• Membrane Journal
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• 제21권3호
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• pp.222-228
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• 2011

Poly(vinyl chloride)-g-poly(oxyethylene methacrylate) (PVC-g-POEM) graft copolymer was synthesized via atom transfer radical polymerization (ATRP) and used as an electrolyte for electrochromic device. Plasticized polymer electrolytes were prepared by the introduction of propylene carbonate (PC)/ethylene carbonate (EC) mixture as a plasticizer. The effect of salt was systematically investigated using lithium tetrafluoroborate ($LiBF_4$), lithium perchlorate ($LiClO_4$), lithium iodide (LiI) and lithium bistrifluoromethanesulfonimide (LiTFSI). Wide angle X-ray scattering (WAXS) and differential scanning calorimetry (DSC) measurements showed that the structure and glass transition temperature ($T_g$) of polymer electrolytes were changed due to the coordinative interactions between the ether oxygens of POEM and the lithium salts, as supported by FT-IR spectroscopy. Transmission electron microscopy (TEM) showed that the microphase-separated structure of PVC-g-POEM was not greatly disrupted by the introduction of PC/EC and lithium salt. The plasticized polymer electrolyte was applied to the electrochromic device employing poly(3-hexylthiophene) (P3HT) conducting polymer.

• Journal of the Korean Magnetics Society
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• 제16권6호
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Radiation Oncology Journal
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• 제13권1호
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• pp.95-100
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• 1995

Purpose : To evaluate the effect on surface dose due to Aquaplast used for immobilizing the patients with head and neck cancers in photon beam radiotherapy Materials and Methods: To assess surface and buildup region dose for 6MV X-ray from linear accelerator(Siemens Mevatron 6740), we measured percent ionization value with the Markus chamber model 30-329 manufactured by PTW Frieburg and Capintec electrometer, model WK92. For measurement of surface ionization value, the chamber was embedded in $25{\times}25{\times}3cm^3$ acrylic phantom and set on $25{\times}25{\times}5cm^3$ polystyrene phantom to allow adequate scattering. The measurements of percent depth ionization were made by placing the polystyrene layers of appropriate thickness over the chamber. The measurements were taken at 100cm SSD for $5{\times}5cm^2$, $10{\times}10cm^2$ and $15{\times}15cm^2$ field sizes, respectively. Placing the layer of Aquaplast over the chamber, the same procedures were repeated. We evaluated two types of Aquaplast: 1.6mm layer of original Aquaplast(manufactured by WFR Aquaplast Corp.) and transformed Aquaplast similar to moulded one for immobilizing the patients practically. We also measured surface ionization values with blocking tray in presence or absence of transformed Aquaplast. In calculating percent depth dose, we used the formula suggested by Gerbi and Khan to correct overresponse of the Markus chamber. Results : The surface doses for open fields of $5{\times}5cm^2$, $10{\times}10cm^2$, and $15{\times}15cm^2$ were $79\%$, $13.6\%$, and $18.7\%$, respectively. The original Aquaplast increased the surface doses upto $38.4\%$, $43.6\%$, and $47.4\%$, respectively. For transformed Aquaplast, they were $31.2\%$, $36.1\%$, and $40.5\%$, respectively. There were little differences in percent depth dose values beyond the depth of Dmax. Increasing field size, the blocking tray caused increase of the surface dose by $0.2\%$, $1.7\%$, $3.0\%$ without Aquaplast, $0.2\%$, $1.9\%$, $3.7\%$ with transformed Aquaplast, respectively. Conclusion: The original and transformed Aquaplast increased the surface dose moderately. The percent depth doses beyond Dmax, however, were not affected by Aquaplast. In conclusion, although the use of Aquaplast in practice may cause some increase of skin and buildup region dose, reductioin of skin-sparing effect will not be so significant clinically.

