• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.63-69
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• 2022

Vanadium dioxide shows a unique and interesting property of metal-insulator transition, which has attracted great attention from the viewpoints of fundamental materials science and industrial applications. In this study, the effect of Mg and W addition on the metal-insulator transition of VO₂ were investigated for the bulk materials that are prepared by spark plasma sintering. The X-ray diffraction analysis of the sintered specimens revealed that the lattice parameters barely change, and the secondary phases are present. The transition temperature of MIT appears in the range of 64.2-64.6℃, regardless of the impurity element and content. On the other hand, the addition of Mg and W alters the electrical conductivity, i.e., the electrical conductivity increases by a factor of up to 2.4 or decrease by a factor of up to 57.4 depending on the impurity type and its content. The thermal conductivity showed the values of 1.8~2.5 W/m·K below the transition temperature, and the values of 1.9~2.8 W/m·K above the transition temperature. These changes in electrical and thermal conductivities can be attributed to the combination of the change in charge carrier density, the impurities as scattering centers, and the change in microstructures.

• The Journal of Korean Society for Radiation Therapy
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• v.26 no.2
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• pp.265-272
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• 2014

Purpose : To reduce the radiation dose to the thyroid that is affected to scattered radiation, the shield was used. And we evaluated the shielding effect for the thyroid during whole brain radiation therapy. Materials and Methods : To measure the dose of the thyroid, 300cGy were delivered to the phantom using a linear accelerator(Clinac iX VARIAN, USA.)in the way of the 6MV X-ray in bilateral. To measure the entrance surface dose of the thyroid, five glass dosimeters were placed in the 10th slice's surface of the phantom with a 1.5 cm interval. The average values were calculated by measured values in five times each, using bismuth shield, 0.5 mmPb shield, self-made 1.0 mmPb shield and unshield. In the same location, to measure the depth dose of the thyroid, five glass dosimeters were placed in the 10th slice by 2.5 cm depth of the phantom with a 1.5 cm interval. The average values were calculated by measured values in five times each, using bismuth shield, 0.5 mmPb shield, self-made 1.0 mmPb shield and unshield. Results : Entrance surface dose of the thyroid were respectively 44.89 mGy at the unshield, 36.03 mGy at the bismuth shield, 31.03 mGy at the 0.5 mmPb shield and 23.21 mGy at a self-made 1.0 mmPb shield. In addition, the depth dose of the thyroid were respectively 36.10 mGy at the unshield, 34.52 mGy at the bismuth shield, 32.28 mGy at the 0.5 mmPb shield and 25.50 mGy at a self-made 1.0 mmPb shield. Conclusion : The thyroid was affected by the secondary scattering dose and leakage dose outside of the radiation field during whole brain radiation therapy. When using a shield in the thyroid, the depth dose of thyroid showed 11~30% reduction effect and the surface dose of thyroid showed 20~48% reduction effect. Therefore, by using the thyroid shield, it is considered to effectively protect the thyroid and can perform the treatment.

• Journal of the Mineralogical Society of Korea
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• v.27 no.1
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• pp.1-15
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• 2014

Probing the electronic structures of crystalline Mg-silicates at high pressure is essential for understanding the various macroscopic properties of mantle materials in Earth's interior. Quantum chemical calculations based on the density functional theory are used to explore the atomic configuration and electronic structures of Earth materials at high pressure. Here, we calculate the partial density of states (PDOS) and O K-edge energy-loss near-edge structure (ELNES) spectra for $MgSiO_3$ perovskite at 25 GPa and 120 GPa using the WIEN2k program based on the full-potential linearized projected augmented wave (FP-LPAW) method. The calculated PDOS and O K-edge ELNES spectra for $MgSiO_3$ Pv show significant pressure-induced changes in their characteristic spectral features and relative peak intensity. These changes in spectral features of $MgSiO_3$ Pv indicate that the pressure-induced changes in local atomic configuration around O atoms such as Si-O, O-O, and Mg-O length can induce the significant changes on the local electronic structures around O atoms. The result also indicates that the significant changes in O K-edge features can results from the topological densification at constant Si coordination number. This study can provide a unique opportunity to understand the atomistic origins of pressure-induced changes in local electronic structures of crystalline and amorphous $MgSiO_3$ at high pressure more systematically.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.48 no.1
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• pp.55-64
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• 2022

The potassium cream soap with fatty acid called cleaning foam has a crystal gel structure, and unlike an emulsion system, it is weak to shear stress and shows characteristics that are easily separated under high temperature storage conditions. The crystal gel structure of cleansing foams is significantly influenced by the nature and proportion of fatty acids, degree of neutralization, and the nature and proportion of polyols. In order to investigate the effect of these parameters on the crystal gel structure, a ternary system consisting of water/KOH/fatty acid was investigated in this study. The investigation of differential scanning calorimeter (DSC) revealed that the eutectic point was found at the ratio of myristic acid (MA) : stearic acid (SA) = 3 : 1 and ternary systems were the most stable at the eutectic point. However, the increase in fatty acid content had little effect on stability. On the basis of viscosity and polarized optical microscopy (POM) measurements, the optimum degree of neutralization was found to be about 75%. The system was stable when the melting point (T_m) of the ternary system was higher than the storage temperature and the crystal phase was transferred to lamellar gel phase, but the increase in fatty acid content had little effect on stability. The addition of polyols to the ternary system played an important role in changing the T_m and causing phase transition. The structure of the cleansing foams were confirmed through cryogenic scanning electron microscope (Cryo-SEM), small and wide angle X-ray scattering (SAXS and WAXS) analysis. Since butylene glycol (BG), propylene glycol (PG), and dipropylene glycol (DPG) lowered the T_m and hindered the lamellar gel formation, they were unsuitable for the formation of stable cleansing foam. In contrast, glycerin, PEG-400, and sorbitol increased the T_m, and facilitated the formation of lamellar gel phase, which led to a stable ternary system. Glycerin was found to be the most optimal agent to prepare a cleansing foam with enhanced stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.