• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1125-1128
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• 2003

This paper presents the design method of a Colpitts type oscillator with coplanar waveguide(CPW) structures in the range of Ka-band frequency for transmitter and receiver modules. Series short stubs of CPW patterns provide inductances and capacitances in the range of Ka-band which can be expressed as a CLC-$\pi$ equivalent circuit. The experimentation has employed ro4003 substrates as a CPW substrate which has a dielectric constant of 3.38 and a signal and ground space of 100um. A method of momentum simulation for the CPW patterns has performed with an ADS software tool of Hewlett-Packard Corp. Inductance and capacitance circuits of a Colpitts oscillator was interconnected to a MESFET with CPW bend structures of including the input and output impedance matching circuits of the active transistor. Circuit parameters for impedance matching were determined through the network conversion to the equivalent length of CPW transmission lines by using T-network 1 $\pi$-network conversion circuit. A Colpitts oscillator was fabricated on the substrate of a area of 8.5mm x 17.4mm with a MESFET of Fujitsu FMM5704X and CPW series short stubs. The design suggested the possibility of realizing oscillators on a planar surface for the wireless system of tansmitter and receiver modules in the frequency range of 30GHz

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.1
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• pp.237-242
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• 2017

This paper presents development of the transponder system which provides an accurate train position, especially for supporting 400km/h high speed train. Here, we analyzed an operating frequency band of the transponder system which can be interoperable with the Eurobalise system already installed in Korea railroad as to be used for the automatic train protection (ATP). By investigating the power frequency band and its data frequency band of the transponder system, we presents the adoptable frequency band for the developed transponder system. Additionally, through the real testbed using HEMU-430X, we evaluate its performance requirement and shows interoperable operation with the Eurobalise system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.715-722
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• 2000

In this paper, the PLDRO is designed and implemented for X-band. It is comprised of tunable high Q resonator with a varactor diode for frequency tuning, loop filter and a 1/8 prescaler which up to 10GHz. Also, it is implemented a TCXO and a VCO signal into the phase detector and achieved a highly stable signal source. From the measurement, the designed PLDRO has the output power of 2.5dBm at 8GHz and phase noise of -64.33dBc at 10KHz offset from carrier. Its characteristic is 26 dBc. This PLDRO has much better temperature stability.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.10
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• pp.1131-1137
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• 2014

In this paper, oscillator with compact hairpin resonator is used to design the local oscillator of X-band radar system. The proposed hairpin resonator is minimized by increasing capacitance of line end of conventional one. By this method, size can be minimized about 40% compared with the conventional resonator and also can improve phase noise characteristic. The result of oscillator using proposed hairpin resonator is measured in oscillating frequency of 9.05 GHz, output power of 2.47 dBm, and phase noise of -101.4 dBc/Hz. The fabricated oscillator in this paper can minimize design and it's planar structure makes it easy to design MMIC.

• Korean Journal of Remote Sensing
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• v.25 no.1
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• pp.31-44
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• 2009

The objective of this study was to measure backscattering coefficients of paddy rice using a L-, C-, and X-band scatterometer system with full polarization and various angles during the rice growth period and to relate backscattering coefficients to rice growth parameters. Radar backscattering measurements of paddy rice field using multifrequency (L, C, and X) and full polarization were conducted at an experimental field located in National Academy of Agricultural Science (NAAS), Suwon, Korea. The scatterometer system consists of dual-polarimetric square horn antennas, HP8720D vector network analyzer ($20\;MHz{\sim}20\;GHz$), RF cables, and a personal computer that controls frequency, polarization and data storage. The backscattering coefficients were calculated by applying radar equation for the measured at incidence angles between $20^{\circ}$ and $60^{\circ}$ with $5^{\circ}$ interval for four polarization (HH, VV, HV, VH), respectively. We measured the temporal variations of backscattering coefficients of the rice crop at L-, C-, X-band during a rice growth period. In three bands, VV-polarized backscattering coefficients were higher than hh-polarized backscattering coefficients during rooting stage (mid-June) and HH-polarized backscattering coefficients were higher than VV-, HV/VH-polarized backscattering coefficients after panicle initiation stage (mid-July). Cross polarized backscattering coefficients in X-band increased towards the heading stage (mid-Aug) and thereafter saturated, again increased near the harvesting season. Backscattering coefficients of range at X-band were lower than that of L-, C-band. HH-, VV-polarized ${\sigma}^{\circ}$ steadily increased toward panicle initiation stage and thereafter decreased, and again increased near the harvesting season. We plotted the relationship between backscattering coefficients with L-, C-, X-band and rice growth parameters. Biomass was correlated with L-band hh-polarization at a large incident angle. LAI (Leaf Area Index) was highly correlated with C-band HH- and cross-polarizations. Grain weight was correlated with backscattering coefficients of X-band VV-polarization at a large incidence angle. X-band was sensitive to grain maturity during the post heading stage.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2004.04a
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• pp.23-27
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• 2004

Developing of electromagnetic wave absorbers for GHz frequency, we used cast Alnico magnets. It is the first research paper to show that electromagnetic wave absorbers with Alnico magnets have good reflectivity in the GHz frequencies. Especially in this study, we used recycled cast Alnico magnets for natural resources problems and natural environment problems. New electromagnetic wave absorbers developed in this study are useful for X-band and C-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1239-1247
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• 2012

In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

• Journal of Advanced Navigation Technology
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• v.28 no.2
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• pp.193-200
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• 2024

This paper describes the design and development of a transmit receiver module(TRM) for mounting on X-band SAR of the NEXTSat-2. The TRM generates the chirp signal with required bandwidth through the DDS in X-band and performs frequency conversion, combination for the signal to transmit and be received and frequency synthesis. Tx path of the TRM produces signals of total 28 bandwidths up to 96.8 MHz and has output signal level of more than + 9.37 dBm. Rx path of the TRM has minimum noise figure of 15.7 dB. The measurement results show that required requirements are satisfied. The TRM is installed on the NEXTSat-2 flight model(FM), launched by KSLV-II(Nuri) on May 23, 2023 and currently operational.

• The Journal of the Acoustical Society of Korea
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• v.18 no.1
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• pp.10-15
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• 1999

We have studied a method to design and fabricate the Intermediate Frequency(IF) band pass filter with low shape factor which is used for CDMA base station on the 35°Y-cut X-propagation Quartz substrate. In order to fabricate a device of the low shape factor for the IF SAW filter on this substrate, we employed apodization weighted type interdigital transducer(IDT) as an input and withdrawal weighted type IDT as an output by using impulse modelling method. Also, using the Kaiser-Bessel window function, we have adopted 2200pairs and 1000pairs of input and oueut IDT respectively to minimize the effect of ripple. Furthermore, the width and the space of IDT finger are 3.6 ㎛ and 3.5 ㎛ respectively. Thus, we can have optimal results when the IDT thickness is 6000Å in consideration of the ratio of SAW's wavelength while it's aperture is 2mm for impedance matching. The fabricated SAW filter for CDMA had the property of almost 115.2MHz of a center frequency, less then 1.27MHz of bandwidth, less than 1.3 of shape factor, - l5dB of out band attenuation insertion loss and -45dB of rejection band.