• Title/Summary/Keyword: X-band

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The Band-Broadening Design of the Rotary Joint Transition for the X-Band Microwave Channel (X밴드 고주파 채널용 로터리 조인트 천이구조의 대역확장 설계)

  • Kim, Siok;Lee, Changhyeong;Han, Dajung;Roh, Donsuk;Kahng, Sungtek
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.3
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    • pp.557-562
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    • 2017
  • In this paper, we show the design of a rotary joint transition for the X-band channel in a rotatable microwave communication system. The transition seems complicated to make a channel between two coaxial cables through a cylindrical waveguide. To make a broad-band performance in the X-band with low insertion loss and return loss given the constraint on the length and radius of this complicated-looking cylindrical structure, Genetic Algorithm optimization is adopted to check the validity of an intensive parametric study in the design. The structure is fabricated and tested to show how valid the design method is as well as good frequency responses.

The Calculation of the Energy Band Gaps and Optical constants of Zincblende GaAs1-X NX on Temperature and Composition (온도 및 조성비 변화에 따른 질화물계 화합물 반도체 GaAs1-X NX의 에너지 밴드갭과 광학상수 계산)

  • Chung, Ho-Yong;Kim, Dae-Ik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.6
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    • pp.1213-1222
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    • 2018
  • The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

Radiation Characteristics of a S / X Dual Broad Band Patch Antenna with Shared Aperture Structure (개구면 공유 구조를 가지는 S / X 이중 광대역 패치 안테나의 방사 특성)

  • Kwak, Eun-Hyuk;Lee, Yong-Seung;Kim, Boo-Gyoun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.8
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    • pp.718-729
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    • 2015
  • A S / X dual broad band patch antenna with shared aperture structure is fabricated. A $2{\times}2$ perforated patch is used for S-band operation and a $2{\times}2$ patch antenna array is integrated in the $2{\times}2$ perforation for X-band operation. The measurement results of a S / X dual broad band patch antenna with shared aperture structure show the broad band characteristics larger than 20 % in both bands.

Analysis of Surface Current Measurement Based on X-band Radar Image (X-밴드 레이더 이미지 기반 표층해류 계측 분석)

  • Na-Yun Kang;Yu-Kyung Lee;Young-Jun Yang
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2022.11a
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    • pp.323-324
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    • 2022
  • This paper explains the comparison results of surface current measurement using X-band Radar image through analysis. Measurements were carried out from February 2022 using the X-band Radar for marin ships installed at Sokcho Beach. Based on the Korea Hydrographic and Oceanographic Agency ocean observation buoys, the accuracy of surface current(current speed) measurement was verified through comparison and analysis of measurement data.

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Estimation of Paddy Rice Growth Parameters Using L, C, X-bands Polarimetric Scatterometer (L, C, X-밴드 다편파 레이더 산란계를 이용한 논 벼 생육인자 추정)

  • Kim, Yi-Hyun;Hong, Suk-Young;Lee, Hoon-Yol
    • Korean Journal of Remote Sensing
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    • v.25 no.1
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    • pp.31-44
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    • 2009
  • The objective of this study was to measure backscattering coefficients of paddy rice using a L-, C-, and X-band scatterometer system with full polarization and various angles during the rice growth period and to relate backscattering coefficients to rice growth parameters. Radar backscattering measurements of paddy rice field using multifrequency (L, C, and X) and full polarization were conducted at an experimental field located in National Academy of Agricultural Science (NAAS), Suwon, Korea. The scatterometer system consists of dual-polarimetric square horn antennas, HP8720D vector network analyzer ($20\;MHz{\sim}20\;GHz$), RF cables, and a personal computer that controls frequency, polarization and data storage. The backscattering coefficients were calculated by applying radar equation for the measured at incidence angles between $20^{\circ}$ and $60^{\circ}$ with $5^{\circ}$ interval for four polarization (HH, VV, HV, VH), respectively. We measured the temporal variations of backscattering coefficients of the rice crop at L-, C-, X-band during a rice growth period. In three bands, VV-polarized backscattering coefficients were higher than hh-polarized backscattering coefficients during rooting stage (mid-June) and HH-polarized backscattering coefficients were higher than VV-, HV/VH-polarized backscattering coefficients after panicle initiation stage (mid-July). Cross polarized backscattering coefficients in X-band increased towards the heading stage (mid-Aug) and thereafter saturated, again increased near the harvesting season. Backscattering coefficients of range at X-band were lower than that of L-, C-band. HH-, VV-polarized ${\sigma}^{\circ}$ steadily increased toward panicle initiation stage and thereafter decreased, and again increased near the harvesting season. We plotted the relationship between backscattering coefficients with L-, C-, X-band and rice growth parameters. Biomass was correlated with L-band hh-polarization at a large incident angle. LAI (Leaf Area Index) was highly correlated with C-band HH- and cross-polarizations. Grain weight was correlated with backscattering coefficients of X-band VV-polarization at a large incidence angle. X-band was sensitive to grain maturity during the post heading stage.

