• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.439-444
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• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

• Analytical Science and Technology
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• v.9 no.1
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• pp.20-25
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• 1996

Trace levels of uranium and thorium in geologic samples are determined rapidly by a direct wavelength-dispersive X-ray fluorescence method. Relative intensity of scattered tube radiation was used as an internal standard to compensate for variations in instrumental operating characteristics. U and Th can be determined within a precision of ${\pm}10%$ and accuracy of ${\pm}15%$ or less with measuring times of 50 seconds for Th and 400 seconds for U, respectively. The results of XRF analysis were in good agreement with those of other methods such as nutron activation analysis and inductively coupled plasma atomic emission spectrometry.

• Journal of the Korean Society of Radiology
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• v.14 no.7
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• pp.907-913
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• 2020

There have been continuous controversies on medical X-ray protection and numerous researchers have been trying to prevent unnecessary exposure to radiation. As X-ray passes through the patient and obtains an image, it creates scattered ray due to interactions such as photoelectric effect and Compton scattering with the subject. As a result, both medical radiation staff and patient are exposed to unnecessary radiation on areas other than the target area. In response, this study will be assuming a body of a female, radiating X-ray on the phantom under the conditions of lumbar spine AP test, and measuring scattered ray around breasts and thyroid glands. Then, The experiment results were as follows. After application of non-shielding material, the average of scattered ray was 0.88 mR in thyroid measurement, 3.34 mR, Lt Axillary 3.54 mR, and Rt Axillary 3.03 mR in mamonary measurement but, After application of shielding material, the average of scattered ray was 0.16 mR in thyroid measurement, 0.60 mR, Lt Axillary 0.64 mR, and Rt Axillary 0.54 mR in mamonary measurement showing average scattered ray protection effect of about 82%. This study suggested the manufacturing method of a Jelly-type shielding material, identified the possibilities of researches on mixing various substances with radiology field, and verified the usability of the Jelly-type shielding material as a substitute for existing protection tools.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.137-137
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.50-50
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• 2011

The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3341-3347
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• 2010

A series of oxazolidinone-based strobilurin analogues were efficiently synthesized by the reaction of 3-(2-bromomethylphenyl) oxazolidin-2-one with 1-substituted phenyl-2H-pyrazolin-3-one. Their structures were confirmed and characterized by $^1H$-NMR, $^{13}C$-NMR, elemental analysis, and mass spectroscopy. In addition, the crystal structure of the target compound 3-(2-((1-phenyl-2H-pyrazol-3-yloxy)methyl)phenyl) oxazolidin-2-one was determined by single crystal X-ray diffraction. The bioassay results of these compounds indicated that some of the oxazolidin-2-one derivatives containing N-substituted phenyl 2H-pyrazol ring exhibited potential in vivo fungicidal activities against M. grisea at the dosage of $1\;g\;L^{-1}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.47-47
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• 2008

Cr and AlSi (Si=20 and 66 at.%) target들을 이용하여 Closed-field unbalanced magnetron sputtering (CFUBMS)으로 증착된 주기($\Lambda$)가 2.3 nm에서 8.0nm인 CrN/AlSiN multilayer coatings의 crystal structure, 화학적 조성, 및 기계적 특성을 glow discharge optical emission spectroscopy (GDOES), X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS) and nano-indenter 등의 분석장비를 이용하여 분석하였다. 고온안정성을 시험하기 위하여 $800^{\circ}C$와 $1000^{\circ}C$ 공기중 에서 30분 열처리하였다. CrN/AlSiN multilayer coatings의 고온안정성은 Si조성이 증가함에 따라 향상되었다. Si이 18.2 at.%함유된 coating이 가장 우수한 고온안정성을 갖고 있다.

• Bulletin of the Korean Chemical Society
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• v.14 no.1
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• pp.38-42
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• 1993

Factor analysis was applied to study the thermal decomposition of barium titanyl oxalate (BTO) which is used as the precursor of barium titanate. BTO was synthesized in $H_2O$ solvent and calcined at various temperatures. The X-ray diffraction patterns were obtained to make the data matrix of peak intensity vs. 2${\theta}$. Abstract factor analysis and target transformation factor analysis were applied to this data matrix. It has been found that the synthesized BTO consists of the crystals of $BaC_2O_4{\cdot}0.5H_2O\;and\;BaC_2O_4{\cdot}2H_2O$ as well as the amorphous solid of TiO-oxalate. The results also indicate that the BTO was transformed via $BaCO_3\;to\;BaTiO_3\;and\;Ba_2TiO_4$ during the thermal decomposition.