• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.240-243
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.1
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• pp.176-181
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• 2006

In this study, systematical investigations were carried out on crystal qualifies and optical properties of $ZnSe_{1-x}:Te_x$ (x=0.002-0.04) thin films frown by molecular beam epitaxy (MBE). The crystal qualifies and optical properties have been investigated by X-ray diffraction (XRD) and Photoluminescence (PL) measurements, respectively. From the XRD measurements, the crystallographic characteristics showed mediocre crystal quality with increasing the Te composition. From the PL measurements, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSe:Te epilayers. The efficient blue and green emission were attributed to the recombination of excitons trapped at isoelectronic isolated a single Te atom and $Te_n(n{\geq}2)$ clusters. respectively. The blue emission become dominant in Te tightly doped $ZnSe_{1-x}:Te_x$ $(Te=0.2\%)$ epilayers with increasing temperature. For the Te heavily doping condition $(Te=4.0\%)$, the dominant green emission could be observed at around 160K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• Journal of Biomedical Engineering Research
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• v.28 no.2
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• pp.306-309
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• 2007

PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.93-100
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• 2010

The calcium to phosphate ratio (Ca/P) in biphasic calcium phosphates powders using X-ray diffraction analysis (XRD) was characterized. The BCP powders with various stoichiometric Ca/P molar ratio were synthesized with coprecipitation process and calcination. Compositions of the powders with Ca/P molar ratio between 1.5 and 1.67 were subjected to starting Ca/P molar ratio, pH = 10, and thermal treatment up to $900^{\circ}C$. The structural, morphological and chemical characterizations for BCP powders with stoichiometric Ca/P ratio were carried out with scanning electron microscope (SEM) and inductively coupled plasma atomic emission spectroscopy (ICP-AES) and a phase quantification was investigated by XRD. The solubility of HAp, $\beta$-TCP, and BCP powders was tested in the phosphate buffer solution (PBS) at $36.5^{\circ}C$ and pH = 7.4.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.2111-2111
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• 2001

A chemoinfometrical method for evaluating the quantitative determination of crystallinity one polymorphs based on fourie-transformed near-infrared (FT-NIR) spectroscopy was established. A direct comparison of the data with the ones collected from using the and compared with the conventional powder X-ray diffraction method was performed. [Method] The pPure a and g forms of indomethacin (IMC) were prepared by reportedusing published methods. Six kinds of standard samples obtained by physically mixing of a and g forms. After the powder X-ray diffraction profiles of samples have been measured, the intensity values were normalized to against the intensity of silicon powder as the as an external standard. The calibration curves for quantification of crystal content were based upon the total relative intensity of four diffraction peaks from of the form g crystal. FT-NIR spectra of six calibration sample sets were recorded 5 times with the NIR spectrometer (BRAN+LUEBBE). Chemoinfometric analysis was performed on the NIR spectral data sets by applying the principal component regression (PCR). [Results] The relation between the actual and predicted polymorphic contents of form g IMC measured using by the X-ray diffraction method shows a good straight linen linear relation., and it has slope of 0.023, an intercept of 0.131 and a correlation coefficient of 0.986. PCR analyses wereis was performed based on normalized NIR spectra sets offer standard samples of known content of IMC g form. IMC. A calibration equation was determined to minimize the root mean square error of the predictionthe prediction. Figure 1 shows a plot of the calibration data obtained by NIR method between the actual and predicted contents of form g IMC. The predicted values were reproducible and had a smaller standard deviation. Figure 2 shows that the plot for the predicted transformation rate (%) of form a IMC to form g as measured by X-ray diffractomeoy against to those as measured by NIR method. The plot has a slope of 1.296, an intercept of 1,109, and a correlation coefficient of 0.992. The line represents a satisfactory correlation between the two predicted values of form g IMC content. Thus NIR spectroscopy is an effective method for the evaluation to the pharmaceutical products of quantitative of polymorph.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.243-248
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• 2010

Si-substituted biphasic calcium phosphates (Si-BCP) were prepared by co-precipitation method. X-ray diffraction and fourier transform infrared spectroscopy were used to characterize the structure of Si-BCP powders. The Si-BCP powders with various Ca/(P+Si) molar ratio were carried out on structural change of hydroxyapatite (HAp) and ${\beta}$-tricalcium phosphate ($\ss$-TCP). The in-vitro bioactivity of the Si-BCP powders was determined by immersing the powders in SBF solution, after that observing the chemical composition and morphology change by X-ray diffraction, scanning electron microscope and energy dispersive spectroscopy.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.129-132
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• 1992

The multiplicity factor, which is defined as the number of different planes in a form having identical interplanar spacing and identical intensity, is tabulated here for the eleven Laue groups on the basis of their symmetries.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.270-278
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• 1995

Nd : YAl3(BO3)4 (NYAB) single crystal has been developed for green laser. In this experiment, we found K2O/3MoO3/0.5B2O3 to be a suitable flux for NYAB crystal growth, and grew NYAB crystal by TSSG method using this flux. By varying the cooling rate of solution, seed orientation, and rotation speed, the effects of these growth conditions on the crystal quality and its morphology were examined. Suitable growth conditiions were a cooling rate slower than 2.4$^{\circ}C$/day, the rotation speed of 25~30 rpm, and the <001> seed orienttion. The phases of grown crystal, coexisting and volatile materials were investigated by X-ray diffraction. In addition, the possiblity of laser action was examined by UV analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.14-19
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• 2000

Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.