• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.233-238
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• 1994

The effect of die upset and heat treatment on the magnetic properties of mechanically ground $Nd_{16}Fe_{78}B_{6}$ alloys has been studied. Although stripe domain patterns parallel to the compression direction were observed after die upset, it was found that crystallographic c-axes of a specimen were not completely aligned along the compression direction' which resulted in the decrease of Br. The average grain size of a die-upset specimen annealed for 5 hours at $1000^{\circ}C$ was about $20\mu\textrm{m}$, resulting in reduced values of Br and $_{i}H_{c}$. The maximum magnetic properties (Br=7.8 kG and $(_{i}H_{c}=14\;kOe) were obtained from the magnet die-upset at $750^{\circ}C$ using the alloy powder ground for 13 hours.

• YAKHAK HOEJI
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• v.37 no.3
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• pp.216-227
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• 1993

Complex formations of practically insoluble antelmintic drugs such as mebendazole (MBZ), albendazole (ABZ) and flubendazole (FBZ) with dimethyl-$\beta$-cyclodextrin (DM-$\beta$-CyD) and 2-hydroxypropyl-$\beta$-cyclodextrin (HP-$\beta$-CyD) together with $\alpha$-, $\beta$- and $\gamma$-cyclodextrins(CyDs) in duffered solutions were investigated by solubility method. $A_{L}$ type phase solubility diagrams were obtained in all cases except for the complexation (B$_{s}$, type) of FBZ with $\gamma$-CyD. The highest stability constants were obtained with DM-$\beta$-CyD, followed by $\alpha$-CyD > $\beta$-CyD > HP-$\beta$-CyD > $\gamma$-CyD for ABZ, and HP-$\beta$-CyD > $\gamma$-CyD > $\beta$-CyD > $\alpha$-CyD for FBZ at pH 1.2. On the other hand, solid dispersion systems of ABZ and FBZ with $\beta$- and DM-$\beta$-CyDs were prepared by solvent evaporation method and evaluated by dissolution, differential thermal analysis and powder x-ray diffractometry. The dissolution rates of ABZ- and FBZ-DM-$\beta$-CyD solid dispersions were much faster than those of drugs alone, corresponding physical mixtures and tablets on market both at pH 1.2 and 6.8. Although dissolution rates of all samples at pH 6.8 were by far lower than those obtained at pH 1.2, as explained by pH-solubility profiles for ABZ and FBZ, the dissolution rates at pH 6.8 of ABZ from $\beta$- and DM-$\beta$-CyD solid dispersions exceeded the respective equilibrium solubility (23.9 $\mu\textrm{g}$/ml). Fast dissolution of ABZ from solid dispersions with CyDs was attributed to the reduction of drug crystallinity and particle size which was supported by DTA and powder x-ray diffractometry. Consequently these results suggest that solid dispersion systems with CyDs may provide useful means to markedly enhance the solubility and dissolution of benzimidazole antelmintic drugs.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.25-33
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• 2001

Sn-3.5Ag-xBi alloys with five different levels of Bi (0, 2.5, 4.8, 7.5, 10 wt%) were prepared for evaluating creep properties. Cast alloys were roiled and heat treated to provide stable microstructures during the subsequent creep tests, which were conducted under constant load using dog-bone specimens. For the Bi containing alloys, creep strength showed the maximum around 2.5 wt%Bi and tended to decrease with increasing Bi content. The stress exponent of the alloy was around 4, suggesting typical dislocation creep, but the exponent was 2 for the 10 wt%Bi alloy, suggesting creep assisted by grain boundary Sliding. For the Bi containing alloys, the brittle fracture mode appeared showing small amount of reduction of area, while the ductile fracture mode was true for the Bi free alloy. Microstructural examination of ruptured specimens showed cavitations on grain boundaries normal to the load axis, and a significant of grain boundary sliding for the Bi containing alloys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.85-88
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• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.97-104
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• 1997

