• Title/Summary/Keyword: XPS(X-ray photoelectron spectroscopy)

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Effect of Acid Treatments on Hydrogen Storage Behaviors of Ordered Mesoporous Carbons (화학적 산처리가 중기공 탄소체의 수소저장거동에 미치는 영향)

  • Lee, Seul-Yi;Park, Soo-Jin
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.229.1-229.1
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    • 2010
  • We investigated the effect of chemical acid treatments on hydrogen storage behaviors of the ordered mesoporous carbons (MCs). The surface functional groups and specific elements of the MCs were characterized with Fourier Transform Infrared (FT-IR) spectrometry and X-ray photoelectron spectroscopy (XPS). Also, the changes in the surface functional groups of the MCs were quantitatively detected by Boehm's titration method. The structural properties of the MCs were investigated using X-ray diffraction (XRD). The hydrogen adsorption capacity of the MCs was evaluated by means of adsorption isotherms at 77 K/1 bar. The formation of surface functional groups by the acidic treatments could influence on the hydrogen storage capacity of the MCs.

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XPS STUDY ON DNA DAMAGE BY LOW-ENERGY ELECTRON IRRADIATION

  • Noh, Hyung-Ah;Cho, Hyuck
    • Journal of Radiation Protection and Research
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    • v.36 no.4
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    • pp.190-194
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    • 2011
  • After the first report that electrons with sub-ionization energy of DNA could cause single strand breaks or double strand breaks to DNA, there have been various studies to investigate the mechanisms of DNA damage by low-energy electrons. In this paper, we examined the possibility of using X-ray photoelectron spectroscopy (XPS) to analyze the dissociation patterns of the molecular bonds by electron irradiation on DNA thin films and tried to establish the method as a general tool for studying the radiation damage of biomolecules by low energ yelectrons. For the experiment, pBR322 plasmid DNA solution was formed into the films on tantalum plates by lyophilization and was irradiated by 5-eV electrons. Un-irradiated and irradiated DNA films were compared and analyzed using the XPS technique.

Electric conduction mechanism Analysis of AW Thin Films using XPS Measurement (XPS 분석에 의한 AZO 박막의 전기전도 메커니즘 해석)

  • Jin, Eun-Mi;Kim, Kyeong-Min;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.446-447
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    • 2007
  • Aluminisum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). In our paper, AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$, $800^{\circ}C$ for 2 hr with $N_2$ atmosphere, respectively. We investigated that the electric properties and qualitative analysis of AZO films, which measured using the methods of Hall effect, X-ray photoelectron spectroscopy (XPS).

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Interface formation between tris-(8-hydroxyquinoline) aluminum and room temperature stable electride: C12A7:$e^-$

  • Kim, Ki-Beom;Kikuchi, Maiko;Miyakawa, Masashi;Yanagi, Hiroshi;Kamiya, Toshio;Hirano, Masahiro;Hosono, Hideo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.235-238
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    • 2006
  • Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

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Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

  • Cheong, Woo-Seok;Park, Jonghyurk;Shin, Jae-Heon
    • ETRI Journal
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    • v.34 no.6
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    • pp.966-969
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    • 2012
  • From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

Effect of Plasma Treatment on Adhesion Strength between Underfill and Substrate (플라즈마 처리에 따른 언더필과 기판 사이의 접착 강도에 관한 연구)

  • No Bo-In;Jeong Seung-Bu
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.13-15
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    • 2006
  • The effects of plasma treatment on the surfaces of the FR-4 (Flame Resistant-4) and copper substrates are investigated in terms of X-ray photoelectron spectroscopy (XPS), contact angle, and atomic force microscopy (AFM). The adhesion strengths of the underfills/FR-4 substrate and underfills/copper substrate are also studied. As experimental results, the plasma treatments of FR-4 and copper substrate surfaces yield several oxygen complexes in hydrophilic surfaces, which can play an important role in increasing the surface polarity, wettability, and adhesion characteristics of the underfills/substrates.

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The Characteristic of $SnO_2$ Thin Films Grown by LP-Thermal MOCVD (LP-Thermal MOCVD 방법을 이용한 $SnO_2$ 박막의 증착 시간에 따른 특성)

  • Jeong, Jin
    • Journal of Integrative Natural Science
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    • v.1 no.1
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    • pp.54-57
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    • 2008
  • This report examines the variation on structural properties of $SnO_2$ thin films. TEM studies shows some of the interfaces to be atomically faceted. Secondary X-ray photoelectron Spectroscopy Analysis(XPS) depth profiles show that films have a uniform composition along the depth.

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Electrolyte-Concentration Effects on Interfacial Reactions Between Lithium Negative Electrode and Electrolyte (리튬금속 음극/전해질 계면반응에 미치는 전해질 농도의 영향)

  • Seo, Hee-Young;Jeong, Soon-Ki
    • Proceedings of the KAIS Fall Conference
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    • 2007.11a
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    • pp.353-355
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    • 2007
  • 본 논문에서는 리튬금속을 음극으로 하는 반전지에 여러 농도의 전해질을 사용하여 그에 따른 충/방전 효율과, 음극 표면을 관찰하는 것에 의해 전해질 농도가 음극/전해질 계면반응에 어떠한 영향을 끼치는지 알아보았다. 또한 X-ray Photoelectron Spectroscopy(XPS)를 사용하여 표면에 생성되는 물질의 조성과 구조를 해석하였다.

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Electrochemical Reactions of $C_{60}$ Films in the Presence of Water : An Electrochemical Quartz Crystal Microbalance Study

  • 서경자;신명순;전일철
    • Bulletin of the Korean Chemical Society
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    • v.17 no.9
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    • pp.781-786
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    • 1996
  • Mass transport behavior of C60 films on electrodes with different thicknesses has been studied by an Electrochemical Quartz Crystal Microbalance (EQCM) during electrochemical reduction-oxidation processes in the presence of water. C60 films were found to be reduced in the presence of water and they remains quite stable. In thin films, the mass on electrode decreased after a complete cycle while X-ray Photoelectron Spectroscopy (XPS) study does not support the existence or formation of C60-epoxides during electrochemical reduction processes in the presence of water or oxygen.

Electric-field Assisted Photochemical Metal Organic Deposition for Forming-less Resistive Switching Device (전기장 광화학 증착법에 의한 직접패턴 비정질 FeOx 박막의 제조 및 저항변화 특성)

  • Kim, Su-Min;Lee, Hong-Sub
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.77-81
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    • 2020
  • Resistive RAM (ReRAM) is a strong candidate for the next-generation nonvolatile memories which use the resistive switching characteristic of transition metal oxides. The resistive switching behaviors originate from the redistribution of oxygen vacancies inside of the oxide film by applied programming voltage. Therefore, controlling the oxygen vacancy inside transition metal oxide film is most important to obtain and control the resistive switching characteristic. In this study, we introduced an applying electric field into photochemical metal-organic deposition (PMOD) process to control the oxidation state of metal oxide thin film during the photochemical reaction by UV exposure. As a result, the surface oxidation state of FeOx film could be successfully controlled by the electric field-assisted PMOD (EFAPMOD), and the controlled oxidation states were confirmed by x-ray photoelectron spectroscopy (XPS) I-V characteristic. And the resistive switching characteristics with the oxidation-state of the surface region could be controlled effectively by adjusting an electric field during EFAPMOD process.