• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.371-376
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• 2014

The process of flip-chip bump bonding, Au wire bonding and encapsulation were sucessfully developed and modularized. The CdTe sensor and ROIC were optimally jointed together at $150^{\circ}C$ and $270^{\circ}C$ respectively under24.5 N for 30s. To make SnAg bump on ROIC easy to be bonded, the higher bonding temperature was established than CdTe sensor's. In addition, the bonding pressure was lowered minimally because CdTe Sensor is easier to break than Si Sensor. CdTe multi-energy sensor module observed were no electrical failures in the joints using developed flip chip bump bonding and Au wire bonding process. As a result of measurement, shearing force was $2.45kgf/mm^2$ and, it is enough bonding force against threshold force, $2kgf/mm^2s$.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.423-428
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• 2014

Digital X-ray imaging devices using a TFT based flat panel array has been used in medical field. But, recently, lots of research on the photon counting sensor has been reported. In this study, we evaluated the physical properties of the photoconductor by suggesting the standard and testing method for quantitative performance evaluation of photon counting x-ray imaging sensor. First, we measured the leakage current and the sensitivity of photon counting x-ray imaging sensor and we evaluated the characteristic of rising time for determining the signal shaping time. In addition, the set-up study was conducted on the basis of the IEC 62220-1-2 recommendations to define the number of incident photons per unit area. And the efficiency of the charge collection was also evaluated. As a result, the characteristic was measured as $200pA/mm^2$ of the leakage current, $7{\mu}C/cm^2R $ of the X-ray sensitivity, and $0.765{\mu}s$ of the rising time.

• Journal of Radiation Industry
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• v.9 no.1
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• Journal of Astronomy and Space Sciences
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• v.21 no.4
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• pp.329-342
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• 2004

In this paper, we present preliminary feasibility studies on three types of solar observation payloads for future Korean Science and Technology Satellite (STSAT) programs. The three candidates are (1) an UV imaging telescope, (2) an UV spectrograph, and (3) an X-ray spectrometer. In the case of UV imaging telescope, the most important constraint seems to be the control stability of a satellite in order to obtain a reasonably good spatial resolution. Considering that the current pointing stability estimated from the data of the Far ultraviolet Imaging Spectrograph (FIMS) onboard the Korean STSAT-1, is around 1 arc minutes/sec, we think that it is hard to obtain a spatial resolution sufficient for scientific research by such an UV Imaging Telescope. For solar imaging missions, we realize that an image stabilization system, which is composed of a small guide telescope with limb sensor and a servo controller of secondary mirror, is quite essential for a very good pointing stability of about 0.1 arcsec. An UV spectrograph covering the solar full disk seems to be a good choice in that there is no risk due to poor pointing stability as well as that it can provide us with valuable UV spectral irradiance data valuable for studying their effects on the Earth's atmosphere and satellites. The heritage of the FIMS can be a great advantage of developing the UV spectrograph. Its main disadvantage is that two major missions are in operation or scheduled. Our preliminary investigations show that an X-ray spectrometer for the full disk Sun seems to be the best choice among the three candidates. The reasons are : (1) high temporal and spectral X-ray data are very essential for studying the acceleration process of energetic particles associated with solar flares, (2) we have a good heritage of X-ray detectors including a rocket-borne X-ray detector, (3) in the case of developing countries such as India and Czech, solar X-ray spectrometers were selected as their early stage satellite missions due to their poor pointing stabilities, and (4) there is no planned major mission after currently operating Reuven Ramaty High-Energy Solar Spectroscopic Imager (RHESSI) mission. Finally, we present a preliminary design of a solar X-ray spectrometer covering soft X-ray (2 keV) to gamma ray (10 MeV).

