of the Sn nanoparticles was found to match well with those recommended by the Lai's equation.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.242-247
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• 1998

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.35-40
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• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.446-451
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• 1999

Surface of Polymethylmethacrylate (PMMA) was modified by ion assisted reaction in which ion beam of Ar or$ O_2$is irradiated on polymer in reaction gas environment. Ion beam energy was changed from 600 to 1000eV, and ion doses were varied from $5\times10^{14} ions/cm^2 to 1\times10^{17} ions/cm^2$. Contact angle and surface energy of modified PMMA were measured by contact angle micrometer using distilled water and formamide. In the case of $Ar^+$ ion irradiation only, the contact angle reduced from $68^{\circ} to $35^{\circ}$ and the surface energy was changed from 46 dyne/cm to 60 dyne/cm. The contact angle significantly decreased to $14^{\circ}$and the surface energy increased to 72 dyne/cm when the surface of PMMA was modified by oxygen ion irradiation in oxygen gas environment. Improvement of wettability results from the formation of new hydrophilic group which is identified as C-O chain by XPS analysis. Recovery of wettability in dry air and maintenance of it in water condition were explained in view of the formation of hydrophilic group.

• Korean Chemical Engineering Research
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• v.43 no.6
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• pp.756-760
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• 2005

In this study, the effect of $N_2$-plasma treatment on carbon blacks (CBs) was investigated by analyzing acid-base surface values and surface functional groups of CBs. The surface characteristics of the CBs were determined by fourier transformed-infrared (FT-IR) spectrometer, X-ray photoelectron spectroscopy (XPS), and Boehm's titration method. Electrochemical properties of the plasma-treated CBs-supported Pt (Pt/CBs) catalysts were analyzed by cyclic voltammetry (CV) experiments. From the results of FT-IR and acid-base values, $N_2$-plasma treatment at 300 W intensity on the CBs led to the formation of the free radical. The peak intensity was increased with increasing the treatment time due to the formation of new basic functional groups(such as C-N, C=N, $-NH_3{^+}$, -NH, and =NH) by the free radical. Accordingly, the basic values were increased by the basic functional groups. However, after a specific reaction time, $N_2$-plasma treatment could hardly influence change of surface functional groups of CBs, due to the disappearance of free radical. Consequently, it was found that optimal treatment time was 30 second for electro activity of Pt/CBs catalysts.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Polymer(Korea)
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• v.37 no.1
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• pp.61-65
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• 2013

In this work, the anodic oxidation of carbon fibers was carried out to enhance the mechanical interfacial properties of carbon fibers-reinforced epoxy matrix composites. The surface characteristics of the carbon fibers were studied by FTIR, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). Also, the mechanical interfacial properties of the composites were studied with interlaminar shear strength (ILSS), critical stress intensity factor ($K_{IC}$), and critical strain energy release rate ($G_{IC}$). The anodic oxidation led to a significant change in the surface characteristics of the carbon fibers. The anodic oxidation of carbon fiber improved the mechanical interfacial properties, such as ILSS, $K_{IC}$, and $G_{IC}$ of the composites. The mechanical interfacial properties of the composites anodized at 20% sulfuric/nitric (3/1) were the highest values among the anodized carbon fibers. These results were attributed to the increase of the degree of adhesion at interfaces between the carbon fibers and the matrix resins in the composite systems.