• Title/Summary/Keyword: X-ray absorption

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Growth and optical conductivity properties for BaIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaIn2S4 단결정 박막 성장과 광전도 특성)

  • Jeong, Kyunga;Hong, Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.5
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    • pp.173-181
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

Therapeutic Effect of Prednisolone in Tuberculous Pleurisy -A prospective study for the prevention of the pleural adhesion- (결핵성 흉막염에서 프레드니솔론의 치료효과 -흉막유착 발생에 대한 전향적 연구-)

  • Lee, Byoung-Hoon;Jee, Hyun-Suk;Choi, Jae-Chul;Park, Yong-Bum;An, Chang-Hyeok;Kim, Jae-Yeol;Park, In-Won;Choi, Byung-Whui;Hue, Sung-Ho
    • Tuberculosis and Respiratory Diseases
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    • v.46 no.4
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    • pp.481-488
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    • 1999
  • Background: The routine application of the combined regimen of corticosteroid-antituberculosis therapy to the tuberculous pleurisy remains controversial. Steroid therapy to tuberculous pleurisy could be effective on the acceleration of absorption of pleural effusion and symptom improvement, but there has been debate about the effect of prednisolone on the prevention of pleural adhesion. So we studied the efficacy of combined regimen of prednisolone-antituberculosis therapy on the absorption of pleural effusion and prevention of pleural adhesion. Method: A prospective, randomized study was performed in 82 patients, 50 patients(non-steroid group) were treated with only antituberculosis regimen for 6 months and in 32 patients(steroid group) prednisolone(30mg/day) were administered in addition to antituberculosis regimen for one months and tapered for another month. The amount of pleural effusion was compared at the beginning of treatment, 2nd month, 6th month and final visit with chest X-ray findings which were graded from grade 0(complete absorption) to grade 6(near total haziness). Results: The amount of pleural effusion of steroid group at 2nd month, 6th month and final visit was lesser than that of non-steroid group(P<0.05). The incidence of the complete absorption of the pleural effusion was 3/32(9.4%) in steroid group, 1/50(2%) in non-steroid group at 2nd month after treatment; and 12/32(37.5%) in steroid group, 6/50(12%) in non-steroid group at 6th month after treatment(P<0.05). At final observation, the incidence of residual pleural thickening was 15/32(47%) in steroid group and 37/50(74%) in non-steroid group(P<0.05). No serious side effects were noted during the treatment with prednisolone. Conclusion: The administration of prednisolone in conjunction with antituberculosis chemotherapy improved the absorption of pleural effusion and decreased the residual pleural thickening.

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Growth and photocurrent study on the splitting of the valence band for $CuInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)범에 의한 $CuInSe_2$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong Myungseak;Hong Kwangjoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.6
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    • pp.244-252
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

The Combination therapy of Chinese traditional and Western medicine about Tuberculous exudative pleural effusion (결핵성삼출성뇌막염(結核性渗出性腦膜炎)의 중서의결합치료(中西醫結合治療) (중의잡지 중심)(中醫雜誌 中心))

  • Choi, Hae-Yun;Kim, Jong-Dae
    • The Journal of Internal Korean Medicine
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    • v.19 no.2
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    • pp.438-450
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    • 1998
  • Pleural effusion means the inflammation of pleura which has a majority of respiratory disease. The main clinical manifestation is pleural effusional pain, dyspnea, cough, fever, etc. and at present the Tuberculous pleural effusion has the most frequency in which exists exudate in our country. And during studying oriental medical treatment about Tuberculous exudative pleural effusional patient, we found the clinical case about The Combination therapy of Chinese traditional and Western medicine at journal of traditional Chinese Medicine and considered it would be help in oriental medical treatment, so we adjust and report now. This study was performed by analyzing the six papers reported centering around the clinical case of The Combination therapy of Chinese traditional and Western medicine in journal of traditional Chinese Medicine published between 1990-1996. As these papers have no mistakes on diagnosis because it obtained pleurocentesis, tuberculin test positive reaction on choicing clinical case, definite results on X-ray, ultrasound as well as clinical basis, so it considers an apt conclusion. The results were as follows: 1. Western medical treatment uses chemical remedy same with pulmonary tuberculosis, and in case of tubercular pleuritis, it needs thoracic duct pyorrhea, and according to simple exudation also operates therapheutic pleural paracentesis. 2. In case of hydrothorax absorption about tuberculous pleural effusion, prescription of purge the heat accumulated in the lung and eliminate the retention of fluid with powerful purgatives shows considerable effects. 3. The latter period treatment of tuberculous pleural effusion needs Supplement qi and active the collaterals, Nourishing yin and clearing heat in addition to Supporting healthy energy to eliminate evils. 4. In case of curing tuberculous pleural effusion, The Combination therapy of Chinese traditional and Western medicine shows more considerable effect than single western medical treatment in absorption of hydrothorax. 5. In case of curing tuberculous pleural effusion, The Combination therapy of Chinese traditional and Western medicine shows more considerable effect than single western medical treatment in prevention of disease reappearance. 6. In case of curing tuberculous pleural effusion, The Combination therapy of Chinese traditional and Western medicine shows more considerable effect than single western medical treatment in vitality recovery at the latter period of disease.

