• Title/Summary/Keyword: X-ray crystal diffraction

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Growth and characterization of bulk GaN single crystals by basic ammonothermal method (Basic 암모노써멀 방법에 의한 벌크 GaN 단결정의 성장 및 특성)

  • Shim, Jang Bo;Lee, Young Kuk
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.2
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    • pp.58-61
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    • 2016
  • Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

Effect of DyFeO3 Addition on Crystal Structure and Ferrcelectricity of the BiFeO3-PbTiO3 System

  • Kim, Seong-Seog;Kwon, Jong-Uk;Cheon, Chae Il
    • Journal of the Korean Ceramic Society
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    • v.42 no.5 s.276
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    • pp.299-303
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    • 2005
  • The crystal structure and ferroelectricity of the $(1-x)BiFeO_3\;(BF)-xPbTiO_3$ (PT) ceramic system with the addition of $DyFeO_3$ (DF) have been investigated for attaining a high temperature piezoelectric material. This study is focused on the relation between crystal structure and ferroelectric property with the addition of DF over the phase boundary in the (1-x)BF-xPT system. Hysteresis curves of polarization-electric field at room temperature have been measured. The X-ray and neutron diffraction data were analyzed by the rietveld refinement method. The addition of 0.1 mole DF into BF-PT system greatly increases the ferroelectric remanant polarization Pr values, e.g. 17 ${\mu}C/cm^2$ in 0.6BF-yDF-(0.4-y)PT and 31${\mu}C/cm^2$ in 0.5BF-yDF-(0.5.y)PT, respectively. The improved Pr value has been discussed in relation with crystal structure and electrical property.

The Crystal Structure of Tolfenamic Acid $(C_{14}H_{12}ClNO_2)$, an Antiinflammatory Fenamate

  • Kim, Yang-Bae;Chung, Uoo-Tae;Park, Il-Yeong
    • Archives of Pharmacal Research
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    • v.19 no.2
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    • pp.160-162
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    • 1996
  • The structural analysis of tolfenamic acid, 2-[(3-chloro-2-methylphenyl)-amino]benzoic acid, was performed by single crystal X-ray diffraction technique. The compound was recrystallized from a mixture of ether and toluene in triclinic, space group $P2_1/c, \;with\; \partial=3.914(1), \; b=22.\; 020(2), \; c=14.271(1)\;{\AA}, \beta.=94.68(1)^{\circ}, $ and Z=4. The calculated density is $1.418 g/cm^3$. The structure was solved by the direct method and refined by full matrix least-squares procedure to the final R value of 0.039 for 1773 independent reflections. In the molecule, carboxyl group at the anthranilic acid is coplanar to the phenyl ring. The dihedral angle between the two aromatic rings of the molecule is $44.2^{\circ}$ The molecules are dirnerized through the intermolecular hydrogen bonds at the carboxyl group in the crystal.

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A Study on the Properties of Substituted Ferrite (Fe-Al-Ga-Si) (치환형 Ferrite (Fe-Al-Ga-Si)의 특성 연구)

  • Choi, Seung-Han
    • Korean Journal of Materials Research
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    • v.21 no.8
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    • pp.439-443
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    • 2011
  • The crystal structure and magnetic properties of a new solid solution type ferrite $(Fe_2O_3)_5-(Al_2O_3)_{3.4}-(Ga_2O_3)_{0.6}-SiO$ were investigated using X-ray diffraction and M$\"{o}$ssbauer spectroscopy. The results of the X-ray diffraction pattern indicated that the crystal structure of the sample appears to be a cubic spinel type structure. The lattice constant (a = 8.317 ${\AA}$) decreases slightly with the substitution of $Ga_2O_3$ even though the ionic radii of the Ga ions are larger than that of the Al ions. The results can be attributed to a higher degree of covalency in the Ga-O bonds than in the Al-O and Fe-O bonds, which can also be explained using the observed M$\"{o}$ssbauer parameters, which are the magnetic hyperfine field, isomer shift, and quadrupole splitting. The drastic change in the magnetic structure according to the Ga ion substitution in the $ (Fe_2O_3)_5(Al_2O_3)_{4-x}(Ga_2O_3)_xSiO$ system and the low temperature variation have been studied through a M$\"{o}$ssbauer spectroscopy. The M$\"{o}$ssbauer spectrum at room temperature shows the superpositions of two Zeeman patterns and a strong doublet. It shows significant departures from the prototypical ferrite and is comparable with the diluted ferrite. The doublet of spectrum at room temperature appears to originate from superparamagnetic clusters and also the asymmetry of the doublet appears to be caused by the preferred orientation of the crystallites. The M$\"{o}$ssbauer spectra below room temperature show various complicated patterns, which can be explained by the freezing of the superparamagnetic clusters. On cooling, the magnetic states of the sample were various and multi critical.

