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Effects of Mn Substitution on Crystallographic and Magnetic Properties of Li-Zn-Cu Ferrites

  • Lee, Young Bae;Choi, Won-Ok;Chae, Kwang Pyo
    • Journal of Magnetics
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    • v.19 no.3
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    • pp.210-214
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    • 2014
  • The effects of manganese substitution on the crystallographic and magnetic properties of Li-Zn-Cu ferrite, $Li_{0.5}Zn_{0.2}Cu_{0.4}Mn_xFe_{2.1-x}O_4$ ($0.0{\leq}x{\leq}0.8$), were investigated. Ferrites were synthesized via a conventional ceramic method. We confirmed the formation of crystallized particles using X-ray diffraction, field emission scanning electron microscopy and $M{\ddot{o}}ssbauer$ spectroscopy. All of the samples showed a single phase with a spinel structure, and the lattice constants linearly decreased as the substituted manganese content increased, and the particle size of the samples also somewhat decreased as the doped manganese content increased. All the $M{\ddot{o}}ssbauer$ spectra can be fitted with two Zeeman sextets, which are the typical spinel ferrite spectra of $Fe^{3+}$ with A- and B-sites, and one doublet. The cation distribution was determined from the variation of the $M{\ddot{o}}ssbauer$ parameters and of the absorption area ratio. The magnetic behavior of the samples showed that an increase in manganese content led to a decrease in the saturation magnetization, whereas the coercivity was nearly constant throughout. The maximum saturation magnetization was 73.35 emu/g at x = 0.0 in $Li_{0.5}Zn_{0.2}Cu_{0.4}Mn_xFe_{2.1-x}O_4$.

Wide-band design of X-cut $LiNbO_{3}$ optcal modulator employing a ridge waveguide (Ridge형 도파로구조 X-cut $LiNbO_3$ 광변조기의 광대역 설계)

  • Huh, Hyun;Kim, Hee-Ju;Pan, Jae-Kyung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.1
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    • pp.89-95
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    • 1997
  • X-cut y-propagation $LiNbO_{3}$ optical modulator is analyzed by finite element calculation. the purpose of this trial is the design of wide-bandwidth x-cut $LiNbO_{3}$ optical modulator with ridge wave guide, which was only applied to z-cut $LiNbO_{3}$ optical modulator. the simulation tool is examined by the comparison between our results and Becker's. And we consider the optimum position of optical waveguide to electrodes for decreasing the driving voltage. The calculated driving-voltage, characteristic impedance and microwave effective index at $1.3{\mu}{\textrm{m}}$ optical wavelength are 18 V.cm, $48.13{\Omega}$ and 2.168, respectively.

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Contamination structure and process on SUS 316 under UHV, HV and air (초고진공, 고진공, 대기압에서 SUS 316의 오염 구조와 오염 과정 연구)

  • 서지근;이규장;신용현;홍승수;정광화
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.1-8
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    • 1997
  • The contamination structure and process on SUS 316 under various exposure conditions were investigated using x-ray photoelectron spectroscopy. The metal-oxide, metal-H-oxides, CO, COH, and $C_xH_y$ are the main components of contaminants on the SUS surface. The compositional profiles of the contaminants are shown to be $C_xH_y$/CO(COH)/metal-oxide on SUS. The contamination proceeds in two steps. The oxidation of the metallic constituents followed by adsorption of hydrocarbons. Under UHV conditions the contamination is mainly due to the oxidation, and, as the exposure time increases, the oxidation continues. In HV or higher pressure, most of the oxides are formed almost immediately after exposure and as the exposure time increases the contamination of hydrocarbons continues to grow. For the SUS sample exposed to atmosphere, the metal oxide is distributed deep inside the surface with an exponentially decreasing concentration, and its thickness is nearly in the order of photoelectron mean free path. It is also seen that the Fe oxide is segregated over Cr oxide in the highly oxidized samples.

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Effect of Carbon on the Coefficient of Thermal Expansion of As-Cast Fe-3 0 wt.%Ni-12.5wt.% Co-xC Invar Alloys

  • 김봉서;유경재;김병걸;이희웅
    • Transactions of Materials Processing
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    • v.8 no.3
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    • pp.247-247
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    • 1999
  • The segregation (distribution) of nickel and the composition of its constituents influence the low thermal expansion characteristics (Invar effect) in Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy. The change of coefficient of the thermal expansion and magnetic properties were studied as an aspect of carbon addition causing the segregation of Ni in primary austenite of as-cast Fe-30 wt.% Ni-12.5 wt.% Co Invar alloy. The coefficient of thermal expansion of Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy showed its lowest value at 0.08 wt.% carbon, increased with increasing carbon content in the range of 0.08-1.0 wt.%C, kept constant at 1.0-2.0 wt.%C and decreased at carbon higher than 2.0 wt.%. The effective distribution of the coefficient of nickel in as-cast Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy increased with increasing carbon content. The volume fraction of they phase of Fe-30 wt.% Ni-12.5 wt.% Co-xC alloy increased with increasing carbon content. The microstructure of Fe-30 wt.% Ni-12.5 wt.% Co-xC alloy changed with the carbon content was independent of the coefficient of thermal expansion. The Curie temperature changed linearly with the carbon content and was similar to the change of the coefficient of thermal expansion. Moreover, the coefficient of thermal expansion decreased when the ratio of saturation magnetization to Curie temperature ($\sigma_s/T_c$) increased, decreasing the Curie temperature and showed a specific relationship with the magnetic properties of the Fe-30 wt.% Ni-12.5 wt.% Co-xCInvar alloy.