A X-band 40W AlGaN/GaN Power Amplifier MMIC for Radar Applications (레이더 응용을 위한 X-대역 40W AlGaN/GaN 전력 증폭기 MMIC)

  • Byeong-Ok, Lim;Joo-Seoc, Go;Keun-Kwan, Ryu;Sung-Chan, Kim
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.722-727
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    • 2022
  • In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm2. It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

Persistent Scatterer Selection and Network Analysis for X-band PSInSAR (X-band PSInSAR를 위한 고정산란체 추출 및 네트워크 분석 기법)

  • Kim, Sang-Wan;Cho, Min-Ji
    • Korean Journal of Remote Sensing
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    • v.27 no.5
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    • pp.521-534
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    • 2011
  • The high-resolution X-band SAR systems such as COSMO-SkyMED and TerraSAR-X have been launched recently. In addition KOMPSAT-5 will be launched in the early of 2012. In this study we developed the new method for persistent scatterer candidate (PSC) selection and network construction, which is more suitable for PSInSAR analysis using multi-temporal X-band SAR data. PSC selection consists in two main steps: first, selection of initial PSCs based on amplitude dispersion index, mean amplitude, mean coherence. second, selection of final PSCs based on temporal coherence directly estimated from network analysis of initial PSCs. To increase the stability of network the Multi- TIN and complex network for non-urban area were addressed as well. The proposed algorithm was applied to twenty-one TerraSAR-X SAR of New Orleans. As a result many PSs were successfully extracted even in non-urban area. This research can be used as the practical application of KOMPSAT-5 for surface displacement monitoring using X-band PSInSAR.

Characteristics Measurement of Hyperelastic SMA Gear for Micro-jitter Attenuation of X-band Antenna of Compact Advanced Satellite (차세대중형위성 적용가능성 검토를 위한 X-band 안테나의 미소진동 저감용 초탄성 SMA 기어의 특성 측정)

  • Jeon, Young-Hyeon;Back, Hyeon-Gyu;Song, Da-Il;Kang, Eun-Su;Oh, Hyun-Ung
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.45 no.9
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    • pp.784-793
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    • 2017
  • A two-axis gimbal-type X-band antenna mounted on an observation satellite can efficiently transmit high-capacity image data to a ground station regardless of both the satellite position and the orbital motion. However, this X-band antenna induces unnecessary micro-jitter which can degrade the image quality of the high-resolution observation satellite. Therefore, to achieve the high-resolution image quality from the observation satellite, micro-jitters have been required to be isolated. In this study, to resolve aforementioned drawback, we proposed blade gear using a shape memory alloy (SMA) applied to azimuth stage of X-band antenna. To investigate the rotational basic characteristics of the proposed SMA blade gear, we performed rotational static loading test. Futhermore, to evaluate the cycle to failure of the gear, accelerated life test was conducted. The temperature test was conducted to confirm rotational basic characteristics at various temperature conditions. To verify the isolation performance for micro-jitter, we performed micro-jitter measurement test.

Band Lineup Types Based on Ge1-xSnx/Ge1-ySny(001) (Ge1-xSnx/Ge1-ySny(001)의 band lineup 유형)

  • 박일수;전상국
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.770-775
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    • 2002
  • We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.