• 한국정보통신학회논문지
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• 제11권2호
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• pp.330-336
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• 2007

본 논문에서는 디지털 의료 영상 및 진단 분야 그리고 산업용으로도 활용 가능한 싱글 포톤 계수형 영상센서를 $0.18{\mu}m$ triple-well CMOS(Complementary Metal Oxide Semiconductor) 공정을 사용하여 설계하였다. 설계된 Readout 칩용 싱글 픽셀은 디지털 X-ray 이미지 센서모듈을 간단화 하기 위해 단일 전원전압을 사용하였으며, Preamplifier의 출력 전압인 signal voltage(${\Delta}Vs$)를 크게 하기 위해 Folded Cascode CMOS OP amp를 이용한 Preamplifier를 설계하였으며, 기존의 Readout 칩 외부에서 인가하던 threshold voltage를 Readout 칩 내부에서 생성해 줄 수 있도록 Externally Tunable Threshold Voltage Generator 회로를 새롭게 제안하였다. 그리고, Photo Diode에서 발생하는 Dark Current Noise를 제거하기 위한 Dark Current Compensation 회로를 제안하였으며, 고속 counting이 가능하고, layout 면적이 작은 15bit LFSR(Linear Feedback Shift Resister) Counter를 설계하였다.

• Journal of Radiation Protection and Research
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• 제19권1호
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• pp.37-50
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• 1994

X-선과 감마선의 에너지에 따른 선질특성과 선량 및 필름의 사진농도와의 관계를 이용한 필름배지선량계의 선량환산식을 실험적으로 체계화 하였고, 시간경과에 따른 잠상퇴행 특성과 방사선의 입사방향에 따른 방향특성을 실험적으로 조사하여 보정계수를 산출하였다. 본 연구에서 구한 선량환산식은 필름배지선량계의 기술기준인 성능판정 기준을 잘 만족시키는 것으로 나타났다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.71-74
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• 2003

Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1182-1190
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• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.108-108
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• 2009

ITO에 사용되는 주된 재료인 인듐의 bixbyite 구조는 TCOs의 전기적 특성에서 매우 중요한 것으로 알려져 있다. 때문에 인듐의 Bixbyite구조를 유지하면서 인듐의 사용량을 줄이기 위해 최적의 Solubility limit에 관해 연구하였다. 이를 위해 In2O3-ZnO-SnO2의 삼성분계 기본 조성에 두가지 물질을 추가로 첨가하여 첨가량에 따른 Solubility limit을 연구하였다. Solubility limit의 측정을 위해 X-ray Diffractometer(XRD)를 사용하였으며, 첨가 원소의 양이 증가할수록 TCOs target의 Latice parameter값은 작아졌다, SEM을 통한 미세구조의 관찰로 원소첨가에 따른 샘플의 소결에너지 변화를 분석할 수 있었다. 제작된 시편의 정성분석 및 Chemical binding Energy를 측정하기 위해 X-ray Photo Spectroscopy (XPS)를 이용하였으며, 전기적인 특성 측정을위해 4-Point prove mesurement 방법을 사용하였다.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1994년도 추계학술대회
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• pp.101-103
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• 1994

The film scanner that digitizes the conventional x-ray films is the necessary equipment in the transition period of going to the filmless hospital. We have developed the film scanner using laser. We have selected HeNe laser as light source. The polygonal mirror converts the point light source to line scanning light. In sensing part, the diffusing cylinder and 7 photo transistors converts the light signal which passing the film into the electric signal. With this scanner, we can scan successfully the conventional x-ray film by $1024\times1024$. Smaller the spot sire is, higher the resolution can be achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.