Hydrothermal synthesis of PbZ1-xTixO3 has been investigated. Syntheses were performed using lead acetate triphdrate as Pb source, Ti/Zr gel by hydrolizing Ti-isopropoxide as Tiand Zr source and Zr-propoxide and KOH (0.5m, 1m, 2m) as mineralizer. The hydrothermal synthesis has been examined at 140℃, 150℃ and 160℃. Synthesized PZT powders showed a rectangular shape and were agglomerate. At 1m and 2m KOH concentrations PZT powders were synthesized the respective time of 8 hrs and 1hr but at 0.5m KOH concentration phase pure PZT powders were not synthesized for 5days reaction. At the conditions of low temperature and low KOH concentration unreacted Ti/Zr gel remained although synthesized powders were almost PZT. The size of PZT powders increased with KOH concentrations. PbO solid solutions were formed as intermediate phases and these were classified to PbO-10%TiO2 solid solution and PbO-3% TiO-3% TiO2 solid solution.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.1A
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• pp.85-90
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• 2008

Effects of the emitter degeneration on linearity have been investigated in SiGe HBT double-balanced up-converters with the Gilbert-cell structure. The emitter-coupled degeneration resistors have been optimized for high P1-dB and IP3 through the nonlinear harmonic-balance simulation. Two types of up-converter MMICs fabricated in $0.35{\mu}m$ Si-BiCMOS process were measured to verify the simulation results. The up-converter without the degeneration resistors produces a P1-dB of -13 dBm with an OIP3 of 3.7 dBm, while the up-converter with the degeneration resistors produces a P1-dB of -10 dBm with an OIP3 of 8.7 dBm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and N$_2$ gas ambient annealing method at 950$^{\circ}C$ for 10 min. The specific contact resistivity($\rho$$\sub$c/), sheet resistance(R$\sub$S/), contact resistance(R$\sub$S/), transfer length(LT) were calculated from resistance(R$\sub$T/) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho$$\sub$c/=3.8x10$\^$-5/ Ω$\textrm{cm}^2$ , R$\sub$c/=4.9Ω, R$\sub$T/=9.8Ω and L$\sub$T/=15.5$\mu\textrm{m}$, resulting average values of another sample were $\rho$$\sub$c/=2.29x10$\^$-4/ Ω$\textrm{cm}^2$ , R$\sub$c/=12.9Ω, R$\sub$T/=25.8Ω. The Physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• Journal of Hydrogen and New Energy
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• v.35 no.3
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• pp.336-344
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• 2024

In this study, a Ni_0.9Co_0.05Mn_0.05(OH)₂ precursor used as an anode active material using a black powder leaching solution of a recycled lithium ion battery was prepared through coprecipitation synthesis with co-precipitation time, NH₄OH concentration, pH, and stirring time as variables. The characteristics of the prepared powder were analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), particle size analysis (PSA), and inductively coupled plasma optical emission spectroscopy (ICP-OES). It was confirmed that the single crystal thickness of the LiNi_1-x-yCo_xMn_yO₂ (NCM) precursor changes depending on the NH₄OH concentration and reaction pH value, and thicker single crystals are formed at 2 M NH₄OH compared to 1 M and at pH 10.8-11.8 compared to pH 11.8-12.0. NCM precursor particles increased with coprecipitation time, and it was confirmed that the 72 hours NCM precursor had the largest particle size. Through ICP-OES analysis, it was confirmed that the NCM precursor was synthesized with the target composition of Ni²⁺:Co²⁺:Mn²⁺=90:5:5.

• Honam Mathematical Journal
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• v.28 no.4
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• pp.605-639
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• 2006

Lower dimensional cases of Einstein's connection were already investigated by many authors for n = 2,3,4,5,6,7. This paper is the first part of the following series of two papers, in which we obtain a surveyable tensorial representation of 8-dimensional Einstein's connection in terms of the unified field tensor, with main emphasis on the derivation of powerful and useful recurrence relations which hold in 8-dimensional Einstein's unified field theory(i.e., 8-g-UFT): I. The recurrence relations in 8-g-UFT II. The Einstein's connection in 8-g-UFT All considerations in these papers are restricted to the first class only of the generalized 8-dimensional Riemannian manifold $X_8$.