• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2056-2062
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• 2013

The dihydroxy naphthalene/$TiO_2$ complexes with different substitution patterns were prepared by surface modification. X-ray diffraction, UV-Vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared composite materials. The results indicated that the surface modification did not influence the crystallization of $TiO_2$. The visible-light absorbances of prepared dihydroxy naphthalene/$TiO_2$ complexes could be assigned to the ligand-to-metal charge transfer. The obtained catalyst exhibited outstanding photocatalytic activity and stability under visible light. A linear relationship existed between the percentages of hydroxynaphthalenes coordinated on $TiO_2$ surface and $H_2$ production ability. The substitution pattern of dihydroxy naphthalene and $CH_3OH$ content could also influence the photocatalytic performance remarkably. The photocatalytic $H_2$ production ability was further improved after loading with ultra low concentration of Pt, 0.02 wt %. The possible mechanism was proposed.

• Journal of electromagnetic engineering and science
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• v.16 no.3
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• pp.150-158
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• 2016

This paper reports on a study of LiNiZn-ferrite composite as a radiation absorbent material (RAM). The electromagnetic (EM) wave absorbers are composed of an EM wave absorbing material and a polymeric binder. The surface morphology, chemical composition, weight percent of the ferrite composite of the toroid sample, magnetic properties, and return loss are investigated using field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), vibrating sample magnetometer (VSM), and network analyzer. For preparing the absorbing sheet, chlorinated polyethylene (CPE) is used as a polymeric binder. The EM wave absorption properties of the prepared samples were studied at 4 - 8 GHz. We can confirm the effects of the thickness of the samples for absorption properties. An absorption bandwidth of more than a 10-dB return loss shifts toward a lower frequency range along with an increase in the thickness of the absorber.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.49-49
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• 2009

Nanocomposites of gold nanoparticles and multi-walled carbon nanotubes (MWNTs) were prepared by electrostatic interaction. Gold nanopartic1es were stabilized by polyvinylpyrrolidone (PVP), sodium dodecyl sulfate (SDS) and poly(sodium-4-styrenesulfonate) (PSS) in aqueous medium, and MWNTs were modified by poly(diallyldimethylammonium)chloride (PDDA) in water. The as-perpared Au-MWNT nanocomposites were structurally and electrically characterized by transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV/Vis spectroscopy, X-ray photoelectron spectroscopy (XPS) and cyclo voltammetry (CV). UV/Vis spectra of Au-MWNT nanocomposites showed the characteristic surface plasmon bands in the range of ~515nm, depending on the stabilizers. There is only slight change on the band shape with variation of stabilizing agents for gold nanoparticles. Through FE-SEM and TEM images, the distribution of gold, nanoparticles on the sidewalls of MWNTs was deliberately investigated on Au-MWNT nanocomposites treated with different stabilizers. XPS and CV showed redistribution of electron densities and changes in the binding energy states of nanopartic1es in nanocomposite respectively.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.307-317
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• 1994

The surf ace microstructure modification by $N^+$ ion implantation into 7050Al alloy and its low cycle fatigue behavior were investigated. Ion implantation method is to physically implant accelerated ions to the surface of a substrate. High dose of nitrogen($5{\times}10^{17}ions/cm^2$) were implanted into 7050Al alloy using current density of accellerating voltage of 100KeV. The implanted layers were characterized by Electron Probe-Micro Analysis(EPMA), Auger Elecron Spectroscopy(AES), X-Ray Diffraction(XRD), X-Ray Photoelectron Spectroscopy(XPS), and Transmission Electron Microscopy(TEM). The experimental results were compared with computer simulation data. It was shown that AlN was formed to 4500 ${\AA}$ deep. The low cycle fatigue life of the $N^4$ion modified material was prolonged by about three times the unimplanted one. The improved low cycle fatigue life was attributed to the formation of AlN and the damaged region on the surface by $N^+$ ion implantation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.27-30
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• 2013

Catalyst-free graphene nano-sheets without substrates have been synthesized using fullerene and a high direct current (dc) pulse in the spark plasma sintering (SPS) process. Graphene nano-sheets were synthesized directly in the gas phase of carbon atoms which are generated from fullerene at a temperature of $600^{\circ}C$. Characterization has been carried out by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.375-378
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• 2002

We investigated the reduction of etching damage by additive O$_2$ in etching gas and recovery of etching damage by O$_2$ annealing. The PZT thin films were etched using additive Ar or O$_2$ into Cl$_2$/CF$_4$ gas mixing ratio of 8/2. In order to recover ferroelectric properties of PZT thin films after etching, the etched PZT thin films were annealed at 600 C in O$_2$ atmosphere for 10 min. The remanent polarization is decreased seriously and fatigue is accelerated in the PZT sample etched in Ar/(C1$_2$+CF$_4$) plasma, whereas these characteristics are improved in O$_2$/(Cl$_2$/CF$_4$). From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Pb-O, Zr-O and Ti-O peaks are changed and the etch byproducts such as metal chloride and metal fluoride are reduced by O$_2$ annealing. From electron probe micro analyzer (EPMA) and auger electron spectroscopy(AES), O$_2$ vacancy is observed after etching. In x-ray diffraction (XRD), the structure damage in the additive O$_2$ into C1$_2$/CF$_4$ is reduced and the improvement of ferroelectric behavioral annealed sample is consistent with the increase of the (100) and (200) PZT peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.167.2-167.2
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• 2014

In this work, ZnO shell on mesoporous $SiO_2$ ($ZnO/SiO_2$) was prepared by atomic layer deposition (ALD). Diethylzinc (DEZ) and $H_2O$ were used as precursor of ZnO shell. $ZnO/SiO_2$ sample was characterized by X-ray diffraction (XRD), N2 sorption isotherms, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FT-IR). $ZnO/SiO_2$ showed higher adsorption capacity of MB than that of bare mesoporous $SiO_2$ and the adsorption capacities of $ZnO/SiO_2$ could be regenerated by UV exposure through the photocatalytic degradation of the adsorbed MB. This system could be used for removing organic dye from water by adsorption and reused after saturation of adsorption due to its photocatalytic regeneration.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.251-251
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• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.