• Title/Summary/Keyword: X-ray laser

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Formation of Dielectric Carbon Nitride Thin Films using a Pulsed Laser Ablation Combined with High Voltage Discharge Plasma (펄스 레이저 애블레이션이 결합된 고전압 방전 플라즈마 장치를 이용한 유전성 질화탄소 박막의 합성)

  • 김종일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.641-646
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    • 2003
  • The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

Single-phase Gallium Nitride on Sapphire with buffering AlN layer by Laser-induced CVD

  • Hwang Jin-Soo;Lee Sun-Sook;Chong Paul-Joe
    • Bulletin of the Korean Chemical Society
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    • v.15 no.1
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    • pp.28-33
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    • 1994
  • The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

Irradiation of Intense Characteristic X-rays from Weakly Ionized Linear Plasma

  • Sato, Eiichi;Hayasi, Yasuomi;Tanaka, Etsuro;Mori, Hidezo;Kawai, Toshiaki;Takayama, Kazuyoshi;Ido, Hideaki
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2002.09a
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    • pp.396-399
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    • 2002
  • Intense quasi-monochromatic x-ray irradiation from the linear plasma target is described. The plasma x-ray generator employs a high-voltage power supply, a low-impedance coaxial transmission line, a high-voltage condenser with a capacity of about 200 nF, a turbo-molecular pump, a thyristor pulse generator as a trigger device, and a flash x-ray tube. The high-voltage main condenser is charged up to 55 kV by the power supply, and the electric charges in the condenser are discharged to the tube after triggering the cathode electrode. The x-ray tube is of a demountable triode that is connected to the turbo molecular pump with a pressure of approximately 1 mPa. As electron flows from the cathode electrode are roughly converged to the molybdenum target by the electric field in the tube, the weakly ionized plasma, which consists of metal ions and electrons, forms by the target evaporating. In the present work, the peak tube voltage was almost equal to the initial charging voltage of the main condenser, and the peak current was about 20 kA with a charging voltage of 55 kV. When the charging voltage was increased, the linear plasma x-ray source grew, and the characteristic x-ray intensities of K-series lines increased. The quite sharp lines such as hard x-ray lasers were clearly observed. The quasi-monochromatic radiography was performed by a new film-less computed radiography system.

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Pulsed Laser Deposition $Na_{0.5}K_{0.5}NbO_3$ Thin Film (PLD 기법에 의한 $Na_{0.5}K_{0.5}NbO_3$ 박막 제작)

  • 최원석;문병무;조중래
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.33.1-35
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    • 2000
  • Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase $Na_{0.5}/K_{0.5}NbO_3$(NKN) thin film have been grown on $LaA1O_3$substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\varphi$ scan data evidence highly c-axis oriented along the [001] direction.

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Pulsed Laser Deposition $Na_{0.5}K_{0.5}NbO_{3}$ Thin Film (PLD 기법에 의한 $Na_{0.5}K_{0.5}NbO_{3}$ 박막 제작)

  • 최원석;문병무;조중래
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.33-35
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    • 2000
  • Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na$_{0.5}$K$_{0.5}$NbO$_3$ (NKN) thin film have been grown on LaA1O$_3$ substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\phi$ scan data evidence highly c-axis oriented along the [001] direction.ion.

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Laboratory Astrophysics using Intense X-ray from Free Electron Lasers

  • Chung, Moses
    • The Bulletin of The Korean Astronomical Society
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    • v.42 no.2
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    • pp.65.4-65.4
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    • 2017
  • The laboratory astrophysics is a new emerging field of basic sciences, and has tremendous discovery potentials. The laboratory astrophysics investigates the basic physical phenomena in the astrophysical objects in controlled and reproducible manners, which has become possible only recently due to the newly-established intense photon and ion beam facilities worldwide. In this presentation, we will introduce several promising ideas for laboratory astrophysics programs that might be readily incorporated in the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). For example, precise spectroscopic measurements using Electron Beam Ion Trap (EBIT) and intense X-ray photons from the PAL-XFEL can be performed to explore the fundamental processes in high energy X-ray phenomena in the visible universe. Besides, in many violent astrophysical events, the energy density of matter becomes so high that the traditional plasma physics description becomes inapplicable. Generation of such high-energy density states can be also be achieved by using the intense photon beams available from the PAL-XFEL.

