• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.249-254
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• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1470-1474
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• 2009

Thermal and photochemistry of methyl iodide ($CH_3I)\;adsorbed\;on\;D_2O$ ice film on Cu(111) at 100 K were studied using temperature-programmed desorption (TPD) time-of-flight mass spectrometry (TOF-MS), X-ray and ultraviolet photoelectron spectroscopies. On the basis of TPD, multilayer and monolayer $CH_3I$ molecules desorb from $D_2O$ ice layer at 120 and 130 K, respectively. Photo-irradiation at 100 K exhibits dramatic changes in the TPD and I $3d_{5/2}\;XPS\;of\;CH_3I$ on ice film, due to a dramatic dissociation of $CH_3I$. The dissociation is likely activated by solvated electrons transferred from the metal substrate during photo-irradiation. No other photo-initiated reaction products were found within our instrumental detection limit. During photo-irradiation, the $CH_3I$, $CH_3$ and I could be trapped (or solvated) in ice film by rearrangement (and self-diffusion) of water molecules. A newly appeared parent molecular desorption peak at 145 K is attributed to trapped $CH_3I$. In addition, the $CH_3$ and I may diffuse through ice and chemisorb on Cu(111), indicated by TPD and I $d_{5/2}$ XPS taken with photo-irradiation time, respectively. No molecular ejection was found during photo-irradiation at 100 K. The work functions for $CH_3I/Cu(111),\;D_2O/Cu(111)\;and\;CH_3I/D_2$O/Cu(111) were all measured to be about 3.9 eV, 1.0 eV downward shift from that of clean Cu(111).

• Journal of the Korean Society of Safety
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• v.21 no.3 s.75
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• pp.22-30
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• 2006

On this study, we developed the electrostatic eliminator for charged particles in manufacturing process. The characteristics of the electrostatic eliminator were investigated, which is two kinds. The first one is Electrical Corona Discharged Type Ionizer. The second one is Photo Ionizer in using soft X-ray. From the experiment, we have obtained the following results. In case of Electrical Corona Discharged Ionizer, neutralization efficiency of charged particles were approximately saturated to 98% over 6.0kV, but as it is non-explosion proof, can not be used in flammable particle treatment process. While in case of photo Ionizer in using soft X-Ray, neutralization efficiency of charged particles were approximately 95%, and more its structure is explosion proof, could be used in flammable particle treatment process.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1177-1181
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• 2014

A 2D grid-like (4, 4)-connected topology coordination polymer, $[Co(BTA)_2(H_2O)_2]_n$ (1), where HBTA = 2-(1H-benzotriazol-1-yl)acetic acid, has been synthesized by hydrothermal method and characterized by single crystal X-ray diffraction, IR spectroscopy, elemental analysis and surface photovoltage spectroscopy (SPS). X-ray diffraction analyses indicated that 1 displays octahedral metal centers with secondary building units (SBUs) [$Co(BTA)_2(H_2O)_2$] bridged by the $BTA^-$ ligands. In the crystal, the 2D supramolecular architecture is further supported by $O-H{\cdots}O$, $O-H{\cdots}N$, $C-H{\cdots}O$ hydrogen bonds and ${\pi}{\cdots}{\pi}$ stacking interactions. The SPS of polymer 1 indicates that there are positive response bands in the range of 300-600 nm showing photo-electric conversion properties. There are good relationships between SPS and UV-Vis spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Journal of Astronomy and Space Sciences
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• v.15 no.1
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• pp.59-64
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• 1998

Kim & Beuermann (1995, 1996)have developed a model for the propagation of X-rays from the accreting white dwarfthrough the infalling material and the re-emission of the energy deposited by photo-absorption in the optical (and UV) spectral range. By using this model, we calculate the profiles of the $H_{\gamma}$ emission-line spectrum of intermediate polars. Photoabsorption of X-ray by the infalling material is the dominant process in forming the observed energy-dependent rotational modulation of the X-ray flux. X-ray and optical modulations are sensitive to model parameters in different ways. In principle, these dependencies allow us to obtain improved insight into the accretion geometry of the intermediate polars. We present results of our calculations and compare them with the $H{\beta}$ line spectrum(Kim & Beuermann 1996).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.51-54
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• 2002

Recently, due to its better photosensitivity in X-ray, the amorphous selenium based photoreceptor is used on digital direct method conversion material. Compared to other photoconductive material, amorphous selenium has good X-ray response characteristic and low leakage current. It has many parameters of detecting X-ray response on selenium. Among of them, it is well known that manufacture of a-Se is the most basic element. In this paper, we fabricated two types of amorphous selenium sample which had time variable. The one was fabricated continuous deposition sample and the other was step by step sample. Thickness of sample was $300{\mu}m$ and top electrode was evaporated gold. We investigated the leakage current and photo current of them and analysed their electrical characteristics. For analyzing morphology of samples, SEM and surface was pictured. We found that step by step deposition method could be applied for novel fabricating amorphous selenium film.