• Korean Journal of Materials Research
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• v.1 no.3
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• pp.168-174
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• 1991

Ti-silicide was deposited by sputtering the composite target($TiSi_{2.6}$) on single-Si wafers and oxide on them. The heat treatment temperatures by rapid thermal annealing(RTA) have been varied in the range of $600-850^{\circ}C$ for 20seconds. It was not until RTA temperature was $800^{\circ}C$ that a stable $TiSi_2$ was formed, and the value of resistivity of that phase was $27~29{\mu}{\Omega}-cm$, which seems a little higher than that formed by the reactive method. The result of x-ray diffraction peals showed that till $750^{\circ}C$, C49 $TiSi_2$ phase was dominant, but at $800^{\circ}C$, at last, the phase was transformed into a stable C54 $TiSi_2$ phase. And, the result of x-ray photoeletron spectroscopy(XPS) measurements showed that the composition ratio of Ti and Si was 2 1 in the case of specimens treated at $800^{\circ}C$, The surface roughness of $TiSi_2$, which was condidered a weak point, was improved to a superior value of $17{\pm}1nm$, therefore increasing the possibility of applying $TiSi_2$ to semiconductor devices.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.384-384
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• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1063-1067
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• 1995

The superconducting properties of YBa$_{2}$Cu$_{3}$$O_{7-x}$(YBaCuO) thin films prepared by laser ablation have been investigated. The x-ray diffraction patterns and surface morphology of the films were substantially different from one another. The compositional ratios of YBaCuO films were controlled by the conditions of the target-substrate distance. The YBaCuO films manufactured on MgO(100) substrate were indicated T$_{c}$(zero)=91.2 K, T$_{c}$(onset)=93 K, and J$_{c}$=3.5*10$^{5}$ A/cm$^{2}$(at 77.3K). The optimum conditions were found to be a substrate temperature of 710 .deg. C, a energy density of 2 J/cm$^{2}$, and a target-substrate distance of 60 mm in an oxygen partial pressure of 200 mTorr.0 mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Journal of radiological science and technology
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• v.16 no.1
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• pp.101-106
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• 1993

In order to assure safety of both patient and operator, and to provide uniform quality radiographs, it is necessary to perform periodic calibration of diagnostic X-ray equipment. A basic parameter of diagnostic equipment's and its image sharpness is the size(and shape the energy distribution) of the focal spot as viewed along the central X-ray beam. This size determines the resolution possible with the equipment and also determines the heat characteristics of an anode. A fine focus tube gives high resolution but causes high local heating of target. In past, the pin-hole and star pattern image measurement for evaluation of resolution have been widely used, but it produced blurring and inaccuracy of image. So newly inverted Ug-meter has advantage in more convenient measurement method and less out-put bias than other image measurement. The authors intended to compare measured focal size between Ug-meter and focal spot test tool, changed state from setting to now of units.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.136-141
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• 2015

We studied the compact anode design to develop 100 kW rotating anode X-ray tube with large focal spot 1.2 mm, small focal spot 0.6 mm and tube voltage 150 kV for large hospital digital radiography using computer thermal simulation. The larger thermal radiation effect in a high vacuum can reduce the temperature of anode so the method to increase the surface area of anode is investigated. The anode has the multi-tier shape at the back side of TZM body of anode and also bigger diameter of anode. The number of multi-tiers was varied from 6 to 15 and the diameter of anode was also varied from ${\Phi}74$ to ${\Phi}82$. From ANSYS transient thermal simulation result, we could obtain $1056.4^{\circ}C$ anode maximum temperature when applying 100 kW input power at 0.1 second on target focal track which is less than $1091^{\circ}C$ of the conventional 75 kW X-ray tube with reduced anode weight by 15.5% than the conventional anode. The compact anode of reduced anode weight is able to improve the unwanted noise when the rotor is rotating at high-speed and also reduce the rotational torque which the cost effective stator-coil is possible. It is believed that the anode with 15 ea multi-tiers using ${\Phi}82$ can satisfy with the specification of the anode heat capacity. From the results of this paper, it has been confirmed that the proposed compact anode can be used as the anode of 100 kW rotating anode X-ray tube for digital radiography.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.49-53
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• 1990

Laser plasma was generated by a 1 GW iodine photodissociation laser(λ=1.315${\mu}{\textrm}{m}$, E-12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in the vacuum chamber under 10-5Torr and several tens of laser shooting were necessary for sufficient exposure to the PBS resist. A speciman was put directly on the resist and located at a distance of 3cm from the X-ray source. The replicas of a mesh, spider's tread, a red blood cell were obtained by PBS resist and were analyzed by Nomarski and SEM. Two main effects of limitation in resolution, source size and Fresnel diffraction, are mentioned and compared with the experimental result. In this experiment, a resolution better than 1000A could be obtained.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of Radiation Protection and Research
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• v.12 no.1
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• pp.1-11
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• 1987

Central axis percentage depth-doses, P(%), were measured at the points from the 2.5cm depth of reference point to 20 cm depth with 2.5 cm interval. Distance from the X-ray target to the water phantom($30{\times}30{\times}30cm^3$) surface was 1 m, and at this point three different beam sizes of $5cm{\phi},\;10cm{\phi},\;and\;15cm{\phi}$ were used. While the X-ray tube voltage varied from 150 to 250 kV, the tube current remained constant at 5 mA. Absorbed dose rate in water, $\dot{D}_w$, was determined using the air kerma calibration factor, $N_k$, which was derived from the exposure calibration factor, $N_x$, of the NE 2571 ion chamber. The reference exposure rate, $\dot{X}_c$, was measured using the Exradin A-2 ion chamber calibrated at ETL, Japan. The half value layers of the X-rays determined to meet ETL calibration qualities. The absorbed dose rates determined at the calibration point were compared to the values obtained from Burlin's general cavity theory, and the percentage depth-dose values determined from $N_k$ showed a good agreement with the values of the published depth dose data(BJR Suppl. 17).