• Journal of Sensor Science and Technology
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• 제6권4호
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.386-386
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• 2012

For white light emitting diode (LED) applications, it has been reported that Y3Al5O12:Ce3+ (YAG:Ce) in nano-sized phosphor performs better than it does in micro-sized particles. This is because nano-sized YAG:Ce can reduce internal light scattering when coated onto a blue LED surface. Recently, there have been many reports on the synthesis of nano-sized YAG particles using bottom-up method, such as co-precipitation method, sol-gel process, hydrothermal method, solvothermal method, and glycothermal method. However, there has been no report using top-down method. Top-down method has advantages than bottom-up method, such as large scale production and easy control of doping concentration and particle size. Therefore, in this study, nano-sized YAG:Ce phosphors were synthesized by a high energy beads milling process with varying beads size, milling time and milling steps. The beads milling process was performed by Laboratory Mill MINICER with ZrO2 beads. The phase identity and morphology of nano-sized YAG:Ce were characterized by X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM), respectively. By controlling beads size, milling time and milling steps, we synthesized a size-tunable and uniform nano-sized YAG:Ce phosphors which average diameters were 100, 85 and 40 nm, respectively. After milling, there was no impurity and all of the peaks were in good agreement with YAG (JCPDS No. 33-0040). Luminescence and quantum efficiency (QE) of nano-sized YAG:Ce phosphors were measured by fluorescence spectrometer and QE measuring instrument, respectively. The synthesized YAG:Ce absorbed light efficiently in the visible region of 400-500 nm, and showed single broadband emission peaked at 550 nm with 50% of QE. As a result, by considering above results, high energy beads milling process could be a facile and reproducible synthesis method for nano-sized YAG:Ce phosphors.

• Progress in Medical Physics
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• 제6권2호
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• pp.51-60
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• 1995

Lithium Fluoride (LiF; TLD-100) crystal chips are normally used as thermolu minescence dosimeters (abbreviated as NC-100) for estimating the absorbed dose to the skin of a patient or in a solid water phantom undergoing radiotherapy with megavoltage photon (6 and 15MV) beams. In general, investigation has revealed a reduction in the sensitivity of NC-100 chips after many runs through heating cycles. A TLD-100 chip laminated with gold plate (140${\mu}{\textrm}{m}$) on the upper surface layer of its face toward the photon beam (abbreviated as GC-100) has properties different from that of a NC-100 chip activated by incident photons and contaminant electrons with various lower energies coming from the gantry head and air. Activation of the valence band electrons of GC-100 chips by incident photons, positrons and electrons-which come from the gold plate by mainly pair production process and partly from Compton scattering-results in more enhanced signal intensity, higher response per monitor unit, as well as a good linearity with monitor units and independence of dose rate. Since the electron beams (6 and 15 MeV) do not have the probability of pair production process with gold plate, there is only a small difference (about a 3.3％ increase for 15 MeV) in the signal gaps in the TL readout for electron beams between GC- and NC-100 chips. The 3.3％ increase is entirely due to the buildup caused by the 140 m gold plate. The sensitivity of GC-100 chips is much more susceptible to high energy photon beams than electron one because of pair production. The interaction of high energy photon with a material of high atomic number, such as the good plate in this case, results in a considerably significant probability of pair production. The gold plate on the NC-100 chips acts as not only an intensifier of their signals but also acts as a filter of contaminant electrons in therapeutic high energy X-ray beams.

• Journal of Microbiology and Biotechnology
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• 제21권8호
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• pp.808-817
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• 2011

Because of its elevated cellulolytic activity, the filamentous fungus Trichoderma harzianum has a considerable potential in biomass hydrolysis applications. Trichoderma harzianum cellobiohydrolase I (ThCBHI), an exoglucanase, is an important enzyme in the process of cellulose degradation. Here, we report an easy single-step ion-exchange chromatographic method for purification of ThCBHI and its initial biophysical and biochemical characterization. The ThCBHI produced by induction with microcrystalline cellulose under submerged fermentation was purified on DEAE-Sephadex A-50 media and its identity was confirmed by mass spectrometry. The ThCBHI biochemical characterization showed that the protein has a molecular mass of 66 kDa and pI of 5.23. As confirmed by smallangle X-ray scattering (SAXS), both full-length ThCBHI and its catalytic core domain (CCD) obtained by digestion with papain are monomeric in solution. Secondary structure analysis of ThCBHI by circular dichroism revealed ${\alpha}$- helices and ${\beta}$-strands contents in the 28% and 38% range, respectively. The intrinsic fluorescence emission maximum of 337 nm was accounted for as different degrees of exposure of ThCBHI tryptophan residues to water. Moreover, ThCBHI displayed maximum activity at pH 5.0 and temperature of $50^{\circ}C$ with specific activities against Avicel and p-nitrophenyl-${\beta}$-D-cellobioside of 1.25 U/mg and 1.53 U/mg, respectively.

