• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• 제20권9호
• /
• pp.906-913
• /
• 2009

In this paper, the design concept and implementation method of the X-band 4-bit($22.5^{\circ}$, $45^{\circ}$, $90^{\circ}$, $180^{\circ}$ BIT) diode phase shifter in the parallel plate waveguide are introduced. The simulated results of $11.25^{\circ}$, $22.5^{\circ}$ and $45^{\circ}$ dielectric phase shift layers using CST's MWS and Agilent's ADS are presented, and the measured results are compared with the simulated ones. The simulated phase shift errors at the center frequency are $0.6^{\circ}$, $0.7^{\circ}$, and $3.5^{\circ}$, respectively and the measured phase shift errors at the center frequency are $0.6^{\circ}$, $2^{\circ}$, and $5.5^{\circ}$, respectively. Also, the MWS simulated results of $22.5^{\circ}$ BIT and $45^{\circ}$ BIT phase shifter are presented and compared with the ADS simulated ones to verify the validity of the presented design concept and implementation method.

• The Journal of the Acoustical Society of Korea
• /
• 제19권2호
• /
• pp.33-39
• /
• 2000

We have studied to obtain the frequency characteristics of the Surface Acoustic Wave(SAW) bandpass filter, having low shape factor, it's interdigital transducer(IDT) was formed on the 35° Y-cut X-propagation Quartz substrate and was evaporated by Aluminium. And then, we performed computer-simulation by a simulator. And, we can design that the apodization weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have employed that the number of pairs of the input and output IDT are 2200 pairs and 1000pairs, respectively and used the Kaiser-Bessel window function in order to minimize the effect of ripple. And, while the width and the space of IDT's finger are 6㎛ m and 5.75㎛, respectively and we could obtain the resonable results when the IDT thickness was 6000Å in consideration of the ratio of SAW's wavelength, and IDT aperture is 2mm. Frequency response of the fabricated SAW bandpass filter has the property that the center frequency is about 70MHz, shape factor is less than 1.3, bandwidth at the 1.5dB is probably 1.3MHz, out-band attenuation is almost -45dB, insertion loss is 19dB and ripple in the width of bandpass is 1dB approximately. Therefore, these frequency characteristics of the fabricated SAW bandpass filter are agreed well with the designed values.

• Transactions on Electrical and Electronic Materials
• /
• 제12권2호
• /
• pp.51-55
• /
• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제18권8호
• /
• pp.1169-1175
• /
• 1993

Plasma spraying method was used to fabricated the microwave absorbing ferrite-silicon carbide on the aluminum-alloy of the fuselage of an aircraft to protect it from RADAR detection. In this paper 15[rm] instead of 34[rm], the mean size of SIC-powder for ferrite-silicon carbide surface films(I) was used. 50(Kg/h) Instead of 70(Kg/h), the powder feed and 100[mm] Instead of 80(mm), spray distance of spray parameters was used. This M/W absorbers were designed experimentally and fabricated trially, as a result of which the relative frequency bandwidth of 2.8% were obtained under the tolerance limits of the reflection coefficients lower than-10[dB], and the maximum absorption thickness becomes 0.5[mm], which is much thinner than that of the conventional ones.

• Composites Research
• /
• 제29권6호
• /
• pp.336-341
• /
• 2016

This paper conducted the study on the electromagnetic and mechanical applicability of CNT-coated glass fiber for wind blades. Large-size wind blade has the serious pending problems to meet the target, such as interfering radar signals, increasing weights, and increasing repair costs. In this paper, we are suggesting the CNT-coated glass fiber in order to overcome these problems. First, the CNTs were strongly coated on the surfaces of glass fiber by suggested coating process, and the CNT-coated glass fiber/epoxy composites were fabricated by Va-RTM process. We designed and fabricated a radar absorbing structure using the CNT-coated glass fiber, which showed over 90% radar absorbing performance between 8.3 and 12.1 GHz frequency. In addition, we confirmed the improvement of mechanical properties on the strength and modulus of tensile, compressive, and in-plane shear.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제17권6호
• /
• pp.580-588
• /
• 1992

Plasma-spraying was conducted to produced the microwave absorbing surface films on the alumi-num-alloy used for the fuselage to protect the aircraft against the RADAR detction. The surface films were produced by plasma-splaying the mecharucally mixed composite powders of the silicon carblde and Ni-Zn ferrite. This M /W absorbers were designed experimentally and fabricated trialty, as a result of which the rolative frequency bandwidth of 7.6 to 8.4% were obtained under the tolerance limits of the re-flection coefficients lower than -6dB(absorption ratio 75%), and the maximum absorption thickness becomes 0.5 to 0.5.imm, which Is much thinner than that of the conventional ones.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.461-461
• /
• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Journal of Astronomy and Space Sciences
• /
• 제34권4호
• /
• pp.303-314
• /
• 2017

With increased human activity in space, the risk of re-entry and collision between space objects is constantly increasing. Hence, the need for space situational awareness (SSA) programs has been acknowledged by many experienced space agencies. Optical and radar sensors, which enable the surveillance and tracking of space objects, are the most important technical components of SSA systems. In particular, combinations of radar systems and optical sensor networks play an outstanding role in SSA programs. At present, Korea operates the optical wide field patrol network (OWL-Net), the only optical system for tracking space objects. However, due to their dependence on weather conditions and observation time, it is not reasonable to use optical systems alone for SSA initiatives, as they have limited operational availability. Therefore, the strategies for developing radar systems should be considered for an efficient SSA system using currently available technology. The purpose of this paper is to analyze the performance of a radar system in detecting and tracking space objects. With the radar system investigated, the minimum sensitivity is defined as detection of a $1-m^2$ radar cross section (RCS) at an altitude of 2,000 km, with operating frequencies in the L, S, C, X or Ku-band. The results of power budget analysis showed that the maximum detection range of 2,000 km, which includes the low earth orbit (LEO) environment, can be achieved with a transmission power of 900 kW, transmit and receive antenna gains of 40 dB and 43 dB, respectively, a pulse width of 2 ms, and a signal processing gain of 13.3 dB, at a frequency of 1.3 GHz. We defined the key parameters of the radar following a performance analysis of the system. This research can thus provide guidelines for the conceptual design of radar systems for national SSA initiatives.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• 제48권5호
• /
• pp.326-332
• /
• 1999

In this paper, we designed and fabricated High-Tc Superconducting (HTS) microstrip bandpass filters using Stepped Impedance Resonators(SIR) and studied on their characteristics. The $high-T_c$ superconducting $Y_1Ba_2Cu_3O_{7-x}$ epitaxial films were deposited by Pulse Laser Deposition (PLD) system on MgO. The fabricated filters were designed so as to operate in Ku band with central frequency 17.25 GHz, bandwidth 2.896% and ripple 0.01 dB. These filters were composed of parallel coupled microstrip SIR of which impedance ratio (K) are 0.5, 1.5. In the measured response, HTS filters had showed insertion loss below -0.5 dB. For comparison with normal conducting filter, we fabricated the Au counterpart that consists of the resonators as K=1.5 in the same dimension and measured performance of the Au filter. In comparison, HTS filter designed optimally got superior response to gold conterpart.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제29권9호
• /
• pp.546-551
• /
• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.