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.10-14
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• 2003

In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65 ${\mu}m$-CsI:Na/30 ${\mu}m$-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ${\mu}m$ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below $400 pA/cm^2$ at 10 V/${\mu}m$. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2190-2194
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• 2024

The study investigates the dose-dependent direct X-ray sensing characteristics of Brucinium benzilate (BB) and N-acetylglycine (NAG) organic crystals. BB and NAG were prepared as a slurry and deposited as a thick film on a patterned metal electrode. The X-ray induced photocurrent response was examined for various exposure doses using an intraoral pulsed 70 keV X-ray machine connected to a source meter. Subsequently, the morphological properties and thickness of the thick films were analyzed using scanning electron microscopy (SEM). At a photon energy of 70 keV, the attenuation coefficient values for NAG and BB crystals were determined to be approximately 0.181 and 0.178 cm²/g, respectively. The X-ray stopping power of the crystals was measured using a suniray-2 X-ray imaging system. To evaluate the responsiveness of the sensors, the photocurrent sensitivity and noise equivalent dose rate (NED) were calculated for both thick films. The findings demonstrated a noteworthy capability of sensing low doses (mGy), thereby suggesting the potential application of these organic materials in X-ray sensor development.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.4
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• pp.94-101
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• 2011

Various kinds of medical imaging devices have been studied to develop periapical radiography. However, there are some problems such as high x-ray exposure rate and pains for patients because of the problems caused by intra-oral sensor based radiography system. In this study, a new concept of periapical radiography, intra oral X-ray tube and detector system, is introduced to solve these problems. This system is made up of miniature X-ray tube based on subminiature thermal electron or cold electron, CMOS based detector, and a body including automatic position and system control devices. In order to confirm the possibility of proposed new concept to periapical radiography, miniature x-ray tube from XOFT corporation is used to develop new x-ray system, and the performance evaluation of this system is performed according to collimator. Also, dental images are compared after acquiring both images from existing system versus new concept of system. As a result, new concept of system showed excellent image. Thus, it is considered that new concept of system will have a significant effect on medical imaging technology.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.12
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• pp.1704-1710
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• 2020

The high-energy X-ray imaging detector used for container inspection uses a thick scintillator to effectively acquire X-rays. X-ray incident on the scintillator is generally up to 9MeV. Therefore, to effectively collect X-ray, it is necessary to use a thick scintillator. To collect the light generated by the reaction between X-ray and scintillator, an optical-sensor must be combined with the scintillator. In this study, a study on the design conditions of the detector using a CdWO4 and a small sensor is described. To calculate the collected light according to the change of the scintillator thickness and the reflectance of surface, MCNP6 and DETECT2000 were used. As a result of calculating, it was confirmed that when the reflectance of the surface was low, it was appropriate to select a scintillator with a thickness of 15 to 20-mm, but as the reflectance increased, it was confirmed that it was appropriate to select a CdWO4 with a thickness of 25 to 30-mm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2369-2379
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• 2013

A CMOS x-ray line scan sensor which is used in both medical imaging and non-destructive diagnosis is designed. It has a pixel array of 512 columns ${\times}$ 4 rows and a built-in DC-DC converter. The pixel circuit is newly proposed to have three binning modes such as no binning, $2{\times}2$ binning, and $4{\times}4$ binning in order to select one of pixel sizes of $100{\mu}m$, $200{\mu}m$, and $400{\mu}m$. It is designed to output a fully differential image signal which is insensitive to power supply and input common mode noises. The layout size of the designed line scan sensor with a $0.18{\mu}m$ x-ray CMOS image sensor process is $51,304{\mu}m{\times}5,945{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.391-394
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• 2002

There has recently been much interest and research in developing digital x-ray systems based on using amorphous selenium(a-Se) photoconductors as the image receptor. The amorphous selenium layer that is currently being studied for use as an x-ray photoconductor is not pure a-Se but rather amorphous selenium alloyed with arsenic. We fabricated samples using the selenium and arsenic alloy with various concentrations of the arsenic. In this work, x-ray photoconductor using amorphous selenium alloyed with arsenic were fabricated with different concentrations of the arsenic (0.1 wt.%, 0.3wt.%, 0.5wt.%, 1wt.%, 1.5wt.%, 3wt.%, 5wt.%). The seven kind of samples was fabricated with a-Se alloyed with arsenic through vacuum thermal evaporation. We also investigate the arsenic concentration dependence on the device performance in radiation detector. The electric characteristics of radiation detector devices with changing additive ratio of the arsenic is performed by measuring the x-ray induced photocurrent and integrating it over time to find the total charge. The thickness of a-Se is $100{\mu}m$. Bias voltages $3V/{\mu}m$, $6V/{\mu}m$， $9V/{\mu}m$ are applied at the samples. As results, the net charge of a-Se 0.3% As sample is $526.0pC/mR/cm^2$ at $9V/{\mu}m$ bias. The net charge is decreased as with the increasing additive ratio of arsenic.