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Precipitation of Eu3+ - Yb3+ Codoped ZnAl2O4 Nanocrystals on Glass Surface by CO2 Laser Irradiation

  • Bae, Chang-hyuck;Lim, Ki-Soo;Babu, P.
    • Current Optics and Photonics
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    • v.2 no.1
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    • pp.79-84
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    • 2018
  • We present a novel and simple method to enable spatially selective $ZnAl_2O_4$ nanocrystal formation on the surface of $B_2O_3$-$Al_2O_3$-ZnO-CaO-$K_2O$ glass by employing localized laser heating. Optimized precipitation of glass-ceramics containing nanocrystals doped with $Eu^{3+}$ and $Yb^{3+}$ ions was performed by controlling $CO_2$ laser power and scan speed. Micro-x-ray diffraction and transmission electron microscopy revealed the mean size and morphology of nanocrystals, and energy dispersive x-ray spectroscopy showed the lateral distribution of elements in the imaged area. Laser power and scan speed controled annealing temperature for crystalization in the range of 1.4-1.8 W and 0.01-0.3 mm/s, and changed the size of nanocrystals and distribution of dopant ions. We also report more than 20 times enhanced downshift visible emission under ultraviolet excitation, and 3 times increased upconversion emission from $Eu^{3+}$ ions assisted by efficient sensitizer $Yb^{3+}$ ions in nanocrystals under 980 nm excitation. The confocal microscope revealed the depth profile of $Eu^{3+}$ ions by showing their emission intensity variation.

Residual Stress Distribution of the Laser Welded Automotive Steel Sheets (레이져 용접된 자동차용 판재의 잔류응력분포)

  • 윤선진;김재도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1994.10a
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    • pp.163-168
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    • 1994
  • Zinc coated steel sheets have been widely used in automotive industry. High power laser welding has been used as an excellent welding means for thin sheets. The welding residual stress, which was brought in laser welding, causes making weak the mechanical strength. The purpose of this study is to get the residual stress distribution in various laser welding condition by FEM and verify the results by X-Ray diffraction. Welding residual stresses have been calculated by thermal elasto-plastic analysis using finite element method. Form the results, it can be known that the laser welding condition affects to distribution of the residual stress.

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Characterization and Classification of Pores in Metal 3D Printing Materials with X-ray Tomography and Machine Learning (X-ray tomography 분석과 기계 학습을 활용한 금속 3D 프린팅 소재 내의 기공 형태 분류)

  • Kim, Eun-Ah;Kwon, Se-Hun;Yang, Dong-Yeol;Yu, Ji-Hun;Kim, Kwon-Ill;Lee, Hak-Sung
    • Journal of Powder Materials
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    • v.28 no.3
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    • pp.208-215
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    • 2021
  • Metal three-dimensional (3D) printing is an important emerging processing method in powder metallurgy. There are many successful applications of additive manufacturing. However, processing parameters such as laser power and scan speed must be manually optimized despite the development of artificial intelligence. Automatic calibration using information in an additive manufacturing database is desirable. In this study, 15 commercial pure titanium samples are processed under different conditions, and the 3D pore structures are characterized by X-ray tomography. These samples are easily classified into three categories, unmelted, well melted, or overmelted, depending on the laser energy density. Using more than 10,000 projected images for each category, convolutional neural networks are applied, and almost perfect classification of these samples is obtained. This result demonstrates that machine learning methods based on X-ray tomography can be helpful to automatically identify more suitable processing parameters.

Study of Stoichiometrical Changes in Pulsed Laser Deposited $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) Thin Films (펄스 레이저 증착법으로 제작된 $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) 박막의 화학양론겅인 변화에 대한 연구)

  • Eun, Dong-Seog;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1309-1311
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    • 1998
  • $Pb_{1-x}La_xTi_{1-x/4}O_3$ (PLT(x)) thin film has been regarded as one of the most promising materials for applications of sensor, optic devices, and memory devices, because it exhibits various properties as changing the amount of Lanthanum component. So we have prepared PLT thin films on platinized silicon (actually Pt/Ti/$SiO_2$/Si) substrates in oxygen ambient by laser ablation. Energy dispersive X-ray (EDX) revealed that the stoichiometric thin films were fabricated.

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