• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.331-337
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• 2006

Cavity-type beam position monitors were developed in collaboration with KEK to use for the future accelerators such as international linear collider (ILC) or x-ray free electron laser (XFEL) in PAL. BPM components such as BPM cavity, beam tubes, waveguides and feedthroughs were assembled by brazing at the same time to reduce mechanical errors during the fabrication. There are four screwed pins around outer rim of the cavity for the tuning of cavity frequency and x-y isolation. The resonance frequency of BPM is 6.422 GHz, the inner diameter of cavity is 53.822 mm, and the range of mechanical adjusting is $+ / - 250{\mu}m$. The x-y isolation was measured better than -40 dB after tuned. Test results of signal forms, x-y isolations, sensitivities are satisfied within requirements for the KEK ATF2 beam line.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).