• Journal of radiological science and technology
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• 제21권2호
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• pp.36-42
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• 1998

Treatment of a large diseased area with electron often requires the use of two or more adjoining fields. In such cases, not only electron beam divergence and lateral scattering but also fields overlapping and separation may lead to significant dose inhomogeneities(${\pm}20%$) at the region of junction of fields. In this study, we made Acrylic Electron Wedges to improve dose inhomogeneities(${\pm}5%$) in these junction areas and to apply it to clinical practices. All measurements were made using 6, 9, 12, 16, 20 MeV Electron beams from a linear accelerator for a $10{\times}10\;cm$ field at 100cm of SSD. Adding a 1 mm sheet of acryl gradually from 1 mm to 15 mm acquires central axis depth dose beam profile and isodose curves in water phantom. As a result, for all energies, the practical range was reduced by approximately the same distance according to the acryl insert, e.g. a 1 mm thick acryl insert reduces the practical range by approximately 1 mm. For every mm thickness of acryl inserted, the beam energy was reduced to approximately 0.2 MeV. These effects were almost Independent of beam energy and field size. The use of Acrylic Electron Wedges produced a small increase(less than 3%) in the surface dose and a small increase(less than 1%) in X-ray contamination. For acryl inserts, thickness of 3 mm or greater, the penumbra width increased nearly linear for all energies and isodose curves near the beam edge were nearly parallel with the incident beam direction at the point of penumbra width($35\;mm{\sim}40\;mm$). We decide heel thickness and angle of the wedge at this point. These data provide the information necessary to design Acrylic Electron Wedge which can be used to improve dose uniformity at electron field junctions and it will be effectively applied to clinical practices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.66-66
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• 2008

본 연구에서는 ITO/Ag/ITO 다층 박막을 유기발광소자와 플렉시블 광전소자의 전극으로 적용하기 위하여 선형 대항 타겟 스퍼터(Linear facing target sputter) 시스템을 이용하여 성막하였고, ITO/Ag/ITO 다층박막의 전기적, 광학적, 구조적 특성을 분석하였다. 선형 대항 타겟 스퍼터 시스템은 강한 일방항의 자계와 타겟에 걸린 음극에 의해 전자의 회전, 왕복 운동이 가능해 마주보는 두 ITO 타겟 사이에 고밀도의 플라즈마를 구속 시켜 플라즈마 데미지 없이 산화물 박막을 성막시킬 수 있는 장치이다. 대항 타겟 스퍼터 시스템을 이용하여 성막한 ITO 전극을 DC power, working pressure, Ar/O2 ratio 에 따른 특성을 각각 분석하였다. glass 기판위에 최적화된 ITO 전극을 bottom layer로 두고, bottom ITO layer 위에 thermal evaporation 을 이용하여 Ag 박막을 6~20nm의 조건에 따라 두께를 다르게 성막하고, Ag 박막을 성막한 후에 다시 bottom ITO 전극과 같은 조건으로 ITO 전극을 top layer로 성막 하였다. 두 비정질의 ITO 전극 사이에 매우 앓은 Ag 박막을 성막 함으로 해서 glass 기판위에 ITO/Ag/ITO 다층 박막전극은 매우 낮은 저항과 높은 투과도를 나타낸다. ITO/Ag/ITO 박막의 전기적 광학적 특성을 보기 위해 hall measurement와 UV/visible spectrometer 분석을 각각 진행하였다. ITO/Ag/ITO 다층 박막 전극이 매우 얇은 두께임에도 불구하고 $4\Omega$/sq.의 낮은 면저항과 85%의 높은 투과도를 나타내는 이유는 ITO/Ag/ITO 전극 사이에 있는 Ag층의 표면 플라즈몬 공명 (SPR) 현상으로 설명할 수 있다. ITO/Ag/ITO 전극의 Ag의 거동을 분석 하기위해 FESEM분석과 synchrotron x-ray scattering 분석을 하였다. ITO/Ag/ITO 전극의 Ag층이 islands의 모양에서 연속적으로 연결되는 변화과정 중에 SPR현상이 일어남을 알 수 있다. 여기서, 대항 타겟 스퍼터 시스템을 이용하여 성막한 ITO/Ag/ITO 다층박막을 OLED 또는 inverted OLEDs의 top 전극으로의 적용 가능성을 보이고 있다.