Amorphous Cr-Ti Texture-inducing Layer Underlying (002) Textured bcc-Cr alloy Seed Layer for FePt-C Based Heat-assisted Magnetic Recording Media

  • Jeon, Seong-Jae;Hinata, Shintaro;Saito, Shin
    • Journal of Magnetics
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    • v.21 no.1
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    • pp.35-39
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    • 2016
  • $Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

  • Lee, Sun-Sook;Lee, Eun-Seok;Kim, Seok-Hwan;Lee, Byung-Kook;Jeong, Seok-Jong;Hwang, Jin-Ha;Kim, Chang-Gyoun;Chung, Taek-Mo;An, Ki-Seok
    • Bulletin of the Korean Chemical Society
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    • v.33 no.7
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    • pp.2207-2212
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    • 2012
  • Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

Performance Analysis of Low-level Radiation Shielding Sheet with Diamagnetic Nanoparticles

  • Cho, Jae-Hwan;Kim, Myung-Sam
    • Journal of Magnetics
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    • v.20 no.2
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    • pp.103-109
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    • 2015
  • In this study, the authors attempted to produce a medical radiation shielding fiber that can be produced at a nanosize scale and that is, unlike lead, harmless to the human body. The performance of the proposed medical radiation shielding fiber was then evaluated. First, diamagnetic bismuth oxide, an element which, among elements that have a high atomic number and density, is harmless to the human body, was selected as the shielding material. Next, 10-100 nm sized nanoparticles in powder form were prepared by ball milling the bismuth oxide ($Bi_2O_3$), the average particle size of which is $1-500{\mu}m$, for approximately 10 minutes. The manufactured bismuth oxide was formed into a colloidal solution, and the radiation shielding fabric was fabricated by curing after coating the solution on one side or both sides of the fabric. The thicknesses of the shielding sheets prepared with bismuth oxide were 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, and 1.0 mm. An experimental method was used to measure the absorbed dose and irradiation dose by using the lead equivalent test method of X-ray protection goods presented by Korean Industrial Standards; the resultant shielding rate was then calculated. From the results of this study, the X-ray shielding effect of the shielding sheet with 0.1 mm thickness was about 55.37% against 50 keV X-ray, and the X-ray shielding effect in the case of 1.0 mm thickness showed shielding characteristics of about 99.36% against 50 keV X-ray. In conclusion, it is considered that nanosized-bismuth radiation shielding fiber developed in this research will contribute to reducing the effects of primary X-ray and secondary X-ray such as when using a scattering beam at a low level exposure.

A Study on Robust Authentication and Privacy in Wireless LAN (무선랜 환경에서 사용자 인증 및 기밀성 강화 방안에 관한 연구)

  • Hong Seong-pyo;Lee Joon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.8
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    • pp.1768-1773
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    • 2005
  • The IEEE 802.1x standard provides an architectural framework which can be used various authentication methods. But, IEEE 802.1x also has vulnerabilities about the DoS, the session hijacking and the Man in the Middle attack due to the absence of AP authentication. In this paper, we propose a WLAN secure system which can offer a robust secure communication and a user authentications with the IEEE 802.1x framework. The user authentication on the WLAN secure system accomplishes mutual authentications between authentication severs, clients and the AP using PKI and prevents an illegal user from intervening in communication to disguise oneself as a client, the AP or authentication servers. Also, we guarantee the safety of the communication by doing secure communication between clients and the AP by the Dynamic WEP key distribution.

Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si$_{1-x}$C$_{x}$: H films (RF 스퍼터링으로 증착된 a-Si$_{1-x}$C$_{x}$: H 박막의 결합구조와 광학적 성질에 미치는 증착변수의 영향)

  • 한승전;권혁상;이혁모
    • Journal of Surface Science and Engineering
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    • v.25 no.5
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    • pp.271-281
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    • 1992
  • Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

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Effects of HA/TiN Coating on the Electrochemical Characteristics of Ti-Ta-Zr Alloys (Ti-Ta-Zr합금의 전기화학적 특성에 미치는 HA/TiN 코팅의 영향)

  • Oh, Mi-Young;Kim, Won-Gi;Choe, Han-Cheol
    • Korean Journal of Metals and Materials
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    • v.46 no.10
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    • pp.691-699
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    • 2008
  • Electrochemical characteristics of Ti-30Ta-xZr alloys coated with HA/TiN by using magnetron sputtering method were studied. The Ti-30Ta containing Zr(3, 7, 10 and 15wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and coating, and then coated with HA/TiN, respectively, by using DC and RF-magnetron sputtering method. The analyses of coated surface and coated layer were carried out by using optical microscope(OM), field emission scanning electron microscope(FE-SEM) and X-ray diffractometer(XRD). The electrochemical characteristics were examined using potentiodynamic (-1,500 mV~ + 2,000 mV) and A.C. impedance spectroscopy(100 kHz ~ 10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The microstructure of homogenized Ti-30Ta-xZr alloys showed needle-like structure. In case of homogenized Ti-30Ta-xZr alloys, a-peak was increased with increasing Zr content. The thickness of TiN and HA coated layer showed 400 nm and 100 nm, respectively. The corrosion resistance of HA/TiN-coated Ti-30Ta-xZr alloys were higher than that of the non-coated Ti-30TaxZr alloys, whic hindicate better protective effect. The polarization resistance($R_p$) value of HA/TiN coated Ti-30Ta-xZr alloys showed $8.40{\times}10^5{\Omega}cm^2$ which was higher than that of non-coated Ti-30Ta-xZr alloys.