Mechanical alloying effect and structural observation of (V, Fe)-N amorphous alloy powders (기계적 합금화에 의한 (V, Fe)-N계 비정질 합금의 제조 및 구조변화)

  • 이충효;전성용;김지순
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.4
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    • pp.129-134
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    • 2004
  • In this study, we investigated the effect of a nitrogen atom on the amorphization of V-Fe alloy through solid-gas reaction during mechanical alloying (MA). MA by planetary ball mill of $V_{70}Fe_{30}$ elemental powders was carried out under the nitrogen gas atmosphere. Amorphization has been observed after 160 hours of ball milling in this case. The DSC spectrum for the mechanically alloyed ($V_{70}Fe$_{30}$)_{0.89}N_{0.11}$ powders exhibits a sharp exothermic peak due to crystallization at about $600^{\circ}C$. Structural transformation from the bcc crystalline to amorphous states was also observed through X-ray and neutron diffractions. We take a full advantage of a negligibly small scattering length of the V atom in the neutron diffraction measurement. During amorphization process the octahedral unit, which is typical of a polyhedron formed in any crystal structures, was preferentially destroyed and transformed into the tetrahedral unit. Futhermore, neutron diffraction measurements revealed that a nitrogen atom is selectively situated at a center of the polyhedron formed by V atoms.

Crystal Form of Cefuroxime axetil (세푸록심 악세틸의 결정형)

  • Kim, Bo-Yeon;Sohn, Young-Taek
    • Journal of Pharmaceutical Investigation
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    • v.37 no.1
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    • pp.23-26
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    • 2007
  • Two crystal forms of cefuroxime axetil were obtained by the recrystallization from different organic solvents and characterized by differential scanning calorimetry (DSC), X-ray powder diffraction (XRD). It was confirmed that two crystal forms are identical. The dissolution patterns of these two forms were also checked in 0.07 N HCl at $37{\pm}0.5^{\circ}C$, 100 rpm for 180 minutes. The transformation during storage was also studied.

Luminescent Characteristics of Eu2+- Doped Ca3MgSi2O8:Eu2+ White Phosphors for LED (백색 LED용 Ca3MgSi2O8:Eu2+ 백색 형광체의 발광특성)

  • Yu, Il
    • Korean Journal of Materials Research
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    • v.28 no.8
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    • pp.474-477
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    • 2018
  • $Ca_3MgSi_2O_8:Eu^{2+}$(x = 0.003, 0.005, 0.007, 0.01, 0.03 mol) white phosphors for Light Emitting Diodes(LED) are synthesized with different concentrations of $Eu^{2+}$ ions using a solid state reaction method. The crystal structures, surface and optical properties of the phosphors are investigated using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM) and photoluminescence(PL). The X-Ray Diffraction results reveals that the crystal structure of the $Ca_3MgSi_2O_8:Eu^{2+}$ is a monoclinic system. The particle size of $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors is about $1{\sim}5{\mu}m$, as confirmed by SEM images. The maximum emission spectra of the phosphors are observed at 0.01 mol $Eu^{2+}$ concentration. The decrease in PL intensity in the $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors with $Eu^{2+}$ concentration is interpreted by concentration quenching. The International Commission on Illumination(CIE) coordinate of 0.01 mol Eu doped $Ca_3MgSi_2O_8$ is X = 0.2136, Y = 0.3771.

Microstructural analysis of the single crystalline AlN and the effect of the annealing on the crystalline quality (단결정 AlN의 미세구조 분석 및 어닐링 공정이 결정성에 미치는 영향)

  • Kim, Jeoung Woon;Bae, Si-Young;Jeong, Seong-Min;Kang, Seung-Min;Kang, Sung;Kim, Cheol-Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.4
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    • pp.152-158
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    • 2018
  • PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

Growth and Photoluminescience Properties for $AgGaSe_2$ Single Crystal Thin Films ($AgGaSe_2$ 단결정 박막 성장과 광발광 특성)

  • Hong, Kwang-Joon;Yun, Seuk-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.159-160
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    • 2006
  • $AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

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Quantitative X-ray Diffraction Analysis of Synthetic Mineral Mixtures Including Amorphous Silica using the PONKCS Method (PONKCS 방법을 이용한 비정질 실리카 함유 인공광물혼합시료의 정량 X-선회절 분석)

  • Chon, Chul-Min;Lee, Sujeong;Lee, Sung Woo
    • Journal of the Mineralogical Society of Korea
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    • v.26 no.1
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    • pp.27-34
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    • 2013
  • X-ray powder diffraction is one of the most powerful techniques for qualitative and quantitative analysis of crystalline compounds. Thus, there exist a number of different methods for quantifying mineral mixtures using X-ray diffraction pattern. We present here the use of Rietveld and PONKCS (partial or no known crystal structure) methods for quantification of amorphous and crystallized mineral phases in synthetic mixtures of standard minerals (amorphous silica, quartz, mullite and corundum). Pawley phase model of amorphous silica was successfully built from the pattern of 100 wt% amorphous silica and internal standard-spiked samples by PONKCS approach. The average of absolute bias for quantities of amorphous silica was 1.85 wt%. The larger bias observed for lower quantities of amorphous silica is probably explained by low intensities of diffraction pattern. Averages of absolute bias for minerals were 0.53 wt% for quartz, 0.87 wt% for mullite and 0.57 wt% for corundum, respectively. The PONKCS approach achieved improved quantitative results compared with classical Rietveld method by using an internal standard.