• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3553-3560
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• 2010

A new hydrazone derivative compound has been synthesized and characterized by IR, $^1H$-NMR, $^{13}C$-NMR and UV-vis. spectroscopy techniques, elemental analysis and single-crystal X-ray diffraction (XRD). The new compound crystallizes in monoclinic space group C2/c. In addition to the crystal structure from X-ray experiment, the molecular geometry, vibrational frequencies and frontier molecular orbitals analysis of the title compound in the ground state have been calculated by using the HF/6-31G(d, p), B3LYP/6-311G(d, p) and B3LYP/6-31G(d, p) methods. The computed vibrational frequencies are used to determine the types of molecular motions associated with each of the observed experimental bands. To determine conformational flexibility, molecular energy profile of (1) was obtained by semi-empirical (AM1) calculation with respect to a selected degree of torsional freedom, which was varied from $-180^{\circ}$ to $+180^{\circ}$ in steps of $10^{\circ}$. Molecular electrostatic potential of the compound was also performed by the theoretical method.

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.565-568
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• 1998

Novel mononuclear metal complexes with the formula $[M(Ph_2PC_6H_4NC_3H_6NC_6H_4PPh_2)]$ (M=Pd (1); M=Pt (2)) were obtained when N,N'-bis[2'-(diphenylphosphino)phenyl]propane-1,3-diamine, I was mixed with cisdichlorobis(diethylsulfide)palladium and platinum in the presence of NEt3. Two mononuclear metal compounds with the fomula [M(Ph2PC6H4NH)(SEt2)Cl] (M=Pd (3); M=Pt (4)) were synthesized from $M(SEt_2)2Cl_2$ and N-(2'-diphenylphosphinophenyl)-4-amino-1,1,1,5,5, 5-hexafluoro-3-penten-2-one, II by the elimination reaction of hexafluoro pentenone. The X-ray single crystal structures of 1 and 4 are described. X-ray single crystal diffraction analyses reveal that compound 1 is a mononuclear palladium compound with P,N,N,P-coordination mode and 4 is a mononuclear platinum compound with P,N-coordination mode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.132-138
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• 2023

Doped and undoped-BiVO₄ samples with different elements (Li, Mg) and amounts were synthesized with a hydrothermal method. The synthesized samples were characterized using various techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis diffusion reflectance spectroscopy (UV-Vis DRS), and photoluminescence (PL) spectroscopy. Photocatalytic activity of the samples was evaluated by measuring the degradation of methyl blue (MB) under visible light irradiation. The results indicated that the incorporation of Mg and Li into BiVO₄ caused lattice distortion, the presence of surface hydroxyl groups, a narrower band gap, and a reduced recombination ratio of photo-induced electron-hole pairs. Notably, the photocatalytic activity of Mg5%-Li5% co-doped BiVO₄ sample exhibited a significant improvement compared to that of undoped BiVO₄ sample.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.255-262
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• 1998

This study investigated the crystallization behaviour of sealing amorphous material heat-treated by conventional and microwave heating source. From X-ray diffraction and SEM analyses, it was shown that microwave heat-treated sample had well-grown $PbTiO_3$crystals and the high degree of crystallinity inspite of its heat-treated condition of shorten time and lower temperature as compared with a conventionally heat-treated sample. It was assumed that microwaves inhibit the nucleation of $PbTiO_3$crystal in nucleation stage, but promote the growth of $PbTiO_3$crystal above the critical size of crystal due to enhanced diffusion effect within the sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.179-182
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• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.195-199
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• 2003

The $p-CdIn_2$$Te_4$single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_2$$Te_4$crystal and the various heat-treated crystals, the ($D^{\circ}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Cd, while the ($A^{\circ}$, X) emission completely disappeared in the $CdIn_2$T $e_4$:Cd. However, the ($A^{\circ}$, X) emission in the photoluminescence spectrum of the $CdIn_2$T $e_4$:Te was the dominant intensity like an as-grown $CdIn_2$T $e_4$crystal. These results indicated that the ($D^{\circ}$, X) is associated with $V_{Te}$ acted as donor and that the ($A^{\circ}$, X) emission is related to $V_{cd}$ acted as acceptor, respectively. The $p-CdIn_2$T $e_4$crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of ( $D^{\circ}$, $A^{\circ}$) emission and its TO phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{cd}$ or T $e_{int}$. Also, the In in the $CdIn_2$X$CdIn_4$was confirmed not to form the native defects because it existed in the stable form of bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.101-107
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• 1993

The crystallographic properties of the polycrystalline materials $Fe_{1+X}Eu_{1-X}O_{3}$(X = -0.06, 0.0, 0.1, 0.2, 0.3, 0.4) have been studied by the methods of X-ray diffraction and $M\"{o}ssbauer$ spectroscopy. The results showed that the samples with the composition range of $0.2{\leq}x{\leq}0.3$ had the garnet crystal phase, while those with $-0.06{\leq}x{\leq}0.0$ had the orthoferrite phase. However, with the tendency for the orthoferrite phase to convert into the trigonal phase via garnet phase as increasing the composition x, the orthoferrite-garnet and garnet-trigonal phase coexisted dominantly in the range of 0.0 < x < 0.2 and $0.4{\geq}x$, respectively. The analyzed results of $M\"{o}ssbauer$ spectrum indicated existence of some vacancies in the d-site of garnet phase, which can be related to the change of intensity in X-ray diffraction patterns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.107-110
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• 1997

LiMn$_2$O$_4$ is prepared by reacting stoichiometric mixture of LiOH . $H_2O$ and MnO$_2$ (mole ratio 1 ; 1) and heating at 80$0^{\circ}C$, $700^{\circ}C$ for 24h, 36h, 48h, 60h and 72h. We obtained through X-ray diffraction that lattice parameter varied as function of calcined temperature and time. Cathode active materials calcined at 80$0^{\circ}C$ for 36h, (111)/(311) peak ratio was 0.37. It showed good charge/discharge characteristics. When (111)/(311) peak ratio was 0.37, it was that crystal structure is formed very well. In the result of charge/discharge test, when heated at 80$0^{\circ}C$ for 36h, charge/discharge characteristics of LiMn$_2$O$_4$ is the best.