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The Effect of Thermal Annealing and Growth of Cdln2S4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 Cdln2S4 단결정 박막 성장과 열처리 효과)

  • 홍광준;이관교
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.923-932
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    • 2002
  • A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) = 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T+434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

The Effect of Thermal Annealing and Growth of CdGa2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 CdGa2Se4 단결정 박막 성장과 열처리 효과)

  • Hong, Myung-Seok;Hong, Kwang-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.10
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    • pp.829-838
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    • 2007
  • The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

The Effects of Na2CO3 on Early Strength of High Volume Slag Cement (대량치환 슬래그 시멘트의 초기강도에 미치는 Na2CO3의 영향)

  • Kim, Tae-Wan;Hahm, Hyung-Gil
    • Journal of the Korea Concrete Institute
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    • v.28 no.3
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    • pp.349-356
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    • 2016
  • This report presents the results of an investigation on the early strength development of pastes high volume slag cement (HVSC) activated with different concentration of sodium carbonate ($Na_2CO_3$). The ordinary Portland cement (OPC) was replaced by ground granulated blast furnace slag (GGBFS) from 50% to 90% by mass, the dry powders were blended before the paste mixing. The $Na_2CO_3$ was added at 0, 2, 4, 6, 8 and 10% by total binder (OPC+GGBFS) weight. A constant water-to-binder ratio (w/b)=0.45 was used for all mixtures. The research carried out the compressive strength, ultrasonic pulse velocity (UPV), water absorption and X-ray diffraction (XRD) analysis at early ages(1 and 3 days). The incase of mixtures, V5 (50% OPC + 50% GGBFS), V6 (40% OPC + 60% GGBFS) and V7 (30% OPC + 70% GGBFS) specimens with 6% $Na_2CO_3$, V8 (20% OPC + 80% GGBFS) and V9 (10% OPC + 90% GGBFS) specimens with 10% $Na_2CO_3$ showed the maximum strength development. The results of UPV and water absorption showed a similar tendency to the strength properties. The XRD analysis of specimens indicated that the hydration products formed in samples were CSH and calcite phases.

Photocurrent Study on the Splitting of the Valence Band and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Park, Chang-Sun;Hong, Kwang-Joon;Park, Jin-Sun;Lee, Bong-Ju;Jeong, Jun-Woo;Bang, Jin-Ju;Kim, Hyun
    • Journal of Sensor Science and Technology
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    • v.13 no.2
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    • pp.157-167
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

Influence of vegetable wax on the moisture strength development of inorganic binder (무기바인더의 내수강도 발현에 미치는 식물성 왁스의 영향)

  • Bae, Min A;Kim, Kyeong Ho;Lee, Man Sig;Baek, Jae Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.10
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    • pp.574-580
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    • 2020
  • An inorganic binder is eco-friendly because it can be cured at low temperatures and does not emit harmful gases. In addition, related research is progressing rapidly owing to the small defects in the core. On the other hand, inorganic binders based on silicates (SiO2-Na2O) have unique absorbent properties. This results in the absorption of moisture from the air and the weakening of the bonding force. In particular, the castings used in cast steel require high-strength properties because of the higher temperatures than aluminum castings. In this study, waxes containing ester groups were selected to improve the absorption of moisture of inorganic binders. The inorganic binder was characterized by X-ray fluorescence and thermogravimetric analysis-differential thermal analysis. The inorganic binder core strength was then evaluated. In the case of an inorganic binder containing wax, the water resistance increased to 216 N/㎠, confirming the up to 55% improvement in strength. Excellent casting characteristics were confirmed through steel castings.

Growth and photoluminescience propeties for $CuInSe_2$ single crystal thin film by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 $CuInSe_2$ 단결정 박막 성장과 점결함)

  • Hong, Kwang-Joon;Lee, Sang-Youl;Kim, Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.111-112
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    • 2005
  • To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

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