• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.384-384
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• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• 플랜트 저널
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• 제16권3호
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• pp.47-52
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• 2020

본 연구에서는 알루미늄으로 제작된 심해 장비의 부식 저항 능력 향상시키기 위해 알루미늄 부식 방지 방법과 측정방법을 조사하였다. 조사된 부식 방지 방법은 Cathodic Protection(음극화 보호), Conversion Coating, Anodizing, 및 Organic Coating이었다. 그리고 간단하게 조사된 측정 방법은 Scanning Electron Microscope (SEM), Electrochemical Impedance Spectroscopy (EIS), Glow discharge optical emission spectrum spectroscopy (GD-OES), Fourier Transform Infrared Spectroscopy (FT-IR), Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS), Scanning Vibrating Electrode Technique (SVET), Contact Angle(접촉각), Interfacial Tension (경계면 장력)이었다. 알루미늄 부식을 방지하기 위해 널리 사용되는 방법은 Anodizing과 Organic Coating이었으며, 부식 측정을 위해서는 여러 방법들이 골고루 사용되었다. 그 중 많이 사용되는 방법은 표면의 구조를 관찰하 위한 SEM과 부식 저항 능력을 측정하기 위한 접촉각 측정이었다.

• 전자공학회논문지
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• 제50권7호
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• pp.115-121
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• 2013

본 연구에서는 TiInZnO(TiIZO)를 채널층으로 하는 thin film transistors(TFTs)를 제작하였다. TiIZO 층은 InZnO(IZO)와 Ti target을 이용하여 RF-magnetron co-sputtering system 방식으로 상온에서 증착하였으며, 어떠한 열처리도 하지 않았다. Ti의 첨가가 어떠한 영항을 주는지 연구하기 위해 X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) 분석을 시행하였으며, 전기적인 특성을 측정하였다. Ti의 첨가는 Ti target의 rf power 변화에 따라 달리하였다. Ti의 첨가가 전류점멸비에 큰 영향을 주는 것을 확인하였고, 이것은 Ti의 산화력이 In과 Zn보다 뛰어나 산소결함자리의 형성을 억제하기 때문이다. Ti의 rf power가 40W일 때 가장 좋은 특성을 나타냈으며, 전류점멸비, 전자이동도, 문턱전압, subthreshold swing이 각각 $10^5$, 2.09 [$cm^2/V{\cdot}s$]. 2.2 [V], 0.492 [V/dec.]로 측정되었다.

• 한국결정성장학회지
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• 제22권2호
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• pp.84-91
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• 2012

Single and few-layer graphene nanosheets (GNs) have successfully synthesized by a modified Hummer's method followed by chemical reduction of exfoliated graphene oxide (GO) in the presence of hydrazine monohydrate. GO and GNs were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffractions (XRD), Raman spectroscopy, Transmission electron microscopy (TEM), Atomic force microscopy (AFM), Optical microscopy (OM) and by electrical conductivity measurements. The result showed that electrical conductivity of GNs was significantly improved, from $4.2{\times}10^{-4}$ S/m for GO to 12 S/m for GNs, possibly due to the removal of oxygen-containing functional group during chemical reduction. In addition, the $NO_2$ gas sensing characteristics of GNs are also discussed.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.379-383
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• 1990

$YBa_2Cu_{3-x}Ni_xO_{7-{\delta}}$, with x = 0.05, 0.2, 0.4, 0.7 and 1.0 had been prepared by the thermal decomposition of corresponding nitrates. Among them, the sample with x = 0.05 shows above-liquid-$N_2$ temperature superconductivity with $T_c$ of 88.7K. According to the X-ray diffraction analysis, its crystal symmetry was estimated as orthorhombic with the lattice parameters of a = 3.866${\AA}$, b = 3.893${\AA}$, c = 11.715${\AA}$. The chemical composition of the sample was determined by electron probe microanalysis and the chemical composition around its grain boundaries was carefully studied by the X-ray line scanning technique. From the observed binding energy of Ni-$2p_{3/2}$ orbital electron (B.E. = 853 eV) measured by X-ray photoelectron spectroscopy, the valency state of nickel stabilized in $YBa_2Cu_{2.95}Ni_{0.05}O_{7-{\delta}}$ oxide lattice could be determined to be Ni(II).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.323-323
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• 2008

• Bulletin of the Korean Chemical Society
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• 제31권6호
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• pp.1776-1778
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• 2010

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.22.2-22.2
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• 2006

• Journal of Radiation Protection and Research
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• 제45권1호
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• pp.11-15
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• 2020

Background: There have been various studies to investigate the mechanisms of DNA damage from low-energy electrons. To understand the mechanism of these strand breaks, it is necessary to investigate the dissociation mechanism of the DNA constituents, that is, bases, sugars, and phosphates. Materials and Methods: We studied the dissociation of thymine base upon interaction with low-energy electrons. For this experiment, thymine powder was pressed onto the indium base and irradiated by 5 eV electrons. Results and Discussion: Non-irradiated and irradiated thymine samples were compared and analyzed using the X-ray photoelectron spectroscopic technique to analyze the dissociation patterns of the molecular bonds after low-energy electron irradiation of thymine. Conclusion: With 5 eV electron irradiation, C-C and N-C = O bonds are the primary dissociations that occur in thymine molecules.